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A lead telluride nanorod with uniform size, preparation method and application thereof

A nanorod and lead telluride technology is applied in the field of nanomaterials to achieve the effects of simple preparation process, uniform size distribution and good solubility

Active Publication Date: 2020-11-17
SUZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, at present, the synthesis of lead telluride nanorods with uniform size, good solubility and strong quantum confinement effect under low temperature conditions (below 150 °C) by thermal injection has not been reported.

Method used

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  • A lead telluride nanorod with uniform size, preparation method and application thereof
  • A lead telluride nanorod with uniform size, preparation method and application thereof
  • A lead telluride nanorod with uniform size, preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] In this example, the lead telluride nanorods were synthesized at a temperature of 100°C, and the specific steps were as follows:

[0030] 1) Preparation of lead precursor: Under the protection of nitrogen, add 89 mg (0.4 mmol) of lead oxide, 170 mg (1 mmol) of trans-2-decenoic acid and 8 g of octadecene into a 50 mL three-necked flask , Stir for 1 hour at a temperature of 120 ℃, until the solution becomes clear and transparent, and then vacuum-treat it at a temperature of 110 ℃ for 1 hour to remove the water and oxygen in the three-necked flask to obtain the lead precursor. stand-by;

[0031] 2) Preparation of tellurium precursor: In a nitrogen glove box, add 153 mg (1.2 mmol) of elemental tellurium to a glass bottle containing 1.2ml of tris(diethylamino)phosphine, and stir at room temperature until elemental tellurium Completely dissolve in the solution to obtain the tellurium precursor, ready for use;

[0032] 3) Preset ratio of lead-tellurium precursor and synthesis react...

Embodiment 2

[0037] In this example, the lead telluride nanorods were synthesized at a temperature of 120°C, and the specific steps are as follows:

[0038] 1) Preparation of lead precursor: Under the protection of nitrogen, add 89 mg (0.4 mmol) of lead oxide, 170 mg (1 mmol) of trans-2-decenoic acid and 8 g of octadecene into a 50 mL three-necked flask , Stir at 120 ℃ for 1 hour, until the solution becomes clear and transparent, then vacuumize at 110 ℃ for 1 hour to remove the water and oxygen in the three-necked flask to obtain the lead precursor, ready for use;

[0039] 2) Preparation of tellurium precursor: In a nitrogen glove box, add 153 mg (1.2 mmol) of elemental tellurium to a glass bottle containing 1.2ml of tris(diethylamino)phosphine, stir and dissolve at room temperature until tellurium The element is completely dissolved in the solution to obtain the tellurium precursor, ready for use;

[0040] 3) Preset the ratio of lead to tellurium precursor and the reaction at temperature: Disso...

Embodiment 3

[0045] In this example, the lead telluride nanorods were synthesized at a temperature of 140°C. The specific steps are as follows:

[0046] 1) Preparation of lead precursor: Under the protection of nitrogen, add 89 mg (0.4 mmol) of lead oxide, 170 mg (1 mmol) of trans-2-decenoic acid and 8 g of octadecene into a 50 mL three-necked flask , Stir at 120 ℃ for 1 hour, until the solution becomes clear and transparent, then vacuumize at 110 ℃ for 1 hour to remove the water and oxygen in the three-necked flask to obtain the lead precursor, ready for use;

[0047] 2) Preparation of tellurium precursor: In a nitrogen glove box, add 153 mg (1.2 mmol) of elemental tellurium to a glass bottle containing 1.2ml of tris(diethylamino)phosphine, stir and dissolve at room temperature until tellurium The element is completely dissolved in the solution to obtain the tellurium precursor, ready for use;

[0048] 3) Preset the lead-tellurium precursor ratio and the reaction at temperature: Dissolve 60 μL ...

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Abstract

The invention discloses a lead telluride nano rod with a uniform size, and a preparation method and applications thereof. According to the preparation method, a short chain organic acid (trans-2-decenoic acid) and lead oxide are combined to form a lead precursor; tri(diethylamino)phosphine and elemental tellurium are combined to form a tellurium precursor; the lead telluride nano rod with a uniform size is synthesized by regulating the reaction temperature and the ratio of the lead precursor to the tellurium precursor and adopting a heat injection method; the diameter of the nano rod is 2-5 nanometers, the length of the nano rod is 10 to 60 nanometers; the electronic belt of the nano rod is anisotropic, and the nano rod has a strong quantum confinement effect. The provided lead telluride nano rod can be well dissolved in an n-hexane solvent and has the advantages of wider application range and user-friendliness. In an ultraviolet visible-near infrared absorption spectrum, the characteristic absorption peaks of the lead telluride nano rod are in a range of 400-550 nm; and the nano rod has special optical properties and thus can be applied to the fields such as solar battery, photoelectric detector, thermoelectric devices, and the like.

Description

Technical field [0001] The invention belongs to the technical field of nanomaterials, and relates to a lead telluride nanorod, a preparation method and application thereof. The provided lead telluride nanorod has uniform size, good solubility, and extremely strong quantum confinement effect. Background technique [0002] Lead telluride (PbTe) in the narrow band gap lead chalcogenide semiconductor material has a large Bohr radius (46 nm), and the mass of electrons in lead telluride is smaller than that of holes, which makes its size and morphology adjustable The space is larger than that of lead selenide (PbSe), which makes its quantum confinement effect particularly significant. At the same time, it has the properties of high dielectric constant, high thermoelectric figure of merit (ZT), and adjustable energy level. In addition, the unique anisotropic electron band structure of lead telluride promotes its special optoelectronic properties. Therefore, materials such as lead tellu...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B19/04B82Y40/00
CPCB82Y40/00C01B19/007C01P2002/72C01P2002/84C01P2004/04C01P2004/16
Inventor 马万里韩璐
Owner SUZHOU UNIV
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