Method for depositing metallic nitride series thin film

a technology of metallic nitride and thin film, which is applied in the direction of coatings, solid-state devices, chemical vapor deposition coatings, etc., can solve the problems of deteriorating electrical characteristics, particularly severe design rules, and down and high density integration of devices
US20050089634A1Inactive Publication Date: 2005-04-28OTSUKI HAYASHI
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Patent Information

Authority / Receiving Office
US · United States
Patent Type
Applications(United States)
Current Assignee / Owner
OTSUKI HAYASHI
Publication Date
2005-04-28
Estimated Expiration
Not applicable · inactive patent

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Abstract

The present invention generally relates to a method for depositing a metallic nitride series thin film, typically a TiN-series thin film. The TiN-series thin film according to the present invention is formed by a CVD, and contains Ti, O and N to have a higher barrier characteristic than those of conventional TiN thin films, so that TiN-series thin film can suitably used as a barrier layer. In addition, a TiN-series thin film according to the present invention is formed by a CVD, and contains Ti, N and P to have a lower resistance than those of conventional TiN films, so that TiN-series thin film can suitably used as a barrier layer or a capacitor top electrode. Moreover, if a TiN-series thin film containing Ti, O, N and P is formed by a CVD, the TiN-series thin film can have both of a high barrier characteristic and a low resistance characteristic.
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Description

CROSS REFERENCE TO RELATED APPLICATION

[0001] This is a continuation-in-part application of patent application Ser. No. 09 / 660,546 filed on Sep. 12, 2000, now abandoned.BACKGROUND OF THE INVENTION

[0002] 1. Field of the Invention

[0003] The present invention relates generally to a method for depositing a metallic nitride series thin film, typically a TiN-series thin film, which is used as, e.g., a barrier layer, a capacitor top electrode, a gate electrode or a contact part, in a semiconductor device.

[0004] 2. Description of the Related Art

[0005] In the production of semiconductor devices, the construction of circuits tends to have a multilayer metallization structure on a recent demand for higher density and higher density integration. Therefore, an embedding technique for electrical connections between layers, such as a contact hole which is a connecting part between a bottom semiconductor device layer and a top wiring layer, and a via hole which is a connecting part between top ...

Claims

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