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Preparation method of single-layer transition metal sulfide

A transition metal and alkali metal halide technology, applied in the fields of electronics and optoelectronics, can solve the problems of low vapor pressure, poor controllability, and inability to obtain continuous growth of transition metal sulfide nano-films, and achieve the effect of increasing the saturated vapor pressure.

Inactive Publication Date: 2019-12-24
THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] CN106757361A discloses a kind of growth MoS based on CVD method 2 The method of two-dimensional crystal mainly solves the problems of complex process and poor controllability of traditional methods
[0010] Since transition metal sulfides will decompose above 1000 degrees Celsius, and the vapor pressure of transition metal sulfides is low at low temperatures, it is impossible to obtain continuous growth of large-area single-layer transition metal sulfide nanofilms.

Method used

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  • Preparation method of single-layer transition metal sulfide
  • Preparation method of single-layer transition metal sulfide

Examples

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Embodiment 1

[0055] This embodiment provides a method for preparing a single-layer transition metal sulfide using a physical vapor deposition device. The physical vapor deposition device used is a commonly used device known in the art, specifically including: a tubular heating furnace and a quartz tube, wherein , the quartz tube is 1.4m long and 1 inch in diameter. Vacuum valves are arranged at both ends of the quartz tube for vacuuming the inside of the quartz tube and introducing protective gas. The quartz tube is longer than the tubular heating furnace, and the tubular heating furnace is provided with an independent thermocouple in the quartz tube for heating the corresponding position in the quartz tube.

[0056] Described preparation method specifically comprises the following steps:

[0057] (1) Take a piece of commercially available sapphire and cut it into small pieces of 2×1 cm; anneal at 800°C for 2 hours before use.

[0058] (2) Weigh 40mg of molybdenum disulfide powder and 5.0...

Embodiment 2

[0065] This embodiment provides a method for preparing a single-layer transition metal sulfide using a physical vapor deposition device. The physical vapor deposition device is the same as in Example 1. The difference between the preparation method and Example 1 is that the steps ( 2) The raw materials in 2) were replaced with 50mg of tungsten disulfide and 6.0g of sodium chloride.

[0066] The other steps are the same as in Example 1, and finally a single layer of tungsten disulfide is deposited on the sapphire substrate after high temperature heating.

[0067] The surface microstructure of tungsten disulfide was observed by optical microscope and atomic force microscope, image 3 It is an optical microscope picture of the prepared tungsten disulfide thin film, the scale bar in the figure is 50 μm, determined by image 3 It can be seen that the maximum size of tungsten disulfide single crystal exceeds 100 μm; Figure 4 For the atomic force microscope picture of the prepared...

Embodiment 3

[0069] This embodiment provides a method for preparing a single-layer transition metal sulfide using a physical vapor deposition device. The physical vapor deposition device is the same as in Example 1. The difference between the preparation method and Example 1 is that the steps ( 2) The raw materials in are replaced with 40mg of molybdenum diselenide and 6.0g of cesium chloride.

[0070] The surface microstructure of molybdenum diselenide was observed by optical microscope and atomic force microscope, Figure 5 For the optical microscope picture of the prepared molybdenum diselenide thin film, the scale bar in the figure is 50 μm, by Figure 5 It can be seen that the maximum size of molybdenum diselenide single crystal exceeds 100 μm; Figure 6 For the atomic force microscope picture of the prepared molybdenum diselenide thin film, the scale in the figure is 5 μm. It is well known in the art that: the thickness of a single-layer crystal is 0.7-1 nm; the thickness of a few-l...

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Abstract

The invention provides a preparation method of single-layer transition metal sulfide. The preparation method comprises the following steps: mixing transition metal sulfide and alkali metal halide, andheating the mixture at high temperature to obtain the single-layer transition metal sulfide. According to the method, the alkali metal halide is used for assisting growth, the alkali metal halide andthe transition metal sulfide are heated to form the eutectic body, the saturated vapor pressure of the transition metal sulfide is increased; and continuous growth of large-area single-layer transition metal sulfide and controllable growth of a single domain region can be achieved.

Description

technical field [0001] The invention belongs to the technical field of electronics and optoelectronics, and relates to a preparation method of a single-layer transition metal sulfide, in particular to a preparation method for realizing a large-area single-layer transition metal sulfide. Background technique [0002] A single-layer semiconductor material with an atomic layer thickness can overcome the narrow channel effect of field effect transistors and has lower power consumption, and is one of the candidate materials for future electronic devices. According to the unique performance advantages of single-layer materials, it can be widely used in field effect transistors, storage devices, oscillators, thermal radiation detectors, sensors, and flexible devices. Moreover, the single-layer atomic crystal with high mobility plays an important role in promoting the fields of logic devices, spectral detection, and photoelectric conversion. [0003] Two-dimensional transition meta...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/46C30B23/00
CPCC30B23/00C30B29/46
Inventor 谢黎明巩凡
Owner THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
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