Split type crucible for crystal growth of silicon carbide

Abstract

The invention provides a split type crucible for crystal growth of silicon carbide. The crucible comprises the following components: a raw material chamber for containing raw materials for crystal growth of SiC; a growth chamber which is nested on the upper part of the raw material chamber in relative movement mode in order to form a crystallization area of crystal, wherein the growth chamber comprises a growth chamber, and a seed crystal holder which is arranged on a upper wall of the growth chamber; and a double layer structure which is formed by sidewalls of the growth chamber and comprises an inner cylinder and an outer cylinder. The crucible can be used for adjusting distance between the crystal surface and the raw material surface in a process of growth, and the stability of a temperature field is kept.

Description

technical field [0001] The invention belongs to the field of crystal growth, and relates to a crucible structure for growing SiC crystals by using a physical vapor transport method, in particular to a split-type silicon carbide crystal growth crucible. Background technique [0002] SiC crystal has a series of advantages such as large band gap, strong critical breakdown field, high saturation drift speed, low thermal expansion coefficient, and strong radiation resistance. It is a new generation of semiconductor materials that have attracted much attention. Substrate and other applications have broad application prospects. Especially in the past ten years, both SiC crystal materials and related device application research have made great progress, and SiC crystal devices have gradually entered power electronics, new energy vehicles, LED lighting and other industries. [0003] SiC crystal growth generally adopts the physical vapor transport method (physical vapor transport, PV...

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Problems solved by technology

[0005] However, a large number of experiments have found that in the early stage of crystal growth, due to the inevitable process of temperature rise and depressurization process control, there are certain problems of unstable temperature gradient and insufficient transport of gas phase components inside the crucible, which leads to sublimation damage of the seed crystal, and in the crystal growth introduces a large number of defects in

In addition, as the crystal growth process progresses, the crystal gradually thickens, and the distance between the crystal surface and the raw material surface shrinks, which also leads to changes in the temperature gradient inside the crucible, often causing polymorphic derivatives and other crystal defects.

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