Front conductive paste for crystalline silicon solar cell, preparation method thereof, and solar cell

A technology for solar cells and conductive paste, applied in the field of solar cells, can solve the problems of inability to etch the anti-reflection insulating layer, the reduction of the photoelectric conversion efficiency of the cell, and the increase of the surface resistance value of the front electrode and the silicon wafer.

Active Publication Date: 2021-06-08
SOLTRIUM ADVANCED MATERIALS TECH LTD SHENZHEN
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The technical problem to be solved by the present invention is to provide a front conductive paste for crystalline silicon solar cells and a preparation method thereof to solve the problem that the existing front conductive paste cannot effectively etch the anti

Method used

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  • Front conductive paste for crystalline silicon solar cell, preparation method thereof, and solar cell
  • Front conductive paste for crystalline silicon solar cell, preparation method thereof, and solar cell
  • Front conductive paste for crystalline silicon solar cell, preparation method thereof, and solar cell

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preparation example Construction

[0054] Such as figure 1 As shown, the preparation method of the front conductive slurry of the crystalline silicon solar cell according to the present invention includes the following steps:

[0055] S01. The preparation step of the oxide etch is as follows: according to the ratio of the ingredients as described above, the oxide etchant feedstock is referred to, and uniform mixing is performed; the uniform mixed oxide etchant is placed in the heating furnace heating. Until 900 ~ 1100 ° C, 60-180 min at 900-1100 ° C for 60-180 min, resulting in a melted liquid oxide etchant; the melt is quenched to obtain an oxide etchant particles. The oxide etchant particles were dried in a temperature of 60 to 80 ° C; the dry oxide etchant particles were crushed to obtain an oxide etchant powder having a particle size of 0.5 to 5.0 μm. The dry oxide etch powder was then dried at 80 to 100 ° C.

[0056] Preferably, the quenching mode is poured into 5-25 ° C water into 5-25 ° C water or cooled in ...

Embodiment 1

[0075] A frontal conductive slurry of a crystalline silicon solar cell, calculated by total weight, including a component of the following formulation: 88.5 silver powder; 9.0 parts of the organic body; 2.5 oxide etching agents.

[0076] Among them, the total amount of the oxide etch is 100%, including the following weight components:

[0077] PBO 25%, TEO 2 35%, Li 2 O 0.5%, SIO 2 6%, B 2 O 3 6%, BI 2 O 3 14.4%, ZnO 6%, WO 3 1%, MGO 6%, Al 2 O 3 0.1%.

[0078]The method of preparing the oxide etch is: according to the ratio of the oxide etching agent according to the above, uniform mixing; the homogeneous mixed oxide etch material is placed in the heating furnace heating to 1000 ° C, 120 min at 1000 ° C for 120 minutes, to obtain a molten liquid oxide etchant; pour the molten liquid oxide etch into the normal temperature (25 ° C) water to obtain an oxide etchant particle; The oxide etchant particles were placed in a drying tank at 80 ° C to dry; the dried oxide etch particles wer...

Embodiment 2

[0086] A frontal conductive slurry of a crystalline silicon solar cell, calculated by total weight, including a component of the following formulation: 88.5 silver powder; 9.0 parts of the organic body; 2.5 oxide etching agents.

[0087] Among them, the total amount of oxide etch is 100%, including the following components:

[0088] PBO 50%, TEO 2 10%, Li 2 O 10%, SIO 2 1%, B 2 O 3 0.1%, BI 2 O 3 13.2%, ZnO0.1%, WO 3 15%, MGO 0.1%, TIO 2 0.5%.

[0089] The method of preparing the oxide etch is: according to the ratio of the oxide etching agent according to the above, uniform mixing; the homogeneous mixed oxide etch material is placed in the heating furnace heating to 1000 ° C, 120 min at 1000 ° C for 120 minutes, to obtain a molten liquid oxide etchant; pour the molten liquid oxide etch into the normal temperature (25 ° C) water to obtain an oxide etchant particle; The oxide etchant particles were placed in a drying tank at 80 ° C to dry; the dried oxide etch particles were placed...

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Abstract

The present invention provides a front conductive paste for crystalline silicon solar cells. In parts by weight, the front conductive paste for crystalline silicon solar cells includes the following raw material components: 80.0-93.0 parts of metal powder; 6.0-15.0 parts of organic carrier; 1.0-5.0 parts of material etchant; wherein, the oxide etchant contains at least PbO, B 2 o 3 , MgO and WO 3 , and the MgO and WO 3 The weight ratio is 0.1:15~6:1; B 2 o 3 and WO 3 The weight ratio of 0.1:15~6:1; WO 3 The weight ratio with PbO is 1:50-15:25. During the sintering process, the front conductive paste can make metal powder and silicon form good ohmic contact, greatly reduce resistance, and finally obtain a front electrode with low contact resistance, good conductivity and strong adhesion.

Description

Technical field [0001] The present invention belongs to the field of solar cell technology, and in particular, the present invention relates to a positive conductive slurry of a crystalline silica solar cell and a preparation method thereof and a solar cell. Background technique [0002] Solar energy is an inexhaustible cleaning energy. With the increasing depletion of non-renewable energy such as coal, oil, development and use solar energy into a hot spot. Solar cells based on this idea are an important means to use solar energy. Currently, industrialized crystalline silica solar cells have become a model of solar cell applications. [0003] The battery sheet is a core component of the crystalline silica solar cell, and an electrode is required to be made on the front and back surfaces of the battery sheet in order to collect and export the current generated under the light. The method of manufacturing electrodes is varied, with wire mesh printing and co-burning is the most comm...

Claims

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Application Information

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IPC IPC(8): H01B1/22
CPCH01B1/22
Inventor 张杰刘小丽孙丰振李宇黄玉平李德林
Owner SOLTRIUM ADVANCED MATERIALS TECH LTD SHENZHEN
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