Preparation method of zinc oxide nanorod array thin film

Abstract

The invention belongs to the technical field of semiconductor film preparation, and particularly relates to a preparation method of a zinc-oxide nanorod array film. The technical scheme adopted by the invention is as follows: the preparation method comprises the following steps of: (1) on the basis of adopting height (001)-oriented ZnO as a seed layer, putting the ZnO seed layer into an aqueous solution of zinc nitrate (Zn(NO3)2), polyethyleneimine (PEI) and hexamethylenetetramine (HMT) for epitaxial growth to obtain a (001) preferred-orientation ultralong ZnO nanorod array film; (2) carrying out fast annealing treatment on the film, and improving the photoluminescence performance of the ZnO array film. The technology has the advantages that the continuous growth of the ZnO nanorod at the temperature higher than 100 DEG C can be realized; due to the high-temperature growth condition, the crystallization quality of the nanorod is improved, the internal defects are obviously reduced; the zinc-oxide nanorod array film has excellent photoelectric performance, and is more conductive to being applied in photoelectric devices such as dye-sensitized solar batteries, ultraviolet detectors, field-effect transistors, light-emitting diodes and nanogenerators.

Description

technical field [0001] The invention belongs to the technical field of semiconductor film preparation, and in particular relates to a preparation method of a zinc oxide nanorod array film. Background technique [0002] Zinc oxide is a wide bandgap (3.37eV) semiconductor material with good photoelectric, piezoelectric, catalytic and other properties. In recent years, with the development of nanotechnology, scientists have discovered that the one-dimensional ZnO array structure has good development prospects in the fields of sensors, light-emitting diodes, solar cells, and nanogenerators. Zinc oxide is one of the research hotspots at home and abroad. [0003] As a wide bandgap transparent semiconductor material, ZnO has an exciton binding energy as high as 60meV, and has excellent exciton recombination luminescence performance, and is suitable for the development of ultraviolet lasers. [0004] In the applicant's previous patent (a method for controlling the orientation and ...

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Problems solved by technology

[0004] In the applicant's previous patent (a method for controlling the orientation and morphology of zinc oxide nanorods and nanotube arrays, CN200810016893.3), a method for preparing ZnO nanorods / nanotubes by a liquid phase method was proposed, but water The thermal reaction temperature is below 100°C, grow for 2-12 hours to obtain a vertically grown ZnO nanorod array film, the length of ZnO nanorods does not exceed 10 μm, and the crystal quality is poor, making its photoluminescence performance at 500 There is an obvious defect emission peak in the -700nm range, and the intrinsic emission peak is relatively weak, which cannot meet the performance requirements of ZnO nanorod array thin film devices

[0005] At present, there are many reports on ultra-long ZnO nanorod array films. For example, L.Wen, et al. successfully prepared 180 μm ultra-long ZnO nanorod array films on silicon wafers by chemical vapor phase method at a high temperature of 950 ° C. (L.Wen, K.M.Wong, Y.Fang, M.Wu, Y.Lei.Fabrication and characterization of well-aligned, high density Zn Onano wire arrays and their realizations in Schottky devices applications using a two-step approach, J. Mater. Chem., 2011, 21, 7090-7097), DiGao et al. (82-87 degrees) The hydrothermal method successfully prepared a 30 μm ZnO nanorod array film, (C.XuandD.Gao.Two-StageHydrothermalGrowthofLongZnONanowiresforEfficientTiO2Nanotube-BasedDye-SensitizedSolarCells, J.Phys.Chem.C,2012,116(12): 7236–7241.), JijunQiu et al. used low-temperature hydrothermal method to prepare 40 μm high aspect ratio ultra-long ZnO nanorod array film, (J.Qiu, X.Li, W.He, S.J.Park, H.K.Kim, Y.H.Hwang, J.H.Lee, Y.D.Kim.ThegrowthmechanismandopticalpropertiesofultralongZnOnanorodarrayswithahighaspectratiobyapreheatinghydrothermalmethod,2009,20(15):155603.) However, in their work, they failed to obtain ZnO nanowire array films with high crystalline quality and high ultraviolet light emission, so they synthesized high crystalline quality and low ZnO nanorod array film with surface defects is of great significance for its application in optoelectronic devices

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