89 results about "Tin thin films" patented technology

The invention discloses a magnetic filtration TiAlN/TiN thin film on the surface of tool and die material and a preparation method thereof. A layer of magnetic filtration TiN thin film is firstly plated on the surface of the tool and die material by adopting a magnetic filter, then a layer of magnetic filtration TiAlN thin film is plated, and the total thickness of double layers of thin films is 1 to 4 Mu m. The magnetic filtration TiAlN/TiN thin film has short preparation time, low cost and good wear resistance, is beneficial to prolonging the service life of the tool and die; and the processing quality of the plated film is high, the preparation technique is simple, the operation is easy and the plating process adopts electrical and mechanical automatic control.

The invention discloses a spraying method for a large-area double-sided and fluorine-doped tin oxide transparent conductive film. In the spraying method, a large amount of fog drops containing a fluorine-doped tin oxide precursor spraying liquid are sprayed into a coating chamber by adopting a spraying pyrolysis preparation technology; the fog drops are driven by an exhaust fan to regularly and directionally move; under the action of high temperature, the fog drops are subjected to solvent volatilization, a thermal decompose reaction of solute and the like and then uniformly form nucleuses and grow on the front side and the back side of a vertically-arranged glass matrix to form the fluorine-doped tin oxide film; residual waste gas is exhausted from an exhaust system; and finally, the prepared double-sided and fluorine-doped tin oxide film is cooled under strong wind to finish the preparation process of the film. The double-sided and fluorine-doped tin oxide film prepared by the method has the advantages of low cost, small pollution to a film surface, high transmissivity of visible light and infrared reflectivity and favorable conduction performance; meanwhile, since the spraying pyrolysis preparation technology is adopted, the process is simple and feasible, the preparation efficiency of the film is high and the film can be prepared in double sides and a large area.

Disclosed is a preparation method for a stannous oxide thin film. The preparation method comprises the steps of providing a substrate and a tin oxide target, wherein the tin oxide target comprises elementary substances of Sn and SnO<2> which are uniformly mixed, and atomic ratio of Sn atoms to O atoms in the tin oxide target is greater than 1 to 2 and less than or equal to 2 to 1; enabling the substrate and the tin oxide target to be arranged oppositely at intervals; and depositing the stannous oxide thin film on the substrate by adopting a magnetron sputtering method.

The invention discloses a welding substrate for an electronic product. The welding substrate comprises a base plate, wherein the base plate is provided with a metallized graph layer, the metallized graph layer is provided with a gold-tin film layer, a barrier layer is arranged between the gold-tin film layer and the metallized graph layer and is a single metal film layer or a composite metal film layer, and the gold-tin film layer is a gold-tin alloy layer or is of a multi-layer structure formed by alternately compounding gold layers and tin layers. With the adoption of the film substrate, the graph line accuracy is high, the surface smoothness of the film layer is good, a chip can be directly welded and located without needing to precasting solders, the installation and locating accuracy of the chip can be ensured, and the film substrate is suitable for photoelectric products of high-power LED (light-Emitting Diode) optical communication and the like. Meanwhile, according to the film substrate disclosed by the invention, the proper component proportion of gold and tin in the film substrate can be adopted according to different chips needed to be welded on the underlay film substrate, so that the welding performance of the chips is better.

To provide a target device that can easily be reused in which the amount of gas discharge is small. The present invention is a target device including a backing plate and a target plate that is fixed to the backing plate with a metal brazing material, in which a protective film made of a TiN thin film in which a proportion of (111) plane is at a maximum is formed on an exposed portion of the backing plate. The discharge amount of gas is small, and the brazing material that adheres when fixing the target plate can be easily peeled off.

The invention discloses a method for plating a triniobium stannide film on the inner surface of a pure niobium cavity and a vacuum furnace. The vacuum furnace is characterized by including a double vacuum structure consisting of an external vacuum system and an internal vacuum system, wherein the external vacuum system is internally provided with a heater heating the internal vacuum system and a temperature measuring probe used for measuring the temperature of a set area of the internal vacuum system; and the internal vacuum system is internally provided with a niobium cavity hoisting device,the rotating hoisting device is used for connecting the niobium cavity to be plated with a film and a stannum crucible, and the niobium cavity is rotated circularly through a transmission mechanism. Through the vacuum furnace, the pure niobium cavity can be internally plated with a layer of pure, completely-covering and evenly-distributed triniobium stannide film, and thus application of triniobium stannide to a superconducting cavity is achieved.

