32results about How to "Achieve continuous growth" patented technology

The invention discloses a method for directly preparing ITO nanowires by using an organic macromolecular material as a catalyst. The method first adopts a self-assembly method to deposit a single layer of polystyrene beads on a substrate, and then utilizes an electron beam evaporation method to deposit Polystyrene pellets were used as catalysts for the preparation of ITO nanowires, and then the polystyrene was removed by chloroform cleaning or annealing, so as to obtain needle-like ITO nanowires with uniform distribution over a large area. The present invention uses organic macromolecular materials as catalysts to prepare ITO nanowires, and has the characteristics of cheap (low cost), low temperature (280-320° C.), simple operation steps, and easy preparation of required materials. The prepared ITO nanowires The length can reach the order of microns, the end is needle-shaped, good thermal stability, good electrical conductivity and light transmission performance, and has strong application value in field emission displays, nanosensors, LED light-emitting devices and solar cells.

The invention discloses a transparent electrode based on an ultra-thin metallic film. The transparent electrode orderly comprises a transparent substrate, a metal layer and a metal oxide layer from bottom to top, wherein the thickness of the metal layer is 3 to 12nm. The substrate is modified by a monomolecular self-assembled layer; an ultra-thin metal layer is directly deposited on the substrate, and the continuity and conductivity of the ultra-thin metallic film are improved through the function of the monomolecular self-assembled layer; or through the co-deposition of metals, the continuous growth of the ultra-thin metallic film is realized directly on the substrate; and a metal oxide layer is deposited on the substrate as an antireflection layer, then a double-layer film system structure is obtained, and through the design and optimization of the double-layer film system structure, the maximization of transmittance is realized. The invention further discloses a preparation method of the transparent electrode based on the ultra-thin metallic film and an application thereof in photoelectric devices, wherein the transparent electrode can have good conductivity and high transmittance at the same time.

The invention discloses an electrochemical metal 3D printing method for processing a tandem variable-diameter metal pillar structure, which belongs to the fields of metal 3D printing technology and electrochemical manufacturing technology. The electrolyte is extruded from the nozzle and contacts the cathode substrate to form a meniscus, which is divided into three parts: inverted cone, cylinder and cone; by adjusting the distance between the printing nozzle and the cathode substrate, the deposition layer is located on the Different parts of the meniscus; when the sedimentary layer is located in the conical, cylindrical and inverted conical shape of the meniscus, the sedimentary layer will be deposited along the shape of the liquid-gas interface of the meniscus to form a corresponding inverted conical metal Columns, cylindrical metal columns and tapered metal columns. When processing a tandem variable-diameter metal pillar structure, the electrochemical reaction first deposits cone pillars on the cathode substrate, followed by deposition of inverted cone pillars with a large diameter change gradient, and then alternately deposits tapered pillars-inverted cone pillars until processing Finish. The invention has the advantages of easy operation, low cost, good controllability and the like.

The invention belongs to the technical field of luminescent quantum dot materials and particularly relates to a preparation method of a large-size core-shell structured quantum dot. The preparation method comprises steps as follows: a dispersion liquid of a shell source is added to a dispersion liquid of a core in a mode of dropwise adding at intervals in a protective atmosphere, and the core-shell structured quantum dot is obtained through in-situ growth. With the adoption of the mode of dropwise adding at intervals, matching from the inner layer of shell components to crystal lattices of themiddle layer is realized, influence of lattice imperfection on quantum yield is avoided, continuous growth of the shell is realized, and the core-shell structured quantum dot with large size and highyield is obtained finally. A result of an embodiment indicates that when the core-shell structured quantum dot with grain size being 15 nm is prepared with the method, the yield is as high as 80%; when the core-shell structured quantum dot with the grain size being 60 nm is prepared, the yield still keeps 50% or higher.