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A kind of method that utilizes organic macromolecule material as catalyst to prepare ito nanowire

A technology of organic macromolecules and nanowires, applied in the fields of nanotechnology, nanotechnology, nanotechnology, etc. for materials and surface science, it can solve the problems of poor morphology control quality, harsh control process, and high catalyst cost, and achieve good results. Light transmission performance, good performance stability, and the effect of reducing experimental costs

Active Publication Date: 2017-08-01
XI AN JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, it can be seen through analysis that the patent application No. 200610031534.6 still uses metal-gold as a catalyst to prepare ITO nanowires, which does not fundamentally solve the problem of high cost and difficult removal of the catalyst; while the patent application No. 200910024491.2 The patent application uses a method of electron beam evaporation to directly prepare ITO nanowires, which requires strict control of the equipment, and the length of the prepared ITO nanowires can only be at the nanometer level (~100nm), and the shape controls the quality. poor

Method used

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  • A kind of method that utilizes organic macromolecule material as catalyst to prepare ito nanowire
  • A kind of method that utilizes organic macromolecule material as catalyst to prepare ito nanowire
  • A kind of method that utilizes organic macromolecule material as catalyst to prepare ito nanowire

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Embodiment 1

[0036] see figure 1 Shown, a kind of method utilizing organic macromolecular material of the present invention to prepare ITO nanowire by catalysis comprises the following steps: a GaN epitaxial wafer with a diameter of 2 inches is put into acetone and ethanol (99.7%) solvent respectively and ultrasonically cleaned at room temperature 10 minutes, then rinsed with deionized water and blown dry with nitrogen. A single-layer polystyrene pellet with a diameter of 500 nm was self-assembled and deposited on a cleaned GaN epitaxial wafer. The deposition area covered the entire substrate. The surface of the sample was observed with a field emission scanning electron microscope (SEM), and the following results were obtained: figure 2 The results shown. Carry out ICP etching with oxygen afterwards 200 seconds, carry out SEM observation again, obtain as follows figure 2 In the results shown in the middle inset, it can be seen that the surface of the polystyrene spheres is modified an...

Embodiment 2

[0040]Complete the ITO evaporation of the GaN epitaxial wafer according to the steps in the implementation case 1, and then put it into the annealing furnace (rapid alloy furnace, model: RTP-3, heating rate 100°C / s, cooling rate 80°C / s) for annealing The temperature is 600°C, the flow rate of nitrogen gas is adjusted to 25ml / min, and annealing is carried out for 10 minutes. After cooling, the substrate is taken out and observed by a field emission scanning electron microscope. The following can be obtained: Figure 5 The results shown. It can be seen that the morphology of ITO nanowires remains the same after high-temperature annealing, and has good electrical conductivity and light transmission properties.

Embodiment 3

[0042] see figure 1 Shown, a kind of method utilizing organic macromolecular material of the present invention to prepare ITO nanowire by catalysis comprises the following steps: a GaN epitaxial wafer with a diameter of 2 inches is put into acetone and ethanol (99.7%) solvent respectively and ultrasonically cleaned at room temperature 10 minutes, then rinsed with deionized water and blown dry with nitrogen. A single-layer polystyrene sphere with a diameter of 500 nm is self-assembled and deposited on a cleaned GaN epitaxial wafer, and the deposition area covers the entire substrate. Afterwards, ICP etching was performed with oxygen for 200 seconds to modify the surface of the polystyrene beads, and to increase the distance between the beads.

[0043] Put the GaN epitaxial wafer with polystyrene balls attached on the sample holder of the electron beam evaporation equipment, and the side with polystyrene balls is facing the ITO target. After loading the ITO target (In:Sn=90:10...

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Abstract

The invention discloses a method for directly preparing ITO nanowires by using an organic macromolecular material as a catalyst. The method first adopts a self-assembly method to deposit a single layer of polystyrene beads on a substrate, and then utilizes an electron beam evaporation method to deposit Polystyrene pellets were used as catalysts for the preparation of ITO nanowires, and then the polystyrene was removed by chloroform cleaning or annealing, so as to obtain needle-like ITO nanowires with uniform distribution over a large area. The present invention uses organic macromolecular materials as catalysts to prepare ITO nanowires, and has the characteristics of cheap (low cost), low temperature (280-320° C.), simple operation steps, and easy preparation of required materials. The prepared ITO nanowires The length can reach the order of microns, the end is needle-shaped, good thermal stability, good electrical conductivity and light transmission performance, and has strong application value in field emission displays, nanosensors, LED light-emitting devices and solar cells.

Description

[0001] 【Technical field】 [0002] The invention belongs to the technical field of optoelectronic device materials, in particular to a method for preparing ITO (indium tin oxide) nanowires. [0003] 【Background technique】 [0004] ITO material has good chemical stability and thermal stability, and has good adhesion and pattern etching characteristics to the substrate. As a transparent conductive film, it has been maturely applied to LEDs with horizontal structures. Adding a layer of ITO material to the LED with a horizontal structure can make the current injected into the LED chip diffuse quickly and uniformly, increase the electronic activity, and achieve the purpose of improving the light conversion efficiency of the LED. The annealed ITO material has good electrical conductivity and oxidation resistance, and can be used as a cold cathode material for field emission. At the same time, ITO materials have very high gas-sensitivity characteristics to specific substances (such as...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C03C17/245C04B41/50B82Y30/00
Inventor 李强云峰李虞锋弓志娜郭茂峰
Owner XI AN JIAOTONG UNIV
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