Fabrication of graphene quantum dots by magnetron sputtering

A technology of graphene quantum dots and radio frequency magnetron sputtering, which is applied in the direction of graphene, luminescent materials, chemical instruments and methods, etc., can solve the problems of graphene quantum dots and fluorescence difference that have not been seen yet, and achieve the quantum confinement effect Visible, simple operation, good size effect

Active Publication Date: 2016-01-06
QINGDAO HUAGAO GRAPHENE CORP LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The graphene quantum dots prepared by the above method, the graphene quantum dots themselves have poor fluorescence, and need to be further treated with organic substances such as (PEG1500N, ethylenediamine, oleylamine, etc.) to obtain graphene quantum dots with better fluorescence
After inquiring technical information in this field, there is no new method for preparing graphene quantum dots by RF magnetron sputtering technology (RF Magnetron Sputtering)

Method used

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  • Fabrication of graphene quantum dots by magnetron sputtering
  • Fabrication of graphene quantum dots by magnetron sputtering

Examples

Experimental program
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Effect test

Embodiment 1

[0029] Embodiment 1: a kind of preparation method of graphene quantum dot comprises the following steps:

[0030] (1) Set the mass as m c = 0.24g of graphite powder and a mass of m o =79.76g of ZnO powder mixed ball mill (graphite 2mol%), after the ball milling is completed, add 3ml polyvinyl alcohol (PVA) to the mixed powder as a viscous agent and stir well; hold the pressure for 4 minutes under the pressure of 40MPa to put the target Compression molding; target sintering temperature parameters: increase the temperature by 1.5°C per minute, heat it up to 1100°C and keep it for 4 hours.

[0031] (2) Put the glass substrate into the magnetron sputtering chamber after cleaning, the distance between the ceramic target and the glass substrate is 60mm, and the background pressure is 1×10 -4 mTorr, high-purity argon gas was introduced as the sputtering gas, the working pressure was 0.5mTorr, the sputtering power was 40W, and the growth time was 15 minutes.

[0032] Put the film s...

Embodiment 2

[0033] Embodiment 2: similar to embodiment 1, its difference is that ZnO powder is changed into Ga 2 o 3 .

Embodiment 3

[0034]Embodiment 3: similar to embodiment 1, its difference is that ZnO powder is changed into Al 2 o 3 .

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Abstract

The invention relates to a method of preparing a graphene quantum dot. The method is mainly characterized by comprising the following steps: preparing a graphene mixed thin film by virtue of a radio-frequency magnetron sputtering technology; diluting by use of diluted hydrochloric acid; filtering and extracting by virtue of a dialysis membrane to obtain the graphene quantum dot with higher quantum yield. The method is very simple to operate and environment-friendly, and the quantum dot obtained is very high in quantum yield. The particle size of the graphene quantum dot can be adjusted by changing the target material mixing proportion and the sputtering power, so that the graphene quantum dot has potential for large-scale preparation and wide application prospect.

Description

technical field [0001] The invention relates to a new method for preparing graphene quantum dots, using cheap graphite powder and simple oxides as raw materials, using magnetron sputtering technology at room temperature to prepare graphene quantum dots with good monodispersity and luminescent properties method. Background technique [0002] Graphene is a new type of carbonaceous material that is densely packed into a two-dimensional honeycomb crystal structure by a single layer of carbon atoms. Since the successful acquisition of two-dimensional graphene in 2004, it has caused an upsurge of research on this new material. This two-dimensional material has special electrical properties (such as good electrical conductivity, abnormal quantum Hall effect at room temperature, ultra-high electron mobility, etc.), good thermal conductivity (surface conductivity is 3000wm -1 K -1 ) and high mechanical strength (the surface strength is 1060Gpa), the wide bandgap can be tailored ac...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B31/04C09K11/65C01B32/184
Inventor 刘敬权潘东晓单福凯
Owner QINGDAO HUAGAO GRAPHENE CORP LTD
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