The invention discloses a single-layer tin disulfide thin film and a two-dimensional heterojunction and a preparation method thereof. Stannous sulfide powder and sulfur powder are used as raw materials, a large-area single-layer tin disulfide semiconductor thin film is prepared and generated on a graphene substrate by using a chemical vapor deposition method, and a novel two-dimensional vertical heterostructure is constructed. The single-layer tin disulfide film prepared by the method is flat in structure and uniform in thickness, and the size can be effectively controlled by changing processconditions; the two-dimensional heterojunction is formed by the single-layer tin disulfide thin film and a graphene film with the single atomic layer thickness, so that the structural characteristicsof a material system can be improved, and the single-layer tin disulfide thin film can be applied to a micro-nano optoelectronic device.

A solar cell structure and manufacture method thereof, using C60(OH)24 as n type material of hetero-junction, the conjugate conducting polymer PEDOT being p type material of hetero-junction, the two materials are polymerized into blended alloplasm tunica conjunctiva with single wall carbon nano-tube as anodic on the glass plate with indium oxide stannous thin film, aluminum film is as cathode; the method for manufacturing is: first the C60 with 99.5% purity is added into the mix solution of concentrated nitric acid and concentrated sulfuric acid for activating under ultrasonic oscillation, then NaOH water solution is added for reaching pH 7, evaporating solvent to obtain water-solubility crystal C60(OH)24; a glass plate coating with indium oxide tin thin film is cleaned in acetone by ultrasonic;single wall nano carbon tube is purified by the oxidation process of concentrated nitric acid and concentrated sulfuric acid; the water solution made by C60(OH)24, PEDOT and single wall carbon nano-tube under ultrasonic oscillation is coated on the indium oxide tin thin film, drying 45 minutes under 120 EDG C forming blended alloplasm tunica conjunctiva.

The invention relates to a method for manufacturing thin film solar cell ID (identification) by using a laser edge deletion device, belonging to the technical field of thin film solar cells. The technical scheme of the invention comprises the following steps: carrying out edge insulation on the cell by using the laser edge deletion device; carrying out edge insulation in designed regions in advance; carrying out ID preparation according to a designedly reserved region, wherein the reserved region is outside an effective region of the thin film solar cell and can not affect the performances and appearance of the cell; and using the laser edge deletion device to prepare the ID in the region reserved in advance. The method provided by the invention is compatible with an existing production preparation process of the thin film solar cell without using a device specially used for ID marking, thus the input cost of devices can be greatly reduced; the method is applied to a series of silicon-based thin film cells, a series of cadmium telluride thin film cells, a series of copper indium gallium tin thin film cells or organic compound material thin film cells and the like; and the method has the simple manufacturing process, is easy to operate and control and can be utilized to effectively improve the work efficiency.

The invention discloses a preparation method of a GaN-based HEMT gold-free ohmic contact electrode based on TiN. The method comprises the following steps: photolithography forming a source-drain electrode pattern; Surface treatment of GaN-based epitaxy at source-drain electrode pattern; Depositing a metal layer without a gold source drain electrode, and stripping to form a source drain electrode;GaN-based HEMT deposited with source and drain electrodes was annealed to form gold-free source and drain ohmic contact electrodes. A low-temperature magnetron sputter TiN film is adopted, TiN was recrystallized and reacted with other electrode metals by post-annealing alloys, The conductivity of low-temperature sputtered TiN is greatly improved and the process of preparing TiN thin film at high temperature is avoided, which is beneficial to reduce the process temperature, simplify the process flow, improve the process compatibility and reduce the manufacturing cost of a GaN-based HEMT device.

The invention belongs to the technical field of semiconductors, and particularly relates to a copper-connection structure and a manufacturing method of the copper-connection structure. Based on an original copper-connection structure, a double-layer Ru/TiAlN structure is used as a diffusion impervious layer/adhesion layer/seed crystal layer structure. The manufacturing method includes the particular steps that an atomic layer deposition method is adopted, a TiAlN thin film is firstly deposited on an insulating medium layer, a Ru thin film is then deposited, and finally electrocoppering is directly carried out to obtain the copper-connection structure. As Al is added in the TiAlN thin film, the amorphous TiAlN thin film can be obtained, and the Cu diffusion impervious performance better than that of a TiN thin film can be obtained. According to the copper-connection structure, the amorphous TiAlN thin film with high density is used, channels, such as crystal boundaries, for rapid diffusion do not exist, the ideal diffusion impervious performance and the ideal heat stability are provided, and a practical and reliable scheme is provided for the copper-connection technology of 22nm and smaller-than-22nm technological nodes.

