32results about How to "Achieve continuous growth" patented technology

The invention discloses a transparent electrode based on an ultra-thin metallic film. The transparent electrode orderly comprises a transparent substrate, a metal layer and a metal oxide layer from bottom to top, wherein the thickness of the metal layer is 3 to 12nm. The substrate is modified by a monomolecular self-assembled layer; an ultra-thin metal layer is directly deposited on the substrate, and the continuity and conductivity of the ultra-thin metallic film are improved through the function of the monomolecular self-assembled layer; or through the co-deposition of metals, the continuous growth of the ultra-thin metallic film is realized directly on the substrate; and a metal oxide layer is deposited on the substrate as an antireflection layer, then a double-layer film system structure is obtained, and through the design and optimization of the double-layer film system structure, the maximization of transmittance is realized. The invention further discloses a preparation method of the transparent electrode based on the ultra-thin metallic film and an application thereof in photoelectric devices, wherein the transparent electrode can have good conductivity and high transmittance at the same time.

The invention provides an active cooling device and method for laser repairing of a single crystal turbine blade. The device comprises an air compressor, a heat exchanger and an annular cooling device. The air compressor compresses air to be cooled into high-speed and high-pressure airflow, and the airflow is introduced into the heat exchanger. After the introduced airflow is cooled by the heat exchanger, the airflow is introduced into the annular cooling device. The annular cooling device is arranged above a workbench of a laser cladding system and arranged around a workpiece. According to the active cooling device and method for laser repairing of the single crystal turbine blade, the volume and temperature of the cooled airflow and the position and angle of a cooling nozzle are adjusted, so that the best active cooling effect is achieved in the laser repairing process.

The invention provides a split type crucible for crystal growth of silicon carbide. The crucible comprises the following components: a raw material chamber for containing raw materials for crystal growth of SiC; a growth chamber which is nested on the upper part of the raw material chamber in relative movement mode in order to form a crystallization area of crystal, wherein the growth chamber comprises a growth chamber, and a seed crystal holder which is arranged on a upper wall of the growth chamber; and a double layer structure which is formed by sidewalls of the growth chamber and comprises an inner cylinder and an outer cylinder. The crucible can be used for adjusting distance between the crystal surface and the raw material surface in a process of growth, and the stability of a temperature field is kept.

The invention relates to a microwave plasma chemical vapor deposition device, which comprises a casing, a microwave input port is arranged on the upper surface of the casing, a substrate is arranged below the microwave input port, a loop antenna is arranged on the bottom surface of the substrate, and the connection between the substrate and the casing is A tubular microwave window made of microwave dielectric material is arranged in between, and a deposition platform is provided at the bottom of the shell, which is located below the loop antenna, and the deposition platform can move up and down driven by the first lifting device, and the deposition platform A plasma stabilizing ring with a tubular structure is arranged on the outer surface, and a closed resonant cavity is formed surrounded by the deposition table, the plasma stabilizing ring, the shell, the tubular microwave window and the substrate. The microwave plasma chemical vapor deposition device of the invention has the advantages of simple structure, low processing cost, high production efficiency and high quality of finished products. In addition, the present invention also designs the production method of the microwave plasma chemical vapor deposition device.

The invention provides a tool provided with a diamond/silicon carbide composite coating. The tool provided with the diamond/silicon carbide composite coating comprises a base body, and a multi-layer coating structure, wherein the multi-layer coating structure is arranged on the base body. The multi-layer coating structure comprises the silicon carbide/diamond composite coating and a diamond coating. The silicon carbide/diamond composite coating and the diamond coating are sequentially and alternately arranged upwards from the surface of the base body to form the multi-layer coating structure; and the diamond coating is arranged on the top layer of the multi-layer coating structure. Each layer of the multi-layer coating structure can achieve continuous growth of the diamond phase, and accordingly the interface bonding strength between the layers is strengthened, the internal stress of the coatings can be reduced effectively, the adhesion between a thin film and the base body can be strengthened, and particularly the multi-layer coating structure is beneficial for resisting the strong shear stress generated in the cutting process of the tool. In addition, the overall fracture toughness in the thickness direction of the coatings can be strengthened. The invention also provides a production method of the tool provided with the diamond coating.

The invention belongs to the related technical field of additive manufacturing, and discloses a 3D printing device and method for an oriented crystal or single crystal high-temperature alloy and a product. The device comprises a forming unit, a shape righting light path unit and a forced temperature difference unit; a DOE diffraction optical element is arranged in the shape righting light path unit, and the shape righting light path unit is used for converting laser spot energy generated by a laser emitting element into uniform distribution from Gaussian distribution; the forced temperature difference unit is arranged in the forming cavity and comprises an infrared heating pipe and a cooling pipeline, heating is conducted above a cooling substrate through the infrared heating pipe, cooling is conducted in the cooling substrate through the cooling pipeline, thus an environment temperature field with the temperature strictly and gradually reduced is formed above the cooling substrate, and then crystals grow in the opposite direction of gradually-reduced temperature when a molten pool is solidified. By means of the device and the method, the temperature gradient in the molten pool can be controlled from top to bottom strictly, mixed crystals such as isometric crystals and the like are reduced or even eliminated, and layer-by-layer stable epitaxial growth of oriented crystals or single crystals along [001] is achieved.

