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Small modulation period Ti/TiN superhard nanometer multilayer film prepared by multi-arc ion plating

A multi-arc ion plating, modulation cycle technology, applied in the direction of ion implantation plating, coating, sputtering plating, etc., can solve the problem of short service life, etc. Effect

Active Publication Date: 2019-03-08
SHANDONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The purpose of the present invention is to provide multi-arc ion plating to prepare Ti / TiN superhard nano-multilayer film with small modulation period, so as to solve the problem of short service life of products made based on TiN film

Method used

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  • Small modulation period Ti/TiN superhard nanometer multilayer film prepared by multi-arc ion plating
  • Small modulation period Ti/TiN superhard nanometer multilayer film prepared by multi-arc ion plating
  • Small modulation period Ti/TiN superhard nanometer multilayer film prepared by multi-arc ion plating

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preparation example Construction

[0040] figure 2 The flow chart of the preparation method for the multi-arc ion plating provided by the present invention to prepare the small modulation period Ti / TiN superhard nano-multilayer film, as figure 2 As shown, a preparation method of multi-arc ion plating to prepare small modulation period Ti / TiN superhard nano-multilayer film, comprising:

[0041] Step 201: placing a titanium metal deposition target unidirectionally inside the cavity.

[0042] The invention adopts multi-arc ion plating technology to prepare Ti / TiN nanometer multilayer films with different modulation periods. Two circular Ti metal deposition targets with a purity of 99.99% are used, placed in one direction, the center distance between the upper and lower targets is 250mm, and the arc current is 70-75A.

[0043] Step 202: Use cemented carbide and single-sided polished single-crystal silicon wafers as sample substrates for film growth.

[0044] Cemented carbide and single-sided polished single-crys...

Embodiment 1

[0061] Two circular surface deposition targets with a purity of 99.99% were used, placed in one direction, the center distance between the upper and lower targets was 250mm, and the arc current was 70A. Cemented carbide and single-sided polished single-crystal silicon (100) slices were selected as substrates for film growth, and the substrate of cemented carbide was a block of 15×15×4 mm, which was ground and polished on the LCZMP-2 automatic metallographic sample grinding and polishing machine to The surface roughness is R a ≈0.8 μm. The samples were ultrasonically cleaned for 10 min in deionized water, acetone and absolute ethanol in sequence, dried and put into the chamber. During the preparation process, the revolution of the workbench is 10r / min. Before the experiment, the vacuum degree of the cavity was evacuated to 2×10 -2 Pa, preheat to 300°C, first pass high-purity argon gas at 150cm3 / min, glow discharge to clean the substrate for 10-15min, and reduce the flow rate...

Embodiment 2

[0063] Two circular surface deposition targets with a purity of 99.99% were used, placed in one direction, the center distance between the upper and lower targets was 250mm, and the arc current was 70A. Cemented carbide and single-sided polished single-crystal silicon (100) slices were selected as substrates for film growth, and the substrate of cemented carbide was a block of 15×15×4 mm, which was ground and polished on the LCZMP-2 automatic metallographic sample grinding and polishing machine to The surface roughness is R a ≈0.8 μm. The samples were ultrasonically cleaned for 10 min in deionized water, acetone and absolute ethanol in sequence, dried and put into the chamber. During the preparation process, the revolution of the workbench is 10r / min. Before the experiment, the vacuum degree of the cavity was evacuated to 2×10 -2 Pa, preheated to 300 ° C, first pass high-purity argon 150cm 3 / min, the substrate is cleaned by glow discharge for 10-15min, and the argon gas f...

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Abstract

The invention discloses a small modulation period Ti / TiN superhard nanometer multilayer film prepared by multi-arc ion plating. A preparation method of the film comprises the steps that a titanium metal deposition target is placed in a chamber in one direction; a hard alloy and a single-side polished single crystalline silicon wafer are used as a sample substrate for the growth of the thin film; air inside the chamber is extracted, and thus the inner part of the chamber is in a vacuum state; under the vacuum state, the inner part of the chamber is heated, argon gas above the purity threshold is injected, and glow discharge cleaning is conducted in the first time period; the flow of the argon gas is reduced to the first flow rate; the titanium metal deposition target is opened, and in the second time period, the sample substrate is bombarded and cleaned under negative bias pressure; and a titanium layer with a first deposition thickness is deposited in advance as a transition layer, theargon gas and nitrogen gas are correspondingly and periodically injected into the chamber, a titanium substratum and a titanium nitride substratum are alternately deposited to form the small modulation period Ti / TiN superhard nanometer multilayer film prepared by multi-arc ion plating. The service life of products produced based on the TiN thin film is prolonged.

Description

technical field [0001] The invention relates to the field of preparation of titanium nitride thin films, in particular to the preparation of small modulation period Ti / TiN superhard nano-multilayer films by multi-arc ion plating. Background technique [0002] Titanium Nitride (TiN) hard film has the advantages of high hardness, small friction coefficient, good wear resistance, light golden color, etc., and is often used as protective film and decorative film; such as in high-speed steel drill bit The TiN film coated on the surface can significantly improve the life of the drill bit; the surface of daily stainless steel items is coated with a TiN gold decorative coating. The preparation of TiN single-layer films by multi-arc ion plating technology is a common and mature technology, which has been widely used. However, with the development of modern industry, the hardness, adhesion, wear resistance and other aspects of TiN single-layer films The performance cannot meet the re...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/32C23C14/16C23C14/06
CPCC23C14/0021C23C14/0641C23C14/16C23C14/325
Inventor 孙珲郑小龙宋淑梅杨田林王宝铭王昆仑杨波波
Owner SHANDONG UNIV
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