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Copper-connection structure and manufacturing method of copper-connection structure

A copper interconnect structure and copper electroplating technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, electrical solid-state devices, etc., can solve problems such as poor surface adhesion, unsuitable diffusion barrier layers, etc., to improve performance and reliability. , Improve diffusion barrier ability and thermal stability, high quality effect

Inactive Publication Date: 2014-03-26
FUDAN UNIV
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Problems solved by technology

However, a pure Ru film is not suitable as a diffusion barrier, because the pure Ru film is a polycrystalline columnar structure, and its grain boundaries provide a path for the short-range diffusion of Cu.
At the same time, the adhesion of Ru thin film on the surface of silicon dioxide and low dielectric constant materials is relatively poor.

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  • Copper-connection structure and manufacturing method of copper-connection structure
  • Copper-connection structure and manufacturing method of copper-connection structure
  • Copper-connection structure and manufacturing method of copper-connection structure

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[0022] Further detailed description will be made below in conjunction with the accompanying drawings and specific embodiments. In the drawings, for the convenience of description, the thicknesses of layers and regions are enlarged and reduced, and the sizes shown do not represent actual sizes. The same reference numerals represent the same components , its repeated description will be omitted.

[0023] The Ru / TiAlN diffusion barrier layer proposed by the present invention and its preparation method are applicable to the copper interconnection technology of various semiconductor integrated circuits. What is described below is the process flow of an embodiment of the Ru / TiAlN diffusion barrier layer prepared by the present invention .

[0024] First, on the Si(100) substrate 101, the standard CMOS process is used to complete the cleaning of the silicon wafer. The specific process mainly includes: using a mixed solution of sulfuric acid and hydrogen peroxide, standard cleaning SC...

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Abstract

The invention belongs to the technical field of semiconductors, and particularly relates to a copper-connection structure and a manufacturing method of the copper-connection structure. Based on an original copper-connection structure, a double-layer Ru / TiAlN structure is used as a diffusion impervious layer / adhesion layer / seed crystal layer structure. The manufacturing method includes the particular steps that an atomic layer deposition method is adopted, a TiAlN thin film is firstly deposited on an insulating medium layer, a Ru thin film is then deposited, and finally electrocoppering is directly carried out to obtain the copper-connection structure. As Al is added in the TiAlN thin film, the amorphous TiAlN thin film can be obtained, and the Cu diffusion impervious performance better than that of a TiN thin film can be obtained. According to the copper-connection structure, the amorphous TiAlN thin film with high density is used, channels, such as crystal boundaries, for rapid diffusion do not exist, the ideal diffusion impervious performance and the ideal heat stability are provided, and a practical and reliable scheme is provided for the copper-connection technology of 22nm and smaller-than-22nm technological nodes.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to an integrated circuit copper interconnection structure and a preparation method thereof. Background technique [0002] With the continuous development of integrated circuit technology, the feature size of semiconductor devices and circuits continues to shrink, and interconnection delay replaces device gate delay as the main factor restricting the further improvement of IC speed. Looking for conductive materials and dielectric constants with lower resistivity Lower dielectric materials have become a major development direction of VLSI technology. Cu has gradually become the most widely used interconnect material due to its lower resistivity, higher electromigration resistance and higher thermal conductivity than Al. However, Cu diffuses very quickly in Si and oxides, and once Cu enters it, it will form deep-level impurities, which have a strong trap effect on t...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/768H01L23/532
CPCH01L23/53233H01L21/76838H01L23/5329
Inventor 卢红亮朱尚斌张卫
Owner FUDAN UNIV
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