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Preparation method of large-area graphene on SiC substrate based on Ni film annealing

A graphene and large-area technology, applied in the field of microelectronics, can solve the problems of unstable carrier mobility, small graphene area, uneven layer number, etc., and achieve less defects, low porosity, and good continuity Effect

Inactive Publication Date: 2013-07-03
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0019] The purpose of the present invention is to address the deficiencies in the above-mentioned prior art, and propose a method for preparing large-area graphene on a SiC substrate based on Ni film annealing, which mainly solves the problem that the graphene prepared by the prior art has a small area and is not suitable for mass production. The problem of uneven number, many defects, and unstable carrier mobility

Method used

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  • Preparation method of large-area graphene on SiC substrate based on Ni film annealing
  • Preparation method of large-area graphene on SiC substrate based on Ni film annealing

Examples

Experimental program
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Effect test

Embodiment 1

[0037] Example 1, using 6H-SiC as a substrate to grow graphene material.

[0038] Step 1: Clean the 6H-SiC substrate with a mixed solution of ammonia water and hydrogen peroxide, and a mixed solution of hydrochloric acid and hydrogen peroxide in sequence.

[0039] (1.1) According to NH 4 OH:H 2 o 2 :H 2 Prepare a solution at a ratio of O=1:2:5, place the 6H-SiC substrate in the solution, soak for 10 minutes, rinse with deionized water repeatedly and then dry to remove organic residues on the surface of the sample;

[0040] (1.2) According to HCl: H 2 o 2 :H 2 The solution was prepared at a ratio of O=1:2:8, and the 6H-SiC substrate after removing the surface organic residues was placed in the solution, soaked for 10 minutes, rinsed repeatedly with deionized water and then dried to remove ionic pollutants .

[0041] The second step: performing hydrogen etching treatment on the cleaned 6H-SiC substrate, and removing the formed Si compound.

[0042] (2.1) Put the cleaned...

Embodiment 2

[0051] Example 2, using 4H-SiC as a substrate to grow graphene materials:

[0052] Step 1: Clean the 4H-SiC substrate with a mixed solution of ammonia water and hydrogen peroxide, and a mixed solution of hydrochloric acid and hydrogen peroxide in sequence.

[0053] This step is the same as the first step in Example 1.

[0054] Step 2: perform hydrogen etching on the cleaned 4H-SiC substrate, and remove the formed Si compound.

[0055] (2.1) Put the cleaned 4H-SiC substrate into the graphene growth equipment, turn on the heating power, heat the reaction chamber to 1600°C, open the vent valve, and let in H2 with a flow rate of 80L / min. 2 , perform 30min hydrogen etching on the 4H-SiC substrate to remove scratches and defects on the surface of the 4H-SiC substrate;

[0056] (2.2) After hydrogen etching is completed, adjust the heating power supply voltage, cool down to 1000°C, and pass in hydrogen with a flow rate of 3L / min for 15 minutes; then cool down to 850°C, and pass in S...

Embodiment 3

[0064] Example 3, using 4H-SiC as a substrate to grow graphene material.

[0065] Step A: cleaning the 4H-SiC substrate with a mixed solution of ammonia water and hydrogen peroxide, and a mixed solution of hydrochloric acid and hydrogen peroxide in sequence.

[0066] This step is the same as the first step in Example 1.

[0067] Step B: carry out the hydrogen etching process first: put the cleaned 4H-SiC substrate into the graphene growth equipment, turn on the heating power supply, heat the reaction chamber to 1600°C, open the ventilation valve, and feed the gas with a flow rate of 100L / min h 2 , perform 60min hydrogen etching on the 4H-SiC substrate to remove scratches and defects on the surface of the 4H-SiC substrate;

[0068] Then remove the compound produced by hydrogen etching: after the hydrogen etching is completed, adjust the heating power supply voltage, lower the temperature to 1000°C, and pass in hydrogen at a flow rate of 4L / min for 15 minutes; then cool down t...

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Abstract

The invention discloses a preparation method of large-area graphene on an SiC substrate based on Ni film annealing and mainly solves the problems of poor continuity, unsmooth surface and non-uniform layers of graphene prepared in the prior art. The preparation method comprises the following realization steps: firstly, cleaning the SiC substrate by using mixed solution of ammonia water and hydrogen peroxide and mixed solution of hydrochloric acid and hydrogen peroxide; then carrying out hydrogen etching on the cleaned SiC substrate and removing a generated Si compound; putting the cleaned SiC substrate into reaction equipment, so that SiC reacts with gaseous CCl4 at the temperature of 750-1,150 DEG C to generate a carbon film; then electron beam-depositing an Ni film on the carbon film, putting a sample sheet plated with the Ni film into Ar gas with the temperature of 900-1,200 DEG C and annealing for 10-20 minutes to generate the graphene; and finally removing the Ni film from a graphene sample sheet by using mixed solution of hydrochloric acid and copper sulfate. The graphene prepared by the method has the advantages of large area, good continuity, smooth surface and low porosity and can be produced in a large scale.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and relates to a semiconductor material and a preparation method thereof, in particular to a method for preparing large-area graphene on a SiC substrate based on Ni film annealing. technical background [0002] Graphene is a new carbonaceous material formed by dense packing of carbon atoms into a honeycomb lattice structure. 2 Hybrid carbon, that is, the basic structural unit of carbon connected by double bonds or other atoms, has some special physical properties, including: unique carrier characteristics; electrons transport in graphene with little resistance and move at sub-micron distances There is no scattering at the time, and it has good electron transport properties; good mechanical properties and good toughness, and the maximum pressure per 100nm distance can reach 2.9N; the unique energy band structure of graphene separates holes and electrons from each other, resulting in new e...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B41/50C04B41/85C01B31/04C01B32/184
Inventor 郭辉张晨旭张玉明韦超雷天民
Owner XIDIAN UNIV
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