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36results about How to "Less precipitation" patented technology

Polyamide acid resin composition, polyimide film using same, and method for producing said polyimide film

The present invention addresses the problem of providing a polyamide acid resin composition which is able to be formed into a varnish that has a low viscosity, and which is capable of providing a coating film that exhibits excellent mechanical properties after being fired. The present invention also addresses the problem of providing a polyamide acid resin composition wherein a terminal acid anhydride group is less reacted with a diamine and less diamine is precipitated in a varnish. The problems can be solved by a polyamide acid resin composition which is characterized by containing (a) a polyamide acid and (b) a compound that is represented by chemical formula (1). (In chemical formula (1), Z represents a divalent or higher-valent organic group having 2 or more carbon atoms; V represents a structure that is represented by chemical formula (2); and k represents an integer of 2 or more.) (In chemical formula (2), delta represents an oxygen atom or a sulfur atom; W represents an electron-withdrawing group; and each of R11 and R12 independently represents a hydrogen atom or a hydrocarbon group having 1-10 carbon atoms.)
Owner:TORAY IND INC

Round integrated oxidation ditch

The invention discloses a round integrated oxidation ditch. The oxidation ditch is a continuous and enclosed concentric circle like reactor, two rings outside sequentially form an external ditch (10) and an intermediate ditch (8), the liquid surfaces of the external ditch (10) and the intermediate ditch (8) are provided with a stream pushing aeration machine (1), an intermediate ring forms a secondary sedimentation tank (9), the secondary sedimentation tank (9) is internally provided with a mud scraper (4), the circumference wall of the secondary sedimentation tank (9) is provided with a water inflow skirtboard (3), the inner wall of the intermediate ditch (8) is provided with a water distributing hole (5), a mud collecting well (7) is arranged outside the round ring, and the mud collecting well (7) is internally provided with a sludge pump (6). The water distributing hole (5) interval on the inner wall of the intermediate ditch (8) is 300-600mm. The diameter Phi of water distributing hole (5) is 20-30mm. An annular effluent weir is arranged between the inner wall of the intermediate ditch (8) and the secondary sedimentation tank (9). The invention has high aeration oxygenating efficiency, stable running and convenient operation and maintenance, occupying area is small, and flow is simplified and smooth.
Owner:绿地环保科技股份有限公司

Barrier layer based safe utilization method for cadmium-polluted farmlands

The invention relates to the technical field of remediation and safe utilization of farmlands polluted by heavy metal, and in particular to a barrier layer based safe utilization method for cadmium-polluted farmlands. The method includes adding a passivator D1 to a surface layer A1, plowing the surface layer and constructing a barrier layer A2; exchanging the barrier layer A2 with a deep layer B1 through deep plowing, plowing the barrier layer A2 to a position where root systems of bulk farm-products seldom contact, and plowing the original deep layer B1 as a plowing layer B2; fertilizing the plowing layer B2 to recover productivity, and adding a passivator D2. According to the characteristics of low background value of heavy metal, low precipitation, neutral or weakly-alkaline soil and the like in north, barrier layer construction is taken as a core, deep plowing and fertilizing are applied for assistance, and accordingly, passivated deep burying of high-cadmium-concentration soil layers is realized; a combined technology applicable to safe utilization of the cadmium-polluted farmlands in north is created, and the barrier layer based safe utilization method has the advantages of good effect, easiness in operation, easiness in popularization and the like.
Owner:SHENYANG INST OF APPL ECOLOGY CHINESE ACAD OF SCI

Preparation method of zinc oxide nanorod array thin film

InactiveCN103397382BImprove UV Luminescence PerformanceHigh UV Luminescence PerformancePolycrystalline material growthAfter-treatment detailsNanogeneratorHexamethylenetetramine
The invention belongs to the technical field of semiconductor film preparation, and particularly relates to a preparation method of a zinc-oxide nanorod array film. The technical scheme adopted by the invention is as follows: the preparation method comprises the following steps of: (1) on the basis of adopting height (001)-oriented ZnO as a seed layer, putting the ZnO seed layer into an aqueous solution of zinc nitrate (Zn(NO3)2), polyethyleneimine (PEI) and hexamethylenetetramine (HMT) for epitaxial growth to obtain a (001) preferred-orientation ultralong ZnO nanorod array film; (2) carrying out fast annealing treatment on the film, and improving the photoluminescence performance of the ZnO array film. The technology has the advantages that the continuous growth of the ZnO nanorod at the temperature higher than 100 DEG C can be realized; due to the high-temperature growth condition, the crystallization quality of the nanorod is improved, the internal defects are obviously reduced; the zinc-oxide nanorod array film has excellent photoelectric performance, and is more conductive to being applied in photoelectric devices such as dye-sensitized solar batteries, ultraviolet detectors, field-effect transistors, light-emitting diodes and nanogenerators.
Owner:UNIV OF JINAN
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