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Stannous sulfide and indium sulfide thin film solar cell and preparation method thereof

A technology of solar cells and tin sulfide, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of high cost and fragility of ITO

Inactive Publication Date: 2016-06-08
HUNAN NORMAL UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The electrode material usually used in organic solar cells is tin-doped indium oxide (ITO), however, the high cost and fragility of ITO have stimulated people's interest in the development of flexible, low-cost conductive materials

Method used

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  • Stannous sulfide and indium sulfide thin film solar cell and preparation method thereof

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Embodiment 1

[0020] First, copper nanowires were deposited on a glass substrate by direct current electrochemical deposition, and the electrolyte was composed of copper sulfate (CuSO 4 ) (90g / L) and boric acid (H 3 BO 3 ) (45g / L) aqueous solution, then add 1M sulfuric acid (H 2 SO 4 ) solution to adjust the pH to be PH=2.5. Electrodeposition conditions are: applied DC voltage 0.2V, deposition temperature is 25°C (room temperature), and deposition time is 90 minutes; Deposition β—In 2 S 3 film. The sputtering power is 120W, the vulcanization heat treatment temperature is 450°C, the sputtering gas pressure is 0.5Pa, and the sputtering time is 6min; thirdly, in a vacuum environment, using molybdenum metal particles and sulfur powder as raw materials, using the dual-source evaporation method In β-In 2 S 3 Molybdenum disulfide (MoS) deposited on the film 2 ) film, by adjusting the size of the electron beam for molybdenum metal evaporation, the temperature of sulfur powder evaporation,...

Embodiment 2

[0022] First, silver metal nanowires were deposited on a silicon wafer substrate by direct current electrochemical deposition. The electrolyte consists of silver nitrate (AgNO 3 ) (45g / L) and boric acid (H 3 BO 3 ) (45g / L) aqueous solution, then add 1M nitric acid (HNO 3 ) solution adjustment pH value is PH=2.3. The electrodeposition conditions are: an external DC voltage of 0.2V, a deposition temperature of 25°C (room temperature), and a deposition time of 30 minutes; second, the deposition of N-type β-In on silver metal nanowires by ultrasonic spraying 2 S 3 Thin film, using indium chloride (InCl 3 4H 2 O) and thiourea as indium (In) source and sulfur (S) source, prepare 50ml solution according to In / S molar concentration ratio 1:5, take the molar concentration of In ion as 60mmol / L, atomize through piezoelectric ceramic chip The prepared solution is atomized by the device, the atomization rate is 100ml / h, the flow rate of high-purity nitrogen gas is controlled at 5L / ...

Embodiment 3

[0024] First, nickel metal nanowires were deposited on organic flexible plastic substrates by direct current electrochemical deposition. The electrolyte is nickel sulfate (NiSO 4 ·6H 2 O) (100g / L), nickel chloride (NiCl 2 ·6H 2 O) (20g / L) and H3 BO 3 (45g / L) aqueous solution, then add 1M H 2 SO 4 The pH of the solution was adjusted to PH=2.5. Electrodeposition conditions are: DC voltage 0.2V applied, deposition temperature 25°C (room temperature), and deposition time 240 minutes; secondly, magnetron sputtering is used to prefabricate In thin film and vulcanization heat treatment process to deposit β— In 2 S 3 film. The sputtering power is 120W, the vulcanization heat treatment temperature is 450°C, the sputtering gas pressure is 0.5Pa, and the sputtering time is 6min; thirdly, in a vacuum environment, using molybdenum metal particles and sulfur powder as raw materials, using the dual-source evaporation method In N-type β-In 2 S 3 Depositing MoS on thin films 2 Thi...

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Abstract

The invention discloses a stannous sulfide and indium sulfide thin film solar cell and a preparation method thereof. The stannous sulfide and indium sulfide thin film solar cell sequentially comprises a base 1, a metal nanowire 2, an N type beta-indium sulfide window layer 3, a molybdenum disulfide buffer layer 4, a P type stannous sulfide absorption layer 5 and a metal electrode 6 from bottom to top. The stannous sulfide and indium sulfide thin film solar cell has the advantages that firstly characteristics of energy gaps of stannous sulfide, molybdenum disulfide and beta-indium sulfide are fully utilized, and stannous sulfide, molybdenum disulfide and beta-indium sulfide are respectively used as the absorption layer, buffer layer and window layer of the solar cell, so that full absorption of sunlight is benefited; secondly, the characteristic that stannous sulfide, molybdenum disulfide and beta-indium sulfide belong to sulfides is utilized, and lattice mismatching among stannous sulfide, and molybdenum disulfide and beta-indium sulfide is reduced, so that defect state density is reduced, recombination of photon-generated carriers is reduced, and transmission of the carriers is benefited; and thirdly, the metal nanowire is used for replacing the traditional conductive thin film, film resistance is greatly reduced, lateral collection of the carriers is benefited, and photoelectric conversion efficiency of the solar cell is greatly improved.

Description

technical field [0001] The invention relates to the field of new energy, in particular to a tin sulfide and indium sulfide thin-film solar cell and a preparation method thereof. Background technique [0002] As a new material with abundant raw materials, safety, non-toxicity and low price, stannous sulfide has huge potential application prospects and has always been a research hotspot for scientific researchers. Its optical direct bandgap and indirect bandgap are 1.2~1.5eV and 1.0~1.1eV respectively, which has a good spectral match with the visible light in solar radiation, and is very suitable as a light-absorbing material for solar cells, and is also a very promising Potential solar cell materials. Indium sulfide (In 2 S 3 ) is a III-VI compound semiconductor with special photoelectric and photoluminescent properties, and has great potential application value in the fields of fuel cells, electrochemical sensors and photoelectric functional materials. Studies have shown...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0296H01L31/0352H01L31/18
CPCH01L31/02966H01L31/035227H01L31/1828Y02E10/543Y02P70/50
Inventor 罗云荣陈慧敏陈春玲周如意
Owner HUNAN NORMAL UNIVERSITY
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