Microwave plasma chemical vapor deposition device and production method thereof

A technology of chemical vapor deposition and microwave plasma, which is applied in the direction of gaseous chemical plating, metal material coating process, coating, etc., can solve the problems of reducing production efficiency and increasing the probability of diamond surface contamination, and achieves high production efficiency and structure The effect of simplicity and low processing cost

Inactive Publication Date: 2017-10-03
无锡远稳烯科技有限公司
View PDF6 Cites 14 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Such repeated growth not only increases the probability of contamination on the diamond surface, but also reduces production efficiency

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Microwave plasma chemical vapor deposition device and production method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0021] The specific implementation manners of the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. The following examples are used to illustrate the present invention, but are not intended to limit the scope of the present invention.

[0022] see figure 1 , a microwave plasma chemical vapor deposition device according to a preferred embodiment of the present invention includes a housing 1, a microwave input port 2 is provided on the upper surface of the housing, a substrate 3 is provided below the microwave input port, and a substrate 3 is provided on the bottom surface of the substrate There is a loop antenna 4, and a tubular microwave window 5 made of microwave dielectric material is arranged between the base plate and the housing. Preferably, the tubular microwave window is made of quartz. The inner cavity of the tubular microwave window communicates with the microwave input port. In actual applicati...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to a microwave plasma chemical vapor deposition device, which comprises a casing, a microwave input port is arranged on the upper surface of the casing, a substrate is arranged below the microwave input port, a loop antenna is arranged on the bottom surface of the substrate, and the connection between the substrate and the casing is A tubular microwave window made of microwave dielectric material is arranged in between, and a deposition platform is provided at the bottom of the shell, which is located below the loop antenna, and the deposition platform can move up and down driven by the first lifting device, and the deposition platform A plasma stabilizing ring with a tubular structure is arranged on the outer surface, and a closed resonant cavity is formed surrounded by the deposition table, the plasma stabilizing ring, the shell, the tubular microwave window and the substrate. The microwave plasma chemical vapor deposition device of the invention has the advantages of simple structure, low processing cost, high production efficiency and high quality of finished products. In addition, the present invention also designs the production method of the microwave plasma chemical vapor deposition device.

Description

technical field [0001] The invention relates to a diamond production equipment, in particular to a microwave plasma chemical vapor deposition device, and furthermore, the invention also relates to a production method of the microwave plasma chemical vapor deposition device. Background technique [0002] Diamond, commonly known as diamond, is the mineral material with the highest hardness and high strength and wear resistance found in nature. At present, methods for artificially synthesizing diamond include high temperature and high pressure (HTHP), direct current arc plasma jet (DCAPJ), hot wire chemical vapor deposition (HFCVD), and microwave plasma chemical vapor deposition (MPCVD). The preferred method for high quality diamonds. This is because compared with other methods of generating plasma, microwave-excited plasma has a series of advantages such as no electrode material contamination, good controllability, and high plasma density. The core component of the diamond M...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/27C23C16/517C23C16/458
CPCC23C16/274C23C16/276C23C16/4583C23C16/517
Inventor 凌海林袁稳陈天鹏凌天杰
Owner 无锡远稳烯科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap