182results about How to "Precise control of ingredients" patented technology

The invention discloses a preparation method for a nano-cobalt/graphene core-shell structured electrocatalyst, relates to the preparation method for the electrocatalyst, and aims to solve the problems of high cost, poor stability, short service life, complex preparation process, more influence factors and poor repeatability of the existing fuel cell noble metal catalyst. The preparation method comprises the steps of 1, preparing a foamed nickel substrate; 2, preparing a deep red clear solution; 3, preparing a foamed nickel substrate after reaction; 4, preparing a sheet-shaped cobalt oxide precursor; 5, putting the sheet-shaped cobalt oxide precursor into a plasma-enhanced chemical vapor deposition vacuum apparatus, and heating at certain intensity of pressure in hydrogen and argon atmosphere; and 6, pumping a carbon source gas, and performing depositing at certain radio frequency power, intensity of pressure and temperature to obtain the nano-cobalt/graphene core-shell structured electrocatalyst. The invention discloses the preparation method for the nano-cobalt/graphene core-shell structured electrocatalyst.

The invention relates to a preparation method of an SiC/C-AlPO4-mullite antioxidation coating for a C/C composite material, which comprises the following steps: mixing silicon powder and graphite powder to obtain powder A; mixing Al2O3 powder, WO3 powder and B2O3 powder to obtain powder B; mixing the powder A and the powder B to obtain embedded powder C; putting a sample in a graphite crucible, adding the embedded powder C, putting the graphite crucible in a vertical vacuum furnace, heating to react while introducing argon as a protective atmosphere, cooling to room temperature, and cleaning with anhydrous alcohol in ultrasonic waves to obtain a silicon carbide transition layer for the C/C composite material; adding the C-AlPO4 and the mullite powder into methanol, adding iodine to obtain a suspension, and putting the suspension in a hydrothermal kettle, wherein the cathode adopts the C/C composite material with the silicon carbide transition layer; and sealing the hydrothermal kettle, putting the hydrothermal kettle in an ultrasonic-microwave generator, depositing, taking out the sample, and drying to obtain the SiC/C-AlPO4-mullite antioxidation coating for the C/C composite material. The composite coating can protect the C/C composite material at 1500 DEG C in static air for 322 hours, and the oxidative weight loss is less than 2%.

The invention discloses a method for melting manganese-copper alloy through a vacuum induction furnace and belongs to the technical field of copper alloy. The method comprises the following steps that (1) nickel, iron, copper and other pure metal and part of electrolytic manganese are fed along with the furnace; (2) the furnace is vacuumized firstly and then powered on to be heated; (3) after the alloy in the furnace becomes red hot, electrolytic manganese is fed in batches; (4) after all alloy is added, vacuumizing is stopped, and argon is introduced to achieve the shield atmosphere; (5) after the alloy melts through heating, argon bottom-blowing is carried out for stirring; and (6) the alloy is cast into a water-cooling ingot mold after the temperature is increased to 1050 DEG C. Volatilization of Mn and Cu is restrained by adding electrolytic manganese step by step to cool the metal and adopting the high-pressure argon shielding, so that constitution control is more accurate; by the adoption of argon bottom-blowing in the furnace, the problems that alloy slag melting is difficult and electrolytic manganese is prone to floating on a slag layer are solved; and by adopting the water-cooling copper ingot mold for casting, a shrinkage cavity of an ingot is reduced, and finally a manganese-copper alloy ingot uniform in texture and constitution is obtained.

The invention discloses a nuclear zirconium alloy cladding surface high temperature and corrosion resisting high-entropy alloy coating and a preparing method thereof. The high-entropy alloy coating deposited on the surface of a Zr alloy is a CrCuFeMoNi high-entropy alloy, and according to the atomic percents of Cr, Cu, Fe, Mo and Ni in the high-entropy alloy, Cr is 25%-35%, Cu is 20%-30%, Fe is 10%-14%, Mo is 15%-20%, and Ni is 15%-20%. The high-entropy alloy coating is deposited on the surface of the Zr alloy through the multi-target magnetron sputtering technology. According to the CrCuFeMoNi high-entropy alloy coating, the surface hardness of the Zr alloy is improved, corrosion resistance and radiation resistance are improved, good high-temperature resisting performance and corrosion resisting performance are shown, the actual engineering application can be achieved, and the CrCuFeMoNi high-entropy alloy coating is the potential alternative material for accident fault tolerance fuelcladding coatings. The adopted multi-target magnetron sputtering technology is mature, operation is simple, industrial production of the nuclear zirconium alloy cladding surface high temperature andcorrosion resisting high-entropy alloy coating to the engineering field can be achieved, and good development prospects are achieved.

