51 results about "Tin thin films" patented technology

The invention discloses a BDD electrode material and a preparation method thereof. The preparation method comprises the following core steps: pretreating the surface of a porous titanium substrate; depositing a nanoscale TiN film layer on the surface of the pretreated porous titanium substrate in advance; depositing a layer of single-walled carbon nanotube network on the TiN thin film layer by using an electrophoretic deposition method; growing a highly-doped BDD layer on the single-walled carbon nanotube network by adopting a plasma enhanced chemical vapor deposition technology; repeating the two steps to form a multi-layer SWCNT / BDD composite structure, and controlling the thickness of the multi-layer SWCNT / BDD composite structure to be 1-50 microns; and finally, depositing a low-doped BDD active layer with the thickness of 1-5 microns by adopting a hot filament chemical vapor deposition (HFCVD) technology. According to the pulse laser assisted preparation process provided by the invention, the femtosecond laser pulse is introduced to replace traditional plasma treatment, so that the process flow is simplified, and the efficiency is improved; according to the technology, the process is simplified, the quality of the TiN film is improved through accurate energy input, and a new way is opened up for further improving the performance of the BDD electrode.

This invention relates to the field of thin film technology, specifically disclosing a method and a thin film for preparing single-crystal TiN thin films based on pulsed DC magnetron sputtering. The method includes: placing a substrate into the sputtering chamber of a magnetron sputtering apparatus, evacuating and heating it to 400°C; introducing an activation gas and performing initial magnetron sputtering on a titanium target at a sputtering threshold to form an adhesion-promoting layer on the substrate surface; turning off the activation gas and then introducing a reactive sputtering gas into the sputtering chamber; then performing high-intensity sputtering while simultaneously turning on a bias power supply, wherein the bias power supply is a synchronous pulse power supply that is inversely phase to the pulsed DC power supply; turning off the pulsed DC power supply and the introduction of nitrogen in the reactive sputtering gas, and continuing magnetron sputtering on the substrate; cycling 2-4 times to cool to room temperature to obtain a single-crystal TiN thin film. In this application, the substrate temperature is only 400°C during deposition, thus reducing energy consumption and shortening the time during subsequent cooling. The titanium nitride thin film prepared in this application exhibits a high sputtering deposition rate and high crystal quality.

The invention discloses a radio frequency superconducting material performance testing system and a surface resistance measuring method.The radio frequency superconducting material performance testing system comprises a radio frequency cavity module, a low temperature module and a measuring module, the radio frequency cavity module comprises a mushroom-shaped superconducting cavity, the inner wall of the superconducting cavity is plated with a Ni3tin film, and the inner wall of the superconducting cavity is plated with a Ni3tin film; the low-temperature module is provided with a multi-stage cooling structure and a magnetic shielding shell. The measuring module is used for collecting the sample temperature, the magnetic field, the vacuum degree, the radio frequency power and the direct-current power of the heater. According to the radio frequency superconducting material performance testing system, by optimizing the design of the mushroom-shaped cavity and adopting the Nb3Sn coating technology and the efficient conduction cooling low-temperature module, the dependence of a traditional radio frequency material testing system on a liquid helium low-temperature system is eliminated, a compact testing platform is formed, and high-field and high-resolution measurement of the surface resistance of an SRF material is achieved.

Provided are: bis(alkylcyclopentadienyl)tin or bis(alkyltetramethylcyclopentadienyl)tin having a high vapor pressure even at lower temperatures, typified by bis(ethylcyclopentadienyl)tin; a precursor for chemical vapor deposition containing any of the above-mentioned organotin compounds as a main component; and a method of producing a tin-containing thin film by an atomic layer deposition process using the precursor for chemical vapor deposition. A precursor for chemical vapor deposition containing bis(alkylcyclopentadienyl)tin or bis(alkyltetramethylcyclopentadienyl)tin represented by the following Formula (1) as a main component: (In Formula (1), R1 and R2 each independently represent hydrogen or an alkyl group having 6 or less carbon atoms, and R3 and R4 each independently represent an alkyl group having 6 or less carbon atoms.)

