Nitride-based semiconductor substrate and method of making the same

Abstract

The present invention provides a nitride-based semiconductor substrate having a small light absorption coefficient and high transparency, and capable of securing sufficient electroconductivity, and its manufacture method. After forming a GaN film 12 and a Ti film 13 on a sapphire substrate 11, the substrate is heated in a mixed atmosphere of a hydrogen gas and an ammonia gas to convert the Ti film into a porous TiN thin film 14, then a facet-grown GaN 15 is formed on the porous TiN thin film 14, the GaN crystal is grown so that the thickness of GaN layer in the initial growth stage growing while forming facet faces other than c face becomes less than 30% of total thickness of the finally grown GaN layer to obtain a GaN thick film 17, and peeling the GaN thich film from the sapphire substrate 11 through voids 16.

Description

technical field

[0001] The present invention relates to a nitride-based semiconductor substrate and a method for manufacturing the same, and more particularly, to a nitride-based semiconductor substrate capable of ensuring sufficient electrical conductivity with a small light absorption coefficient and high transparency, and a method for manufacturing the same. Background technique

[0002] GaN-based compound semiconductors such as gallium nitride (GaN), indium gallium nitride (InGaN), and aluminum gallium nitride (AlGaN) are attracting attention as materials for blue light-emitting diodes (LEDs) and laser diodes (LDs). In addition, taking advantage of the excellent heat resistance and environmental resistance, the development of components for electronic devices is also beginning.

[0003] As a substrate for growing a CaN-based compound semiconductor, a single crystal sapphire substrate has hitherto been used.

[0004] However, due to the difference in lattice constant bet...

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