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A kind of two-dimensional transition metal chalcogenide film and its preparation method and application

A technology of transition metals and chalcogenides, applied in metal material coating process, gaseous chemical plating, coating, etc., can solve problems such as the inability to achieve continuous growth of single-layer two-dimensional semiconductor nano-films

Active Publication Date: 2018-02-02
THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] Aiming at the technical problem that the continuous growth of a large-area single-layer two-dimensional semiconductor nanofilm cannot be realized in the prior art, the present invention provides a two-dimensional transition metal chalcogenide film and its preparation method and application

Method used

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  • A kind of two-dimensional transition metal chalcogenide film and its preparation method and application
  • A kind of two-dimensional transition metal chalcogenide film and its preparation method and application
  • A kind of two-dimensional transition metal chalcogenide film and its preparation method and application

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Embodiment 1

[0067] One adopts chemical vapor deposition device to prepare single-layer or few-layer ZrS 2 , ZrSe 2 , HfS 2 or HfSe 2 The chemical vapor deposition device is a device known in the art, and the chemical vapor deposition device used in this embodiment includes a tubular heating furnace, a heating belt and a quartz tube, wherein the quartz tube is 1.4 m long and 1 inch in diameter, and There are vacuum valves at both ends of the quartz tube, which are used to evacuate the inside of the quartz tube and send protective gas; the quartz tube should be longer than the tubular heating furnace, so that a part of the quartz tube is located outside the tubular furnace to prevent ZrCl 4 / HfCl 4 and S / Se, guaranteed ZrCl 4 / HfCl 4 and S / Se are not affected by the temperature in the heating furnace; the heating furnace is provided with an independent thermocouple in the quartz tube, which is used to heat the corresponding position in the quartz tube; the heating band is composed of t...

Embodiment 2

[0077] A two-dimensional ZrSe prepared by chemical vapor deposition 2 The method, described chemical vapor deposition device is identical with embodiment 1, and the difference of described method and embodiment 1 is:

[0078] The sources described in step (2) are selenium and zirconium chloride, and the heating and volatilization temperatures are 230°C and 170°C respectively, zirconium chloride is placed upstream of the airflow, and selenium is placed downstream of zirconium chloride, as described in step (4). The protective gas is hydrogen only, and the result is two-dimensional zirconium selenide.

[0079] The ZrSe that this embodiment obtains 2 Atomic force microscope picture as Figure 9 shown.

Embodiment 3

[0081] A two-dimensional HfS prepared by chemical vapor deposition device 2 The method, described chemical vapor deposition device is identical with embodiment 1, and the difference of described method and embodiment 1 is:

[0082] The sources in step (2) are sulfur and hafnium chloride, and the heating and volatilization temperatures are 130° C. and 170° C. respectively. The hafnium chloride is placed upstream of the gas flow, and the sulfur is placed downstream of the zirconium chloride.

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Abstract

The invention relates to a two-dimensional transition metal chalcogenide film, a preparation method and application thereof. The two-dimensional transition metal chalcogenide refers to: ZrS2, ZrSe2, HfS2 and HfSe2; Monolayer or few-layer two-dimensional transition metal chalcogenides are deposited on boron substrates. The method provided by the invention can controllably synthesize a hexagonal or triangular two-dimensional transition metal chalcogenide film with a thickness of about 1 nm and a thickness of more than 1 μm on a boron nitride substrate, and realizes two-dimensional ZrS2, ZrSe2, HfS2 and controlled growth of large-area continuous thin films and monodomain regions of HfSe2.

Description

technical field [0001] The present invention relates to the technical field of semiconductor materials, in particular to a two-dimensional semiconductor nano film and its preparation method and application, in particular to a two-dimensional transition metal chalcogenide film with high mobility potential and its preparation method and application. Background technique [0002] Two-dimensional semiconductor nanofilms with atomic thickness, such as transition metal chalcogenides, have a certain band gap and high on-off ratio, and have great application prospects in nanoelectronic devices. However, practical applications require two-dimensional nanoscale thin film semiconductor materials with high mobility to meet the use of nanoelectronic devices in various environments. Moreover, the single-layer two-dimensional atomic crystal with high mobility plays an important role in promoting the fields of logic devices, spectral detection, and photoelectric conversion. [0003] Transi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/30C23C16/44
Inventor 张妹谢黎明
Owner THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
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