This invention provides a method for atomic layer deposition of TiN thin films, comprising: placing a trenched substrate into an atomic layer deposition reaction chamber and preheating the substrate to a set temperature; TiCl4 pulse and adsorption: introducing TiCl4 gas pulses into the reaction chamber until TiCl4 reaches saturation adsorption on the substrate surface; rinsing; NH3 pulse and reaction: introducing NH3 gas pulses into the reaction chamber to generate a monolayer TiN thin film on the substrate surface; rinsing; and cycling the atomic layer deposition process to obtain a TiN thin film of a predetermined thickness. This invention synergistically optimizes the process temperature, NH3 flow rate, and rinsing conditions of atomic layer deposition, promoting the formation of a denser (111) preferred orientation structure in the TiN thin film, significantly reducing lattice distortion caused by Cl atoms embedded in the TiN lattice, and obtaining a TiN thin film with low resistivity, low surface roughness, and high aspect ratio coverage.

The present disclosure provides a method for preparing a superconducting printed circuit board, including: preparing a circuit board substrate; preparing copper circuits on the front side and / or the back side of the circuit board substrate; and tinning the surface of the copper circuits to form a tin thin film layer, thereby obtaining a single-piece circuit board substrate; laminating a plurality of single-piece circuit board substrates to complete the preparation of the superconducting printed circuit board. The present disclosure further provides a superconducting printed circuit board, including: at least one single-piece circuit board substrate; each circuit board substrate including: a circuit board substrate; copper circuits prepared on the front side and / or the back side of the circuit board substrate; and a tin thin film layer prepared on the surface of the copper circuits.

The invention discloses a forming preparation process of a hard alloy rod capable of reducing cracks, which comprises the following steps: mixing WC powder, Co powder, Ni powder, CrCpowder, TiC nano powder and a composite adhesive according to a ratio, carrying out ball milling and drying to obtain mixed powder, depositing a TiN film on the surface of a mold and spraying a fluorinated polymer lubricating film on the surface of the mold to obtain the hard alloy rod capable of reducing the cracks. The mixed powder is put into a mold to be subjected to compression molding, a blank is obtained and subjected to multi-section temperature control sintering in a sintering furnace through degreasing and pre-sintering treatment, and a hard alloy rod is obtained; the TiC nano powder and the WC powder are combined, so that the wear resistance and the strength of the hard alloy rod can be improved, and cracks are reduced; by depositing the TiN film and spraying the fluorinated polymer lubricating film on the surface of the mold, the demolding performance of the product can be improved; in the sintering process, through multi-section temperature control, microwave heating and pressure sintering, tight combination of powder particles can be effectively promoted, compactness is improved, and cracks of the hard alloy rod are avoided.

The invention provides a tin oxide thin film and a preparation method and application thereof, relates to the technical field of solar cells, and can improve the proportion of tetravalent tin in the tin oxide thin film and enable the energy level of the tin oxide thin film to be better matched with perovskite, thereby improving the performance of a device. According to the preparation method of the tin oxide thin film, the tin oxide thin film is deposited on a substrate through an atomic layer deposition technology, and in the deposition process, a first oxygen source and a second oxygen source are continuously used as oxygen sources to react with a tin metal organic source, the first oxygen source is selected from one or more of water, hydrogen peroxide and oxygen, the process temperature of the reaction between the second oxygen source and the tin metal organic source is less than 100 DEG C, the oxidation intensity of the second oxygen source to tin metal is greater than that of the first oxygen source, and the generated product is tetravalent tin oxide.

