Front conductive paste for crystalline silicon solar cell, preparation method thereof, and solar cell
A technology for solar cells and conductive paste, applied in the field of solar cells, can solve the problems of inability to etch the anti-reflection insulating layer, the reduction of the photoelectric conversion efficiency of the cell, and the increase of the surface resistance value of the front electrode and the silicon wafer.
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
preparation example Construction
[0054] Such as figure 1 As shown, the preparation method of the front conductive slurry of the crystalline silicon solar cell according to the present invention includes the following steps:
[0055] S01. The preparation step of the oxide etch is as follows: according to the ratio of the ingredients as described above, the oxide etchant feedstock is referred to, and uniform mixing is performed; the uniform mixed oxide etchant is placed in the heating furnace heating. Until 900 ~ 1100 ° C, 60-180 min at 900-1100 ° C for 60-180 min, resulting in a melted liquid oxide etchant; the melt is quenched to obtain an oxide etchant particles. The oxide etchant particles were dried in a temperature of 60 to 80 ° C; the dry oxide etchant particles were crushed to obtain an oxide etchant powder having a particle size of 0.5 to 5.0 μm. The dry oxide etch powder was then dried at 80 to 100 ° C.
[0056] Preferably, the quenching mode is poured into 5-25 ° C water into 5-25 ° C water or cooled in ...
Embodiment 1
[0075] A frontal conductive slurry of a crystalline silicon solar cell, calculated by total weight, including a component of the following formulation: 88.5 silver powder; 9.0 parts of the organic body; 2.5 oxide etching agents.
[0076] Among them, the total amount of the oxide etch is 100%, including the following weight components:
[0077] PBO 25%, TEO 2 35%, Li 2 O 0.5%, SIO 2 6%, B 2 O 3 6%, BI 2 O 3 14.4%, ZnO 6%, WO 3 1%, MGO 6%, Al 2 O 3 0.1%.
[0078]The method of preparing the oxide etch is: according to the ratio of the oxide etching agent according to the above, uniform mixing; the homogeneous mixed oxide etch material is placed in the heating furnace heating to 1000 ° C, 120 min at 1000 ° C for 120 minutes, to obtain a molten liquid oxide etchant; pour the molten liquid oxide etch into the normal temperature (25 ° C) water to obtain an oxide etchant particle; The oxide etchant particles were placed in a drying tank at 80 ° C to dry; the dried oxide etch particles wer...
Embodiment 2
[0086] A frontal conductive slurry of a crystalline silicon solar cell, calculated by total weight, including a component of the following formulation: 88.5 silver powder; 9.0 parts of the organic body; 2.5 oxide etching agents.
[0087] Among them, the total amount of oxide etch is 100%, including the following components:
[0088] PBO 50%, TEO 2 10%, Li 2 O 10%, SIO 2 1%, B 2 O 3 0.1%, BI 2 O 3 13.2%, ZnO0.1%, WO 3 15%, MGO 0.1%, TIO 2 0.5%.
[0089] The method of preparing the oxide etch is: according to the ratio of the oxide etching agent according to the above, uniform mixing; the homogeneous mixed oxide etch material is placed in the heating furnace heating to 1000 ° C, 120 min at 1000 ° C for 120 minutes, to obtain a molten liquid oxide etchant; pour the molten liquid oxide etch into the normal temperature (25 ° C) water to obtain an oxide etchant particle; The oxide etchant particles were placed in a drying tank at 80 ° C to dry; the dried oxide etch particles were placed...
PUM
Property | Measurement | Unit |
---|---|---|
Thickness | aaaaa | aaaaa |
Thickness | aaaaa | aaaaa |
Particle size | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com