CVD monocrystalline diamond growth pretreatment method

A single crystal diamond, pretreatment technology, applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve the problems of surface contamination of the seed crystal, influence of the quality and purity of single crystal diamond, etc., to improve the quality and purity, improve The effect of adhesion

Inactive Publication Date: 2019-03-29
西安碳星半导体科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] CVD is an important method for preparing single crystal diamond. In the process of growing single crystal diamond using CVD, the single crystal diamond seed crystal is directly placed in the microwave plasma chemical vapor deposition equipment for growth, although before CVD epitaxial growth of single crystal diamond , the seed crystal has been cleaned, but before the seed crystal is put into the growth chamber and before the reaction gas is passed into the growth chamber, the seed crystal will still be exposed to the air, which will cause the surface of the seed crystal to be affected to a certain extent. Contamination, which affects the quality and purity of the grown single crystal diamond

Method used

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  • CVD monocrystalline diamond growth pretreatment method

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Experimental program
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Effect test

Embodiment 1

[0027] Select an ultra-thin single-crystal diamond with appropriate size, no obvious defects, and good quality as the substrate, put the diamond substrate into a cleaning container filled with 45°C acetone cleaning solution, and put the container into an ultrasonic cleaning tank, adjust The temperature in the ultrasonic cleaning tank is 45°C, and the ultrasonic cleaning is carried out for 30 minutes. The diamond substrate after ultrasonic cleaning is taken out and placed in a drying oven for drying treatment at a temperature of 65°C; 100ml of concentrated hydrochloric acid is measured, and Measure 900ml of distilled water, slowly pour 100ml of concentrated hydrochloric acid into 900ml of distilled water in a fume hood, and keep stirring to mix evenly. Soak in dilute hydrochloric acid solution for 45s for chemical cleaning. After cleaning, take out the diamond substrate and put it in a drying oven for drying at a temperature of 120°C;

[0028] Adopt the diamond substrate after ...

Embodiment 2

[0030] Select an ultra-thin single-crystal diamond with appropriate size, no obvious defects, and good quality as the substrate, put the diamond substrate into a cleaning container filled with 45°C acetone cleaning solution, and put the container into an ultrasonic cleaning tank, adjust The temperature in the ultrasonic cleaning tank is 45°C, and the ultrasonic cleaning is carried out for 30 minutes. The diamond substrate after ultrasonic cleaning is taken out and placed in a drying oven for drying treatment at a temperature of 65°C; 100ml of concentrated hydrochloric acid is measured, and Measure 900ml of distilled water, slowly pour 100ml of concentrated hydrochloric acid into 900ml of distilled water in a fume hood, and keep stirring to mix evenly. Soak in dilute hydrochloric acid solution for 45s for chemical cleaning. After cleaning, take out the diamond substrate and put it in a drying oven for drying at a temperature of 120°C;

[0031] Adopt the diamond substrate after ...

Embodiment 3

[0033] Select an ultra-thin single-crystal diamond with appropriate size, no obvious defects, and good quality as the substrate, put the diamond substrate into a cleaning container filled with 45°C acetone cleaning solution, and put the container into an ultrasonic cleaning tank, adjust The temperature in the ultrasonic cleaning tank is 45°C, and the ultrasonic cleaning is carried out for 30 minutes. The diamond substrate after ultrasonic cleaning is taken out and placed in a drying oven for drying treatment at a temperature of 65°C; 100ml of concentrated hydrochloric acid is measured, and Measure 900ml of distilled water, slowly pour 100ml of concentrated hydrochloric acid into 900ml of distilled water in a fume hood, and keep stirring to mix evenly. Soak in dilute hydrochloric acid solution for 45s for chemical cleaning. After cleaning, take out the diamond substrate and put it in a drying oven for drying at a temperature of 120°C;

[0034]Adopt the diamond substrate after c...

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Abstract

The invention relates to the technical field of processing of a diamond substrate, and especially relates to a CVD single crystal diamond growth pretreatment method. The method can pre-treat a substrate before growth, remove contaminants on the surface of the substrate, and improve the quality and purity of the grown monocrystalline diamond; and comprises the following steps: (1) substrate selection; (2) ultrasonic cleaning; (3) first drying treatment; (3) chemical cleaning; (4) second drying treatment; (5) substrate transfer; (6) adjusting of parameters in cavity; (7) mixed etching; and (8) hydrogen etching.

Description

technical field [0001] The invention relates to the technical field of diamond substrate processing, in particular to a CVD single crystal diamond growth pretreatment method. Background technique [0002] Chemical vapor deposition (CVD) refers to gas phase reactions at high temperatures, such as thermal decomposition of metal halides, organic metals, hydrocarbons, etc., hydrogen reduction or chemical reactions of its mixed gases at high temperatures to precipitate metals, oxidation Inorganic materials such as objects and carbides. This technology was originally developed as a means of coating, but it is not only applied to the coating of heat-resistant substances, but also to the purification of high-purity metals, powder synthesis, semiconductor thin films, etc., and it is a characteristic technical field. The technical features are: high melting point substances can be synthesized at low temperature; the forms of precipitated substances are single crystal, polycrystalline...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/04C30B25/20
CPCC30B25/186C30B25/205C30B29/04
Inventor 刘宏明李升左浩
Owner 西安碳星半导体科技有限公司
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