The invention relates to a nano-crystal Mn-Zn ferrite magnetic material with high initial permeability and high thermal-magnetic sensitivity and a preparation method of the nano-crystal Mn-Zn ferrite magnetic material. When the Mn-Zn ferrite material is prepared, a raw material is composed of a main reactant and a precipitator, wherein the main reactant comprises the following components in percentage by weight: 68-72% of FeSO4, 8-15% of ZbSO4 and the balance of MnSO4; and the precipitator is hydrazine oxalate (H2C2O4N2H4.H2O). By using the preparation method, the initial permeability of the prepared Mn-Zn ferrite is up to 7500 at 25 DEG C, and the thermal-magnetic sensitivity of the prepared Mn-Zn ferrite is about 1 DEG C. the Mn-Zn ferrite prepared by the method can be widely applied to temperature detection and control systems such as household appliances, industrial machinery and the like.

The invention relates to a high-accuracy organic light-emitting device (OLED) component preparation device and method. The device comprises an evaporation source array, a substrate, a transmission device and a mask plate, and the mask plate is matched with the evaporation source array. A plurality of evaporation sources are arrayed to form the evaporation source array. Materials in the evaporation sources are evaporated vertically upwards to the substrate. Evaporating-plating of the substrate is completed due to the fact that the substrate or the evaporation source array are driven by the transmission device to move, so that an OLED component is formed. According to the high-accuracy OLED component preparation device and method, the distance between the substrate and the mask plate is enlarged, and the influence exerted on evaporating-plating by the mask plate is reduced; the distances between the substrate and the evaporation sources are reduced, so that the evaporation materials are less diffused into the evaporating environment, and the evaporation materials are saved; and in addition, the intervals between every two evaporation sources are reduced, the intervals between every two holes in the mask plate are reduced, the point-to-point evaporation is achieved, the number of subpixels within a unit area is increased, and the preparation of the OLED component with high accuracy is achieved.

The invention provides a thin film material for a phase change memory and a preparation method thereof. The thin film material is a material composed of three elements, namely copper, stibium and tellurium, and a general formula of the material is CuxSbyTez, in which x is greater than 0 and less than or equal to 40, y is greater than or equal to 15 and less than or equal to 85, and z is greater than or equal to 15 and less than or equal to 85. According to the material provided by the invention, different crystallization temperatures, melting points and crystallization rates can be obtained by adjusting contents of the three elements in the material, so that the element ratio of the copper to the stibium to the tellurium is properly adjusted to obtain a higher crystallization temperature, a better thermal stability, a lower melting point and a higher crystallization rate compared with the traditional Ge2Sb2Te5(GST). Moreover, copper interconnection is a mainstream interconnection technology in the current oversized-scale integrated circuit, and the processing technology of the Cu element becomes more mature through the extensive use of the interconnection technology, and therefore, the Cu-Sb-Te phase change material provided by the invention is easy to process and has good compatibility with a COMS (Complementary Metal Oxide Semiconductor).

The invention belongs to the field of biomaterials, and particularly relates to a metal organic framework/electrospinning fiber composite having NO and copper ion slow release synergistic reactions, and a preparation method and application. According to the material, a patterning structure is formed through mutual interweaving of fibers having a core shell structure, hydrophobic biomaterials are used as a core layer of the core shell fibers, hydrophilic biomaterials are used as a shell layer of the core shell fibers, and NO loaded copper bases MOF coat the core layer. The preparation method comprises the steps of using a patterned receiving template, dispersing the NO loaded copper bases MOF, enabling an organic solvent in which the hydrophobic biomaterials dissolve to communicate with aninternal needle of a coaxial electrostatic spray head, enabling an organic solvent in which the hydrophilic biomaterials dissolve to communicate with an external needle of the coaxial electrostatic spray head, and preparing the metal organic framework/electrospinning fiber composite through coaxial electrostatic spinning. In order to solve the problems that the wound healing rate of diabetes is low and angiogenesis is insufficient, the material slowly release NO and copper ions, and the NO and the copper ions are in synergistic reactions to jointly promote angiogenesis, collagen deposition, reduction of inflammatory reactions and the like in wound healing, so that the healing period of the wound of the diabetes is greatly shortened.

