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Method for preparing graphene nanoribbon

A technology of graphene nanoribbons and epitaxy, applied in the direction of graphene, nanocarbon, chemical instruments and methods, etc., can solve the problems of unfavorable device technology of graphene nanoribbons

Inactive Publication Date: 2017-05-10
BEIJING HUAJINCHUANGWEI ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In view of the problems existing in the prior art, the object of the present invention is to provide a method for preparing graphene nanobelts, which can control the growth of graphene nanobelts on the steps, which solves the problem that the graphene nanobelts grown on the side are not conducive to the later stage. The problem of device technology

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  • Method for preparing graphene nanoribbon
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  • Method for preparing graphene nanoribbon

Examples

Experimental program
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Effect test

Embodiment 1

[0038] A graphene nanoribbon with a width of 200nm is prepared with a silicon carbide substrate, and the specific method is as follows:

[0039] First, polish the silicon carbide substrate; then perform chemical cleaning: the first step, immerse SiC in a mixture of ammonia: hydrogen peroxide: deionized water at a ratio of 1:2:5, boil for 10 minutes, and clean with deionized water for 3 times; the second step, immerse the substrate in hydrochloric acid: hydrogen peroxide: deionized water = 1:2:8, boil for 5 minutes, and wash with deionized water for 3 times; the third step, put it in 3% HF solution for 1 minute, and wash it with deionized water Rinse with water.

[0040] Then carry out hydrogen etching: hydrogen etching off angle is 2°, temperature is 1500°C, H 2 The flow rate is 80L / min, the pressure is 120mbar, and the time is 5min.

[0041] Then remove the oxide: place the substrate in a high-temperature furnace, the temperature in the high-temperature furnace is 1100 ° C,...

Embodiment 2

[0044] A graphene nanoribbon with a width of 80 nm is prepared with a silicon carbide substrate, and the specific method is as follows:

[0045] First, polish the silicon carbide substrate; then perform chemical cleaning: the first step, immerse the SiC in a mixture of ammonia water: hydrogen peroxide: deionized water at a ratio of 2:3:5, boil for 5 minutes, and clean with deionized water for 3 times; the second step, immerse the substrate in hydrochloric acid: hydrogen peroxide: deionized water = 1:3:8, boil for 10 minutes, and wash with deionized water for 3 times; the third step, put it in 10% HF solution for 5 minutes, use deionized Rinse with water.

[0046] Then carry out hydrogen etching: the off angle of hydrogen etching is 4°, the temperature is 1300°C, H 2 The flow rate is 50L / min, the pressure is 100mbar, and the time is 5min.

[0047] Then remove the oxide: place the substrate in a high-temperature furnace, the temperature in the high-temperature furnace is 900 °...

Embodiment 3

[0050] The graphene nanobelts with a width of 30nm are prepared on a silicon carbide substrate, and the specific method is as follows:

[0051] First, polish the silicon carbide substrate; then perform chemical cleaning: the first step, immerse the SiC in a mixture of ammonia: hydrogen peroxide: deionized water at a ratio of 2:4:5, boil for 10 minutes, and clean with deionized water for 4 times; the second step, immerse the substrate in hydrochloric acid: hydrogen peroxide: deionized water = 1:5:8, boil for 5 minutes, and wash with deionized water for 3 times; the third step, put it in 15% HF solution for 10 minutes, use deionized water Rinse with water.

[0052] Then carry out hydrogen etching: hydrogen etching off angle is 8°, temperature is 1800°C, H 2 The flow rate is 100L / min, the pressure is 120mbar, and the time is 30min.

[0053] Then remove the oxide: put the substrate in a high-temperature furnace, the temperature in the high-temperature furnace is 1300 ° C, H 2 T...

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Abstract

The invention discloses a method for preparing a graphene nanoribbon. The method comprises the following steps: (1) preparing a monoatomic layer step on a silicon carbide substrate: firstly, polishing a silicon carbide substrate sheet, and then pretreating the substrate sheet until the silicon carbide substrate with the periodic monoatomic layer step is obtained, wherein the pretreatment comprises chemical cleaning, hydrogen etching and oxide removal; (2) directly growing the graphene nanoribbon on the silicon carbide substrate with the monoatomic layer step, which is obtained in the step (1), through a silicon carbide epitaxial method. According to the method disclosed by the invention, by the use of the characteristics that silicon carbide has an atomic step and a flat cleavage surface, graphene is grown directly through the silicon carbide epitaxial method; by adjustment of conditions such as temperature and pressure intensity, the graphene can grow on the step into the graphene nanoribbon with an adjustable size; the requirement on equipment is low, and the prepared GNRs (Graphene NanoRibbons) contain less defects, are controllable in size, and do not need stripping; the problem that the graphene nanoribbon growing on a side surface is unfavorable for later device processing is successfully solved.

Description

technical field [0001] The invention relates to the field of low-dimensional materials and new materials, in particular to a method for preparing graphene nanobelts. Background technique [0002] The unique properties of graphene include: the thinnest, strongest, high thermal conductivity, high hardness, high electron mobility, zero effective mass, high thermal conductivity, etc. It has huge potential in the fields of next-generation optoelectronic devices, transparent conductive films, sensors, etc. application potential. Especially its electron mobility exceeds 15000cm at room temperature 2 / Vs is expected to replace silicon to develop a new generation of electronic components or optoelectronic devices that are thinner and conduct electricity faster. Graphene nanoribbons (GNRs), as a structure of graphene, inherit many excellent properties of graphene, while breaking the translational symmetry of graphene, and have a certain band gap due to the quantum confinement effect...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B32/188
CPCC01B2204/32C01P2002/82C01P2004/04
Inventor 刘欣宇袁振洲李百泉
Owner BEIJING HUAJINCHUANGWEI ELECTRONICS CO LTD
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