Organic solar cell with exciton blocking and sunlight sensitivity enhancing integrated type hole transport layer and preparation method of organic solar cell
A hole transport layer and solar cell technology, applied in the field of green solar energy, can solve the problems of mismatch of injection and transmission rates, many unclear mechanisms, low short-circuit current, etc., so as to reduce the dark current component and electron leakage current, The effect of balancing transport properties and preventing exciton quenching
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[0042] Example one:
[0043] In this embodiment, see figure 1 , An organic solar cell with an integrated hole transport layer for exciton blocking and solar sensitization. From bottom to top, it consists of substrate layer 1, transparent conductive anode layer 2, hole injection layer 3, exciton blocking layer 4. The donor layer 5, the acceptor layer 6, the electron transport layer 7 and the electrode cathode layer 8 are combined with a total of 8 functional layers. The donor layer 5 is made of narrow-band organic solar cell materials with strong absorption. The acceptor layer 6 is made of fullerene, the material of the exciton blocking layer 4 is a wide band gap hole transport material with ultraviolet absorption and almost no visible light absorption, and the energy level of the exciton blocking layer 4 is the same as the energy level of the donor layer 5. match.
[0044] In this embodiment, an ITO substrate composed of a substrate layer 1 and a transparent conductive anode laye...
Example Embodiment
[0047] Embodiment two:
[0048] This embodiment is basically the same as the first embodiment, and the special features are:
[0049] In this embodiment, see figure 1 , Choose a transparent ITO glass substrate etched into a certain template as the anode, and the thickness of the ITO glass substrate is 150nm. Use lotion, acetone, deionized water, and isopropanol to clean ultrasonically for 20 minutes, dry with nitrogen, and UV / O 3 Process for 15 minutes for backup. The hole injection layer MoO is deposited on the ITO glass substrate by vacuum evaporation 3 , The thickness is 10nm, then the exciton blocking layer BSB-Cz is deposited, the thickness is controlled at 8-20nm, and then the donor SubPc is deposited with the thickness of 7-20nm and the acceptor layer C 60 , The thickness is 30-50nm, the electron transport layer material Bphen is deposited again, the thickness is 5-10nm, and then the mask plate is replaced to vapor-deposit the cathode metal, and the vapor-deposited metal A...
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