The invention discloses an organic solar cell with an exciton blocking and sunlight sensitivity enhancing integrated type hole transport layer and a preparation method of the organic solar cell. The organic solar cell comprises a substrate, a transparent electrode, a hole injection layer, an exciton blocking layer, a donor layer, a receptor layer, an electronic transmitting layer and a negative electrode. The organic solar cell is characterized in that the exciton blocking layer can effectively block electrons at a positive electrode end through material matching, and dark current components and electron leakage currents of a photovoltaic cell are reduced; ultraviolet light in sunlight can be absorbed for emitting pure blue light or sky blue light, and the number of incidence photons of an active layer of the subsequent organic solar cell is increased. Photo-generated currents are increased for improving the power conversion efficiency of a photovoltaic cell. The organic solar cell achieves dual functions of exciton blocking and sunlight enhancing at the same time through a simple method without other additional optical design or complex processes. The organic solar cell is simple in preparation process, low in device requirement and suitable for mass production.

The invention relates to a silicon carbide and silicon particle reinforced aluminum-copper based composite material and a preparation method thereof, and belongs to the field of the particle reinforced metal based composite material. The composite material is composed of the components by the weight percentage: 15-25 wt.% of silicon carbide, 45-50 wt.% of silicon and 25-40wt.% of an aluminum-copper alloy; the silicon carbide and silicon particles as a reinforcement phase are uniformly distributed in the aluminum-copper alloy matrix, and the aluminum-copper alloy matrix forms a three-dimensional reticular structure. A powder metallurgy method is used for preparation. The obtained aluminum based composite material has uniform structure, is fully dense, has the comprehensive performance of light weight, low expansion, high modulus, high strength, resistance to space radiation environment, easy processing and the like, is suitable for use in space environments, and can be used as related component materials in the aviation and aerospace fields.

The invention provides a 3D printing light-cured ceramic particle and a preparation method thereof. The 3D printing photocuring ceramic particle comprises a ceramic matrix; wherein the surface of theceramic matrix is coated with a coating layer; and the coating layer is a sintering aid layer, and the sintering aid layer coats the ceramic matrix according to the decreasing order of the refractiveindexes of the sintering aid components. The 3D printing light-cured ceramic particle is prepared by a precipitation method, the thickness and components of the coating layer can be accurately controlled, and meanwhile, a proper coloring agent is added to adjust the light absorption coefficient, so that the 3D printing light-cured ceramic particle is more suitable for the requirements of a ceramiclight-cured molding technology.

The invention relates to an ultra-pure smelting process of TiNi shape memory alloy, in particular to an ultra-pure smelting process used in TiNi shape memory alloy. As the TiNi shape memory alloy is a material which highly demands the accuracy of components, wherein the change of the Ni content can lead to the change of transformation temperature of 10 to 20 DEG C, the content of foreign matters should be controlled as 0<500ppmN<30ppm, thereby the material can have the perfect super-elasticity, and the accurate transformation temperature can be achieved according to the components.

The invention provides a Ge-Sb-Se phase-change material, a phase-change memory unit, and a preparation method for the Ge-Sb-Se phase-change material. The Ge-Sb-Se phase-change material is a phase-change material which comprises three types of elements: Ge, Sb, and Se. The chemical formula of the Ge-Sb-Se phase-change material is GexSbySez, wherein 20<=x<=50, 30<=y<=70, 5<=z<=25, and x+y+z=100. A memory material with different crystallization temperatures, different resistivity and different crystallization activation energy can be obtained through the adjustment of three types of elements of the Ge-Sb-Se phase-change material. Moreover, the phase-change materials in the system are big in difference before and after a phase change, are stronger in adjustability, and provide specific performance according to the actual needs. Compared with conventional Ge2Sb2Te5, the Ge-Sb-Se phase-change material provided by the invention is better in thermal stability, and is stronger in data holding capability, and is higher in crystallization speed. The preparation method for the Ge-Sb-Se phase-change material is simple in technology, and facilitates the precise control of material components.

The invention discloses an ultrafast synthetic method of a Ag2X block thermoelectric material. The ultrafast synthetic method is characterized in that Ag and an X elementary substance are taken as raw materials, high pressure is applied at the normal temperature after the raw materials are mixed uniformly, the mixed materials react and are densified by one step, and the Ag2X block thermoelectric material is prepared, wherein X is Se or Te. The densities of Ag2Se and Ag2Te blocks prepared by the ultrafast synthetic method are above 97%; the relevant preparation time is short, and a technology is simple; in addition, the problem of element volatilization in high-temperature synthetic processes of selenide and telluride is solved; accurate control on components and a microstructure is realized; the thermoelectric properties of obtained products are superior to those of products prepared by the traditional preparation method; ZTmax of obtained Ag2Se is equal to 0.65@107 DEG; ZTmax of obtained Ag2Te is equal to 0.7@127 DEG; and the ultrafast synthetic method lays a good foundation for large-scale preparation and large-scale application of Ag2Seand Ag2Te thermoelectric materials.