Method for manufacturing a coil component (1) comprising the following steps: a step to provide a wire comprising a linear central conductor (3a) and an insulating coating (3b) covering a circumferential surface of the central conductor; a step to provide a metal terminal which is to be electrically connected to the central conductor (3a) at an end section of the wire and which has a surface on which a tin-containing film (27) containing tin is arranged and over which at least the end section of the wire is to be arranged; and a step to weld the central conductor (3a) of the wire to the metal terminal by irradiating at least the tin-containing film (27) with a laser beam to perform welding with the end section of the wire, wherein the end section of the wire is arranged along the tin-containing film; wherein in the step of welding the central conductor (3a) of the wire to the metal terminal the laser beam is emitted, the end section of the wire being in contact with the tin-containing film (27); wherein the step of welding the central conductor (3a) of the wire to the metal terminal further comprises flattening the end section of the wire into an elongated shape and temporarily securing the end section of the wire to the metal terminal by thermocompression bonding the end section of the wire to the tin-containing film (27) before the step of irradiation with the laser beam takes place, and wherein the end section of the wire is brought into contact with the tin-containing film (27) such that a principal axis direction of a subsection of the elongated shape of the wire runs along a surface of the tin-containing film.

The present invention discloses a radio frequency (RF) superconducting material performance testing system and surface resistance measurement method. The RF superconducting material performance testing system comprises an RF cavity module, a cryogenic module, and a measurement module. The RF cavity module includes a mushroom-shaped superconducting cavity with a niobium-tin thin film coated on its inner wall. The cryogenic module is equipped with a multi-stage cooling structure and a magnetic shielding shell. The measurement module is used to collect sample temperature, magnetic field, vacuum level, RF power, and heater DC power. By optimizing the mushroom-shaped cavity design, utilizing Nb3Sn coating technology, and a cryogenic module with efficient conduction cooling, this RF superconducting material performance testing system eliminates the reliance of traditional RF material testing systems on liquid helium cryogenic systems, creating a compact testing platform that enables high-field and high-resolution measurement of the surface resistance of SRF materials.

The application discloses a cavity processing method for RF superconducting accelerating cavity conduction cooling, and the steps of the method comprise the following steps: 1) depositing a niobium tri-tin film on the inner surface of a superconducting cavity, and vertically testing the obtained niobium tri-tin film cavity in liquid helium; 2) after cleaning and vacuumizing the niobium tri-tin film cavity, filling the inside with a protective gas; 3) performing sand blasting treatment on the outer surface of the superconducting cavity to facilitate copper powder deposition; 4) adopting a cold spraying process to coat copper on the outer surface of the superconducting cavity after sand blasting treatment, so as to form a cold sprayed copper layer; 5) performing mechanical polishing on the equatorial position of the superconducting cavity and the positions close to the ellipsoid part on both sides of the beam tube; 6) sleeving an oxygen-free copper hoop ring matched with the equatorial position of the superconducting cavity into the equator of the superconducting cavity, and fixing an oxygen-free copper hoop matched with the beam tube of the superconducting cavity on both beam tubes of the superconducting cavity; and 7) performing cold sprayed copper treatment on the oxygen-free copper hoop ring and the positions on both sides of the oxygen-free copper hoop of the superconducting cavity again, so as to form a secondary cold sprayed copper layer.

This invention discloses a photodetector based on PVA-modulated SnO conductivity type, its fabrication method, and its applications. The detector comprises a silicon substrate, a polyvinyl alcohol (PVA) interface modulation layer, an N-type tin oxide channel layer, and an electrode layer, stacked sequentially. The fabrication method involves spin-coating a PVA thin film onto the silicon substrate and drying it. A tin oxide thin film is then deposited by magnetron sputtering, followed by high-temperature annealing in air at 520-680°C. Finally, the electrodes are fabricated. This invention utilizes the synergistic effect of PVA thermal decomposition and high-temperature annealing to transform SnO from an intrinsic P-type stable type to a high-performance N-type. The resulting detector exhibits high on / off ratio, high mobility, fast photoresponse, and low dark current. Furthermore, the process is simple and low-cost, demonstrating promising application prospects.

