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Method of manufacturing an image sensor

PendingCN122699405AThe surface has small undulations and is relatively smoothImprove thickness uniformity
The application provides a manufacturing method of an image sensor. The manufacturing method comprises the following steps: providing a substrate, the substrate having an isolation structure, the top surface of the isolation structure protruding from the top surface of the substrate; forming a silicon nitride material layer on the substrate by using a low-pressure chemical vapor deposition process, the silicon nitride material layer covering the top surface of the substrate and the isolation structure; coating a photoresist on the silicon nitride material layer to form a second photoresist layer, exposing and developing the second photoresist layer to form a patterned second photoresist layer; taking the patterned second photoresist layer as a mask to etch the silicon nitride material layer to form a patterned second hard mask layer; and taking the patterned second hard mask layer as a mask to etch the substrate to form a groove accommodating a vertical transfer gate. In this way, the photolithography process window of the vertical transfer gate in the image sensor can be expanded, and the Hole miss phenomenon in the manufacturing process of the vertical transfer gate can be effectively reduced.
Owner:RONGXIN SEMICONDUCTOR (NINGBO) CO LTD