Graphene quantum dot prepared by virtue of magnetron sputtering technology

A technology of graphene quantum dots and radio frequency magnetron sputtering, which is applied in the direction of graphene, luminescent materials, chemical instruments and methods, etc., can solve the problems of graphene quantum dots and fluorescence difference that have not been seen yet, and achieve the quantum confinement effect Significant, simple operation, and environmentally friendly preparation process

Active Publication Date: 2014-03-26
QINGDAO HUAGAO GRAPHENE CORP LTD
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  • Abstract
  • Description
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Problems solved by technology

The graphene quantum dots prepared by the above method, the graphene quantum dots themselves have poor fluorescence, and need to be further treated with organic substances such as (PEG1500N, ethylenediamine, oleylamine, etc.) to obtain graphene quantum dots with better fluorescence
After consulting the technical information in this field, there is no new method for preparing graphene quantum dots using RF magnetron sputtering technology (RF Magnetron Sputtering)

Method used

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  • Graphene quantum dot prepared by virtue of magnetron sputtering technology
  • Graphene quantum dot prepared by virtue of magnetron sputtering technology

Examples

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Effect test

Embodiment 1

[0029] Embodiment 1: a kind of preparation method of graphene quantum dot comprises the following steps:

[0030] (1) Set the mass as m c =0.24g of graphite powder and mass m o =79.76g of ZnO powder mixed with ball mill (graphite 2mol%) After the ball milling is completed, add 3ml of polyvinyl alcohol (PVA) as a viscous agent to the mixed powder and stir well; keep the pressure at 40MPa for 4 minutes to press the target material ;Target sintering temperature parameters: heat up 1.5°C per minute, heat up to 1100°C for 4 hours.

[0031] (2) Put the glass substrate into the magnetron sputtering chamber after cleaning, the distance between the ceramic target and the glass substrate is 60mm, and the background pressure is 1×10 -4 mTorr, high-purity argon gas was introduced as the sputtering gas, the working pressure was 0.5mTorr, the sputtering power was 40W, and the growth time was 15 minutes.

[0032] Put the film sample prepared above into dilute hydrochloric acid solution, a...

Embodiment 2

[0033] Embodiment 2: similar to embodiment 1, its difference is that ZnO powder is changed into Ga 2 o 3 .

Embodiment 3

[0034]Embodiment 3: similar to embodiment 1, its difference is that ZnO powder is changed into Al 2 o 3 .

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Abstract

The invention relates to a method of preparing a graphene quantum dot. The method is mainly characterized by comprising the following steps: preparing a graphene mixed thin film by virtue of a radio-frequency magnetron sputtering technology; diluting by use of diluted hydrochloric acid; filtering and extracting by virtue of a dialysis membrane to obtain the graphene quantum dot with higher quantum yield. The method is very simple to operate and environment-friendly, and the quantum dot obtained is very high in quantum yield. The particle size of the graphene quantum dot can be adjusted by changing the target material mixing proportion and the sputtering power, so that the graphene quantum dot has potential for large-scale preparation and wide application prospect.

Description

technical field [0001] The invention relates to a new method for preparing graphene quantum dots, using cheap graphite powder and simple oxides as raw materials, using magnetron sputtering technology at room temperature to prepare graphene quantum dots with good monodispersity and luminescent properties method. Background technique [0002] Graphene is a new type of carbonaceous material that is densely packed into a two-dimensional honeycomb crystal structure by a single layer of carbon atoms. Since the successful acquisition of two-dimensional graphene in 2004, it has caused an upsurge of research on this new material. This two-dimensional material has special electrical properties (such as good electrical conductivity, abnormal quantum Hall effect at room temperature, ultra-high electron mobility, etc.), good thermal conductivity (surface conductivity is 3000wm -1 K -1 ) and high mechanical strength (the surface strength is 1060Gpa), the wide bandgap can be tailored ac...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B31/04C09K11/65C01B32/184
Inventor 刘敬权潘东晓单福凯
Owner QINGDAO HUAGAO GRAPHENE CORP LTD
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