One exemplary embodiment provides a substrate processing method. The method includes: providing a substrate, the substrate including a carbon-containing film, an intermediate film on the carbon-containing film, and a tin-containing film on the intermediate film, the tin-containing film having an opening pattern; first etching, the first etching including etching the intermediate film using the tin-containing film as a mask to transfer the opening pattern to the intermediate film; and second etching, the second etching using a plasma formed from a processing gas to remove the tin-containing film and etch the carbon-containing film using the intermediate film as a mask, the processing gas including hydrogen, halogen or carbon, and oxygen.

The invention provides an AlOx P-type dipole MOS device and a preparation method thereof, the AlOx P-type dipole MOS device comprises a P-type silicon substrate, a SiO2 thin film, a HfO2 thin film, an AlOx thin film, a TiN thin film and a W thin film which are arranged from bottom to top, a Ni thin film is deposited on the back surface of a silicon wafer of the P-type silicon substrate, after an ultrathin AlOx dipole layer is deposited on the HfO2 thin film, the SiO2 thin film, the HfO2 thin film and the AlOx thin film are grown in situ in a whole process by adopting an ALD process through ultra-short-time high-temperature annealing, and the W thin film is deposited on the back surface of a silicon wafer of the W thin film. Flat-band voltage regulation and control of the MOS device are achieved through fire driving, Al is diffused into HfO2 after driving annealing, a dipole is formed on a High k / SiO2 interface layer, the local chemical environment and charge distribution at the interface are changed, and therefore a fixed electric dipole layer is formed.

The utility model relates to the technical field of semiconductors, in particular to a semiconductor coated chip, which comprises a P surface gold-plated film, a substrate P surface, an active area, a substrate N surface, an N surface gold-plated film and at least one gold-tin film group, the P surface gold-plated film is arranged on the substrate P surface, and the gold-tin film group is arranged on the substrate N surface. The utility model provides a semiconductor coated chip, at least one film group containing various materials is alternately generated on the surface of the chip, on one hand, evaporation coating equipment can be fully utilized in the manufacturing process of the semiconductor coated chip, gold-tin films deposited on the surface of a heat sink again in the technological process are reduced, and the manufacturing period is saved; and on the other hand, the semiconductor coating chip is directly bonded with the heat sink carrier, so that the welding process flow of the chip and the carrier can be simplified, the voidage can be reduced, the performance of the chip is improved, and the service life of the chip is prolonged.

This invention discloses a low-accelerating-voltage radio frequency (RF) cavity, belonging to the field of particle accelerator technology. The RF cavity includes a standing-wave resonant cavity, with its core improvement lying in the periodic arc-shaped corrugated structure on the surface of the inner conductor, and the inner conductor surface being coated with a 5-10 nm thick TiN thin film. This invention disrupts the resonance conditions for secondary electron multiplication through the periodic corrugated structure, while simultaneously utilizing the TiN thin film to reduce the secondary electron yield on the inner conductor surface. The synergistic effect of these two methods achieves highly efficient suppression of the secondary electron multiplication effect with minimal impact on the cavity's RF performance. This low-accelerating-voltage RF cavity has a simple structure and reliable operation, effectively improving the stability and reliability of cavity operation. It is particularly suitable for the focusing cavity of petal accelerators, significantly improving beam quality and reducing beam loss.

Provided is a method for producing a film containing Sn and Si, which includes: an Sn film formation step for forming an Sn-containing film using a tin compound as a starting material gas; and an Si film formation step for forming an Si-containing film using a silicon compound as a starting material gas. The film formation is performed by a chemical vapor deposition method or an atomic layer deposition method by supplying the starting material gas into a chamber in which an object to be processed having a film formation surface is housed.

