Single-layer tin disulfide thin film and two-dimensional heterojunction and preparation method thereof
Patent Information
- Authority / Receiving Office
- CN Β· China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- XIAMEN UNIV
- Publication Date
- 2020-05-05
- Estimated Expiration
- Not applicable Β· inactive patent
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Abstract
Description
technical field
[0001] The invention belongs to the field of semiconductors and their manufacture, and in particular relates to a single-layer tin disulfide thin film, a two-dimensional heterojunction and a preparation method thereof. Background technique
[0002] Graphene-like two-dimensional materials, such as transition metal chalcogenides, IIIA-VA, IVA-VIA compounds, etc., have been widely studied due to their tunable bandgap and potential applications in catalysis, electronics, optoelectronics, etc. focus on. Two-dimensional heterostructure materials, by stacking and arranging different two-dimensional materials in a certain order in a manner similar to Lego bricks, use the weak interaction between layers to realize the regulation and improvement of the properties of two-dimensional materials. This kind of two-dimensional heterostructure system with new physical and chemical properties is a hot spot in international scientific research. However, it is quite difficult ...