Etching solution for silver alloy
A technology of silver alloy and etching solution, which is applied in the field of etching solution, and can solve the problems of not having, not widely using chip or panel yellowing process, low resistance value, etc.
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Embodiment 1-8
[0057] Prepare a solution of hydrogen peroxide and nitric acid according to the ratio in Table 1 below, and add water to 100 grams to prepare an etching solution with the following concentration. A silicon substrate with a silver alloy thin film is coated with a photoresist layer by spin coating; wherein the silver alloy thin film is formed on the silicon substrate by sputtering, and contains more than 98% silver, 0.9% Palladium and more than 1.0% copper. Subsequently, the silicon substrate was exposed to form a patterned photoresist layer; the silicon substrate was then coated or immersed in the etching solution configured according to Table 1, and the etching rate was measured. The results are shown in Table 1 below.
[0058] Example
[0059] After the etching was completed, the silicon substrate was inspected to find that the silicon substrate and the patterned photoresist were not damaged. Therefore, the etchant only selectively etches the silver alloy.
Embodiment 9-23
[0061] Prepare a solution of hydrogen peroxide and sulfuric acid according to the ratio in Table 2 below, and add water to 100 grams to prepare an etching solution with the following concentration. A silicon substrate with a silver alloy film is coated with a photoresist layer by spin coating; wherein the silver alloy film is formed on the silicon substrate by sputtering, and contains more than 98% silver, 0.9 % palladium and more than 1.0% copper. Subsequently, the silicon substrate was exposed to form a patterned photoresist layer; the silicon substrate was then coated or immersed in the etching solution configured according to Table 2, and the etching rate was measured. The results are shown in Table 2 below.
[0062] Example
[0063] After the etching was completed, the silicon substrate was inspected to find that the silicon substrate and the patterned photoresist were not damaged. Therefore, the etchant only selectively etches the silver alloy.
Embodiment 24-32
[0065] Prepare a solution of hydrogen peroxide, sulfuric acid, and ammonium acetate according to the ratio in Table 3 below, and add water to 100 grams to prepare an etching solution with the following concentration. A silicon substrate with a silver alloy thin film is coated with a photoresist layer by spin coating; wherein the silver alloy thin film is formed on the silicon substrate by sputtering, and contains more than 98% silver, 0.9% Palladium and more than 1.0% copper. Subsequently, the silicon substrate was exposed to form a patterned photoresist layer; the silicon substrate was then coated or immersed in the etching solution configured according to Table 3, and the etching rate was measured. The results are shown in Table 3 below.
[0066] Example
[0067] After the etching was completed, the silicon substrate was inspected to find that the silicon substrate and the patterned photoresist were not damaged. Therefore, the etchant only selectively etches the s...
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