This invention provides an AlO x P-type dipole MOS device and its fabrication method, including a bottom-up arrangement of a P-type silicon substrate, a SiO2 thin film, an HfO2 thin film, and an AlO2 thin film. x Thin films, TiN thin films, and W thin films, with Ni thin films deposited on the back side of the P-type silicon substrate, and ultrathin AlO films deposited on HfO2 thin films. x After the dipole layer, SiO2 thin films, HfO2 thin films, and AlO2 thin films are grown in situ using the ALD process through an ultra-short time high temperature annealing process. x Thin film, and fire-driven annealing realizes flat-band voltage regulation of MOS device. After driving annealing, Al diffuses into HfO2 and forms a dipole in the High k / SiO2 interface layer, which changes the local chemical environment and charge distribution at the interface, thereby forming a fixed electric dipole layer.

The application belongs to the technical field of semiconductors and relates to a low-resistance TiN film and a preparation method and application thereof, and the preparation method at least comprises the following steps: TiCl4 and NH3 are used as precursors, a TiN film is prepared through atomic layer deposition, and the obtained TiN film is treated with SiH4 during the deposition process; wherein the resistance of the TiN film is less than or equal to 305 ohms / square. In the deposition process of the TiN film, a strong reducing gas SiH4 is introduced to selectively reduce the adsorbed oxygen and weakly combined oxygen on the surface of the TiN, so as to reduce the oxygen doping concentration, significantly reduce the film resistance, and fundamentally inhibit the high-resistance problem caused by oxygen doping and lattice defects.

Precursors useful for forming tin-containing films are provided. The precursors include functionalized tin compounds in which one or more ligands are coordinated to Sn and the Sn is functionalized with at least one functional group. Methods for forming the precursors and for forming tin-containing films using the precursors are also provided.

The invention discloses a tin oxide thin film atomic layer deposition method for a perovskite laminated cell. The perovskite laminated cell sequentially comprises an ITO conductive substrate layer, a first hole transport layer, a wide-band-gap perovskite light absorption layer, a first electron transport layer, a gradient tin oxide tunneling layer, a gold electrode composite layer, a second hole transport layer, a narrow-band-gap perovskite light absorption layer, a second electron transport layer, a gradient tin oxide barrier layer and a metal electrode from bottom to top. The atomic layer deposition process parameters of the gradient tin oxide tunneling layer and the gradient tin oxide barrier layer are regulated and controlled through at least one of gradient temperature deposition and gradient purging time regulation and control; a multi-layer tin oxide thin film structure with carrier concentration gradient electrical characteristics is constructed on the nanoscale; gradient regulation and control of the electrical performance of the perovskite laminated cell can be realized, and the multi-interface requirement of the laminated cell can be met.

The present invention relates to a novel organotin compound, a method for preparing same, and a method for producing a tin-containing thin film using same. The organotin compound according to the present invention exhibits good thermal stability, high volatility, and vapor pressure, and thus is very useful as a precursor for a tin-containing thin film. Furthermore, the compound exists in a liquid state at room temperature and atmospheric pressure, which facilitates handling. Therefore, a high-quality tin-containing thin film can be manufactured using the thin-film deposition composition comprising the organotin compound according to the present invention. In addition, the organotin compound according to the present invention has high extreme ultraviolet (EUV) sensitivity, and thus a photoresist composition comprising same can form a photoresist pattern with excellent resolution and sensitivity.

To provide a thin film forming method for depositing a good quality thin film using an organotin compound.SOLUTION: An organotin compound is represented by the following formula, where L1 and L2 are independently selected from an alkoxy group and an alkylamino group, R1 is a substituted / unsubstituted C6-8 aryl group, and R2 is selected from a substituted / unsubstituted C1-4 linear alkyl group, a C2-4 allyl group and the like.SELECTED DRAWING: Figure 2a

The present invention discloses an α-stannous tungstate thin film, a preparation method thereof and an application thereof. The preparation method includes: under a vacuum condition, making a tungsten oxide thin film contact and react with a vapor stream containing a stannous source, thereby preparing the α-stannous tungstate thin film. The α-stannous tungstate thin film prepared by the stannous vapor method of the present invention has an excellent optical band gap and can be preferably applied to fields such as photoelectrocatalysis, photocatalysis or gas sensors. At the same time, the stannous vapor method of the present invention is simple in operation and low in cost, and can realize large-scale commercial application.