The invention relates to a growth device and a growth method for a sapphire crystal hemisphere cover by employing an edge-defined film-fed crystal growth method. The method specifically comprises the following main steps: respectively introducing a protective gas and a cooling gas into a crystal growth furnace and a cooler pan; heating the crystal growth furnace until a high-purity aluminum oxide material is fused; adjusting a hoist pan, so that aluminum oxide melt ascends to the top end of a mold along a center through hole and an annular capillary fissure in the symmetric axis of the mold; descending seed crystal to fuse with the aluminum oxide melt; under the action of affinity and surface tension, enhancing radiation heat exchange between a growth interface and the gas cooler pan by adjusting the flow of the cooling gas in the cooler pan, so as to quicken the expansion of the crystal; and finally limiting the expansion of the crystal by the top edge of the mold. The growth device has the advantages that supply of the melt in the mold is adjusted by controlling the relative positions of the mold and the crucible; continuous providing of the melt in the capillary fissure is ensured, so as to realize continuous growth; and a hexagonal annular cooler pan is prevented from being carbonized to deform by employing the cooling gas.

The invention discloses a continuous growth device for a carbon nano-tube. The continuous growth device comprises a heating room, a substrate, a catalyst film and a heating device, wherein the heating room is provided with a heating chamber, and a vent hole communicated to the heating chamber is formed in the heating room; the substrate is located inside the heating chamber, the catalyst film is formed on the surface of the substrate, first through holes are formed in the substrate, and the catalyst film comprises second through holes communicated to the first through holes; and the heating device is used for heating the heating chamber. The plurality of holes in the porous substrate are communicated with the plurality of holes in the catalyst film located below the porous substrate, and reactant gas is introduced from the upper part of the porous substrate and can continuously flow into the plurality of holes in the catalyst film through the plurality of holes in the substrate, so that the carbon nano-tube can continuously grow. Preferably, the growth direction of the carbon nano-tube in an improved device is changed to be vertical and downward, therefore, compared with the growth speed of the carbon nano-tube which vertically and upwards grows, the growth speed is increased under the action of gravity, and furthermore, the technical effect of continuous and rapid growth is achieved.

The invention provides a preparation method of single-layer transition metal sulfide. The preparation method comprises the following steps: mixing transition metal sulfide and alkali metal halide, andheating the mixture at high temperature to obtain the single-layer transition metal sulfide. According to the method, the alkali metal halide is used for assisting growth, the alkali metal halide andthe transition metal sulfide are heated to form the eutectic body, the saturated vapor pressure of the transition metal sulfide is increased; and continuous growth of large-area single-layer transition metal sulfide and controllable growth of a single domain region can be achieved.

The invention discloses a tree model construction method and device, equipment and a storage medium, and belongs to the technical field of data analysis and processing. The method comprises the following steps: pre-processing alarm data to obtain a vectorized alarm association relationship set; performing normalization processing on the first feature of each alarm association relationship in the vectorized alarm association relationship set; according to the vectorized alarm association relationship set, the normalized first feature and a classification model obtained by training, determining a label of each alarm data in the set; and constructing a tree model according to the label of each alarm data in the set. In this way, the primary and secondary incidence relation between alarms can be expressed through the tree model, the alarm data are learned and analyzed based on the classification model obtained through training, the corresponding tree model is dynamically generated, and therefore continuous growth of the tree is achieved.

The invention provides a preparation method of a germanium and tin nano material under normal pressure, and belongs to the technical field of semiconductor nano materials. The preparation method comprises the following steps that S1, a silicon wafer is taken, and a metal catalyst is sprayed to the surface of the silicon wafer to achieve treatment; and S2, the silicon wafer treated in the step S1 is flatly placed at one end in a round-bottom porcelain boat, the face, with the metal catalyst sprayed, of the silicon wafer is upward, germanium powder and tin powder with the mass ratio being (20-10):1 are put at the other end in the round-bottom porcelain boat, the round-bottom porcelain boat is placed in a heating cavity of a tube furnace, inert gas is continuously introduced into the end withthe germanium powder and the tin powder with the gas flow being 200 sc.cm, after the temperature of the tube furnace is increased to 800-850 DEG C from the room temperature with the rate of 5 DEG C/min, heat preservation is carried out for 50 min to 110 min, then the temperature is reduced to the room temperature with the rate of 5 DEG C/min, and the germanium and tin nano material is obtained onthe surface of the silicon wafer. By means of the preparation method, the germanium and tin nano material can be rapidly and directly prepared, no waste gas treatment is needed in the whole preparation process, continuous production can be achieved, equipment is simple, and operation is easy.