The invention discloses a small modulation period Ti/TiN superhard nanometer multilayer film prepared by multi-arc ion plating. A preparation method of the film comprises the steps that a titanium metal deposition target is placed in a chamber in one direction; a hard alloy and a single-side polished single crystalline silicon wafer are used as a sample substrate for the growth of the thin film; air inside the chamber is extracted, and thus the inner part of the chamber is in a vacuum state; under the vacuum state, the inner part of the chamber is heated, argon gas above the purity threshold is injected, and glow discharge cleaning is conducted in the first time period; the flow of the argon gas is reduced to the first flow rate; the titanium metal deposition target is opened, and in the second time period, the sample substrate is bombarded and cleaned under negative bias pressure; and a titanium layer with a first deposition thickness is deposited in advance as a transition layer, theargon gas and nitrogen gas are correspondingly and periodically injected into the chamber, a titanium substratum and a titanium nitride substratum are alternately deposited to form the small modulation period Ti/TiN superhard nanometer multilayer film prepared by multi-arc ion plating. The service life of products produced based on the TiN thin film is prolonged.

The present invention generally relates to a method for depositing a metallic nitride series thin film, typically a TiN-series thin film. The TiN-series thin film according to the present invention is formed by a CVD, and contains Ti, O and N to have a higher barrier characteristic than those of conventional TiN thin films, so that TiN-series thin film can suitably used as a barrier layer. In addition, a TiN-series thin film according to the present invention is formed by a CVD, and contains Ti, N and P to have a lower resistance than those of conventional TiN films, so that TiN-series thin film can suitably used as a barrier layer or a capacitor top electrode. Moreover, if a TiN-series thin film containing Ti, O, N and P is formed by a CVD, the TiN-series thin film can have both of a high barrier characteristic and a low resistance characteristic.

A method of rapidly forming a thin film of high quality through film formation by alternate feeding of raw gases. In particular, a method of forming a TiN thin film, comprising repeating operations including causing TiCl₄ gas as a raw gas to be adsorbed on a substrate or TiCl₄ molecules adsorbed on a substrate and feeding NH₃ gas as a reactant gas in a treating chamber so as to effect reaction of TiCl₄ and NH₃ leading to formation of a TiN film, which method further comprises an operation of, prior to the adsorption of TiCl₄ gas on the substrate, feeding reducing H₂ gas in the treating chamber (30) so as to change TiCl₄ to a state of enhanced likelihood of adsorption on the substrate (e.g., TiCl₃).

The invention discloses a bipolar resistive access memory and a preparation method thereof. The bipolar resistive access memory comprises an insulating substrate, an upper electrode film, a lower electrode film, wherein a resistive layer material is arranged between the upper electrode film and the lower electrode film. The bipolar resistive access memory is characterized in that the upper electrode film is a film made of one of platinum, copper or gold, the lower electrode film is a fluorine-doped tin oxide film, and the resistive layer material is an alpha-Fe2O3 polycrystalline film; and the structure of the memory is made of Pt or Cu or Au/alpha-Fe2O3/FTO. The bipolar resistive access memory has the advantages of small size, simple structure, no volatilization, quick read-write availability, low working voltage, low energy-consumption, no moving part, no destructive read out and the like.

The invention discloses a cadmium telluride thin film solar cell module and a preparation method thereof. The cadmium telluride thin film solar cell module comprises a substrate glass layer, a TCO thin film layer, a CdS thin film layer, a CdTe thin film layer, a diffusion barrier layer, a Mo electrode layer, and a backplane glass layer which are arranged in order from bottom to top. The diffusionbarrier layer is a TiN layer. A TiN thin film is used as a back electrode buffer layer instead of Cu. Since the work function of the TiN is 4.7eV and the work function can be deepened by adjusting theratio of Ti to N, the Schottky barrier of the metal back electrode and the cadmium telluride thin film can be reduced, and the contact between the metal back electrode and the cadmium telluride thinfilm can be optimized. In addition, the TiN layer has good stability and has a stopping effect on Na diffusion in the glass, so that the diffusion of the alkali metal Na in the cadmium telluride thinfilm cell is controllable, and is different from the diffusion of doped copper which may diffuse to an interface between the cadmium telluride and the cadmium sulfide in a late stage, destroys a p-n junction characteristics, and greatly reduces efficiency, thereby prolonging a service life.

The invention discloses a TiN/Ti/Si/Ti multi-layer wear-resistant corrosion-resistant thin film material and a preparation method thereof. A thin film has a 4-layer structure, and from the surface of a substrate material to the surface of the multi-layer thin film, the multi-layer thin film is successively composed of a Ti layer, an amorphous Si layer, a dense Ti layer and a TiN layer. The thin film simultaneously has the hardness of more than 10 GPa and good corrosion-resistant and protection performance. Through addition of the amorphous Si layer and the dense Ti layer, formation of needle holes, micro-cracks and other structural defects penetrating through the multi-layer thin film is avoided, and the shortcomings of poor corrosion-resistant and protection performance of a traditional TiN thin film are better solved. The multi-layer thin film is suitable for wear resistance, corrosion resistance and protection of the surface of the substrate material easy to rust. At the same time, the thin film is also suitable for use in salt fog, high temperature and high humidity and other environmental conditions easily causing corrosion infringement.