Method for preparing large-area and height ordered nanometer silica quantum dot array

Abstract

The method includes following steps: firstly alumina molding board is made by using electrochemical method;the molding board with highly ordered pore space structure is transplanted to semiconductor base plat; the natural quantum dot of nano-silicon is grown on the semiconductor base plate through the pore of the molding board by using PECVD; finally the aluminum molding board will be removed by using wet chemical method. The artificial quantum dot obtained by the invention has following features: average diameter is 30-50 nanometers; height is 20-30 nanometers; separation is 100 nanometers; area density is over 1X1010 /cm2;a plenty of silica natural quantum dots whose diameter are from 3-6 nanometers are embedded into each artificial quantum dot.

Description

technical field [0001] The invention relates to a method for preparing a semiconductor quantum dot array, in particular a method for preparing a large-area, highly ordered nano-silicon quantum dot array, which is used in the field of semiconductor material preparation. Background technique [0002] Quantum dots, especially semiconductor quantum dots, are expected to be applied in single-electron transistors, high-density memories, semiconductor lasers, and tunnel diodes due to the quantum confinement effect, and quantum dot devices have the advantages of small size, high efficiency, and low energy consumption. . The commonly used ways to grow quantum dots mainly include Stranski-Kranstanov (S-K) growth method and photolithography technology, but both methods require expensive equipment. The S-K growth method must meet the lattice mismatch and the obtained quantum dots have uneven size distribution and irregular arrangement, which greatly limits the preparation and applicati...

AI Technical Summary

Problems solved by technology

However, there is a common problem in these artificial quantum dots prepared by alumina template technology, that is, the diameter of artificial quantum dots is greater than 20 nanometers, which is not a real quantum system, and it is difficult for quantum confinement effects to occur, because there is a critical size for quantum effects. When the size of the quantum dot is larger than the critical size, it is difficult for the quantum confinement effect to occur, and the critical size of the semiconductor material is generally very small, only a few nanometers, such as silicon is only 4 nanometers