The invention discloses a stannous
sulfide and
indium sulfide thin film solar cell and a preparation method thereof. The stannous
sulfide and
indium sulfide
thin film solar cell sequentially comprises a base 1, a
metal nanowire 2, an N type beta-
indium sulfide window layer 3, a
molybdenum disulfide buffer layer 4, a P type stannous sulfide
absorption layer 5 and a
metal electrode 6 from bottom to top. The stannous sulfide and indium sulfide
thin film solar cell has the advantages that firstly characteristics of energy gaps of stannous sulfide,
molybdenum disulfide and beta-indium sulfide are fully utilized, and stannous sulfide,
molybdenum disulfide and beta-indium sulfide are respectively used as the
absorption layer, buffer layer and window layer of the
solar cell, so that full absorption of
sunlight is benefited; secondly, the characteristic that stannous sulfide,
molybdenum disulfide and beta-indium sulfide belong to sulfides is utilized, and lattice mismatching among stannous sulfide, and
molybdenum disulfide and beta-indium sulfide is reduced, so that defect
state density is reduced, recombination of
photon-generated carriers is reduced, and transmission of the carriers is benefited; and thirdly, the
metal nanowire is used for replacing the traditional conductive thin film,
film resistance is greatly reduced, lateral collection of the carriers is benefited, and
photoelectric conversion efficiency of the
solar cell is greatly improved.