The invention discloses a preparation method of a tin oxide thin film and a solar cell, and the method comprises the steps: depositing a tin oxide precursor solution on a substrate, and carrying out the annealing treatment to form the tin oxide thin film in situ. The method optimizes the nucleation and crystallization behaviors of the tin oxide film on the substrate, ensures the uniformity and compactness of the film, improves the interface quality, and improves the electron transmission performance of the film by adjusting the surface properties of the film, enhancing the energy level matching, reducing the electron recombination phenomenon and improving the electron extraction efficiency. And moreover, the production cost and the environmental influence are reduced, and the large-scale application of the process is ensured.

The invention provides certain organotin compounds which are believed to be useful in the vapor deposition of tin-containing films onto the surface of microelectronic device substrates, as well as in the deposition of EUV-patternable films. Also provided are certain novel precursor compositions. Also disclosed are processes for using the novel precursors to form films.

The invention relates to a preparation method of a tin oxide film, and relates to the technical field of semiconductor materials, and the preparation method comprises the following steps: firstly carrying out tetra (dimethylamino) tin pulse on the surface of a substrate, then carrying out nitrogen first purging, then carrying out pulse by using an H2O2 solution, then carrying out nitrogen second purging, and then carrying out mixed gas pulse. And carrying out third purging with nitrogen, repeating the steps until the target thickness is reached, and carrying out annealing treatment on the deposited substrate to obtain the tin oxide thin film. Through the synergistic effect of different oxygen sources, the tin oxide film which is high in crystallinity, few in defect, excellent in electrical property and good in uniformity is prepared under the low-temperature condition, and therefore the comprehensive performance of the film is comprehensively improved.

The invention provides certain mixed Sn (II) amide / alkoxide precursor compounds. These compounds are useful in precursor compositions in the vapor deposition of tin-containing films such as tin oxide films onto a surface of a microelectronic device. These precursor compounds are useful in, for example, extreme ultraviolet light (EUV) lithography techniques used in microelectronic device manufacturing when paired with certain counter-reactants in a vapor deposition process. In this process, the resulting organotin polymeric surface is thus EUV-patternable insofar as when exposed to a patterned beam of EUV light, exposed portions are subjected to further reaction, thus creating regions which are chemically and physically different; this difference enables further processing and lithography of exposed regions and / or non-exposed regions and lithography in pursuit of the ultimate fabricated microelectronic device.

The present invention discloses a device for coating the inner surface of a multi-cell pure niobium cavity with a niobium-tin film. The device comprises: an external vacuum system for providing temperature and vacuum conditions for the niobium-tin film, comprising an external vacuum chamber of a vacuum furnace and an external chamber vacuum system for providing a vacuum environment within the external vacuum chamber; an internal vacuum system for providing a clean growth environment for the niobium-tin film, comprising a pure niobium chamber of the vacuum furnace and an internal chamber vacuum system for providing a vacuum environment within the pure niobium chamber; a pure niobium chamber disposed within the external vacuum chamber for accommodating a multi-cell niobium chamber and a tin source evaporation chamber, the tin source evaporation chamber being fixed at both ends of the multi-cell niobium chamber and serving as a container for the tin source; a niobium chamber conveying device for conveying the multi-cell niobium chamber into the internal vacuum chamber; a heating power supply system for providing heat for the niobium-tin film deposition process; and an electrical automatic control system for controlling the niobium-tin film deposition process, collecting various parameters of the deposition process, and providing analytical feedback. The present invention facilitates and uniforms film deposition.

Precursors useful in the formation of tin-containing films are provided. The precursors comprise a functionalized tin compound in which one or more ligands are coordinated to Sn, and the Sn is functionalized with at least one functional group. Methods for forming the precursors and methods for forming tin-containing films using the precursors are further provided.