Method for preparing thin layer graphene on surface of metal catalyst

A technology of metal catalyst and thin-layer graphene, which is applied in the direction of metal material coating process, coating, gaseous chemical plating, etc., can solve the problems of controllability and uniformity of high-quality graphene film layers, etc. Achieve the effect of reducing carbon content, simple process and promoting segregation
CN103572247AInactive Publication Date: 2014-02-12SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
Publication Date
2014-02-12
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention discloses a method for preparing thin layer graphene on the surface of a metal catalyst. The method comprises the following steps: 1, putting a metal catalyst matrix in a chemical vapor deposition (CVD) system, and heating and annealing in an H2 and Ar gas mixed atmosphere; 2, carrying out a high temperature carburizing reaction by utilizing different carbon sources; 3, slowly heating samples while etching by introducing a large flow of hydrogen; and 4, completely discharging hydrogen in the CVD system through the Ar gas after the hydrogen etching, and rapidly cooling to room temperature for segregating uniform graphene layers. The number of the graphene layer can be accurately controlled by changing the thickness, the carburizing amount and the hydrogen etching amount of the metal catalyst matrix. The method has the advantages of simple process, easy operation, compatibility with the semiconductor industry, realization of the controllable preparation of graphene, and a graphene material produced through the method has important application prospects in the electronic field, the photoelectric field, the sensing field and the like.
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Description

technical field

[0001] The invention relates to a preparation method of a graphene material, in particular to a method for preparing wafer-sized graphene with a controllable layer number and uniform thickness by segregating and growing on the surface of a metal catalyst. Background technique

[0002] Graphene is a carbon atom with SP 2 A two-dimensional monoatomic layer of a hexagonal crystal structure formed by bonds. Due to its unique structure and excellent physical properties, graphene has received extensive attention from the scientific community. In recent years, some researchers have developed a chemical vapor deposition (CVD) synthesis of graphene technology using Cu or Ni as a catalyst, which has shown great advantages in large-scale synthesis of nearly perfect graphene. Since graphene with different layers has different properties and corresponding applications, it is the goal pursued by researchers to realize the layer number controllable growth and process comp...

Claims

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