Ge-Sb-Se phase-change material, phase-change memory unit, and preparation method for Ge-Sb-Se phase-change material

Abstract

The invention provides a Ge-Sb-Se phase-change material, a phase-change memory unit, and a preparation method for the Ge-Sb-Se phase-change material. The Ge-Sb-Se phase-change material is a phase-change material which comprises three types of elements: Ge, Sb, and Se. The chemical formula of the Ge-Sb-Se phase-change material is GexSbySez, wherein 20<=x<=50, 30<=y<=70, 5<=z<=25, and x+y+z=100. A memory material with different crystallization temperatures, different resistivity and different crystallization activation energy can be obtained through the adjustment of three types of elements of the Ge-Sb-Se phase-change material. Moreover, the phase-change materials in the system are big in difference before and after a phase change, are stronger in adjustability, and provide specific performance according to the actual needs. Compared with conventional Ge2Sb2Te5, the Ge-Sb-Se phase-change material provided by the invention is better in thermal stability, and is stronger in data holding capability, and is higher in crystallization speed. The preparation method for the Ge-Sb-Se phase-change material is simple in technology, and facilitates the precise control of material components.

Description

Technical field [0001] The invention relates to a Ge-Sb-Se phase change material in the field of microelectronics technology and a preparation method thereof, in particular to a Ge-Sb-Se phase change material, a phase change memory unit and a preparation method thereof. Background technique [0002] Phase change memory (PCM) is a non-volatile semiconductor memory with rapid technological development in recent years. Compared with traditional memory, it has the advantages of strong size shrinkage, fast read and write speed, low power consumption, long cycle life and excellent radiation resistance. Therefore, phase change memory has become a strong competitor in various new storage technologies, and is extremely expected to replace flash memory (Flash technology) as the mainstream storage technology for next-generation non-volatile memories, and thus has a broad market prospect. At the same time, it can produce new applications in some areas that ordinary memory cannot reach, such...

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Problems solved by technology

[0004] In view of the shortcomings of the prior art described above, the object of the present invention is to provide a Ge-Sb-Se phase change material, a phase change memory unit and a preparation method thereof, which are used to solve the problem of Ge in the prior art. 2 Sb 2 Te 5 The crystallization temperature of the phase change material is low, the thermal stability is not good, the data retention cannot be guaranteed, and it faces the problem of data loss and the low speed of the phase change, which cannot meet the speed requirements of the dynamic random access memory.

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