Preparation method of epitaxially-growing silicon carbide-graphene film

A graphene film, epitaxial growth technology, applied in chemical instruments and methods, crystal growth, single crystal growth and other directions, can solve problems such as lattice defects on the surface of SiC substrates, deposition of silicon compounds, reduction of silicon enrichment on the surface of SiC, etc. Achieve the effect of reducing lattice defects and serious reduction of surface silicon enrichment, and good crystal quality

Inactive Publication Date: 2017-02-22
SHAANXI JUJIEHAN CHEM CO LTD
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  • Summary
  • Abstract
  • Description
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  • Application Information

AI Technical Summary

Problems solved by technology

However, improper hydrogen etching will cause lattice defects on the surface of the SiC substrate, and will cause the deposition of silicon compounds, which will excessively reduce the enrichment of silicon on the SiC surface.

Method used

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Experimental program
Comparison scheme
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Embodiment Construction

[0017] The preparation method of epitaxial growth silicon carbide-graphene film, comprises the steps:

[0018] (1) Preparation of silicon carbide-graphene

[0019] Carry out cleaning pretreatment on the silicon carbide substrate. After the cleaning is completed, directly put the SiC substrate silicon side up and put it into the equipment to prepare for epitaxial growth.

[0020] (2) Epitaxial growth of silicon carbide-graphene film

[0021] The first step is to carry out the homoepitaxial growth of 4H-SiC first: reduce the vacuum degree of the chamber to 8×10 -4 Below Pa, continuously feed 7L / min of H 2 , gradually increase the chamber temperature from room temperature to 1600°C; keep at 1600°C for 10min as a pre-growth stage, and then feed 9~15mL / min of SiH 4 and 2~6mL / min of C 3 h 8 After growing for 60 minutes, the scratches and defects on the surface of the substrate were filled and covered to form a new SiC surface with excellent performance; finally, the temperature...

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Abstract

The invention relates to the technical field of function materials, in particular to a preparation method of an epitaxially-growing silicon carbide-graphene film. The preparation method of the epitaxially-growing silicon carbide-graphene film comprises steps as follows: (1) preparation of silicon carbide-graphene; (2) epitaxial growth of the silicon carbide-graphene film. Continuous growth of silicon carbide-graphene is realized, so that conventional common steps of hydrogen etching and silicon enrichment reproduction required for growing graphene on silicon carbide are omitted, the phenomena of lattice imperfection and severe reduction of surface silicon enrichment due to hydrogen etching are reduced, and graphene has fewer defects, has about four layers distributed uniformly and has better crystal quality.

Description

technical field [0001] The invention relates to the technical field of functional materials, in particular to a method for preparing an epitaxially grown silicon carbide-graphene film. Background technique [0002] Graphene is a carbon material that is tightly packed into a two-dimensional honeycomb structure by a single layer of carbon atoms. It has excellent mechanical, thermal, optical, electrical and chemical properties due to its unique crystal and electronic band structure. [0003] Such as ultra-high carrier mobility, ultra-large specific surface area, perfect quantum tunneling effect, half-integer quantum Hall effect, etc. In 2004, University of Manchester, UK A. K. Geim and K. S. After Novoselov discovered graphene for the first time, graphene quickly became an international frontier and hotspot in the fields of materials, physics, chemistry, semiconductors, microelectronics, biology, and new energy. Silicon carbide has a layered structure, and its basic consti...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B25/20C30B29/02C30B29/36C30B29/64C23C16/26C23C16/32
CPCC30B25/205C23C16/26C23C16/325C30B29/02C30B29/36C30B29/64
Inventor 李长英
Owner SHAANXI JUJIEHAN CHEM CO LTD
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