Preparation method of silicon carbide epitaxial structure and semiconductor equipment

Abstract

The invention provides a preparation method of a silicon carbide epitaxial structure. The preparation method comprises the following steps: purifying a reaction chamber; growing a silicon carbide protection layer on the inner wall of the reaction chamber after purification treatment; putting a silicon carbide substrate into the reaction chamber, and performing in-situ etching on the silicon carbide substrate; growing a silicon carbide buffer layer on the etched silicon carbide substrate; growing an N-type silicon carbide epitaxial layer on the silicon carbide buffer layer; and growing a P-type silicon carbide epitaxial layer on the N-type silicon carbide epitaxial layer. The preparation method is simple, growth of epitaxial layers of different doping types can be completed in the same chamber, continuous growth of the epitaxial layers of different doping types is achieved, surface defects of a silicon carbide epitaxial structure are reduced, and the yield of silicon carbide devices is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor materials, in particular to a method for preparing a silicon carbide epitaxial structure and semiconductor equipment. Background technique [0002] Silicon carbide (SiC) semiconductor has excellent characteristics such as large bandgap width, excellent stability, high thermal conductivity, high critical breakdown field strength, high saturation electron drift velocity, etc. It is ideal for high temperature, high frequency, high power and strong radiation power Ideal semiconductor material for electronic devices. Compared with traditional silicon devices, silicon carbide devices can work normally under the electric field strength 10 times that of silicon devices. Due to these superior characteristics of silicon carbide, it has broad application prospects in the fields of chemical industry, aerospace engineering, nuclear power engineering, electronic components and electronic circuits. [00...

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Problems solved by technology

[0005] Aiming at the deficiencies and defects in the prior art, the present invention provides a method for preparing a silicon carbide epitaxial structure and semiconductor equipment, which are used to solve the influence of P-type dopants on the growth of N-type epitaxial layers in the silicon carbide epitaxial structure and surface defects The problem of device yield reduction caused by density

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