Technique for magnetron sputtering TiN film on magnesium alloy surface

A magnetron sputtering, magnesium alloy technology, applied in metal material coating process, sputtering plating, ion implantation plating and other directions, to achieve the effect of good compactness, excellent wear resistance and controllable film thickness

Inactive Publication Date: 2009-03-18
SHANGHAI UNIV OF ENG SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Magnetron sputtering technology has now become one of the most important technologies in industrial coating production. It is especially suitable for the production of large-area coatings. Its most prominent advantages are stronger adhesion between the film and the substrate, and high film formation rate. , good uniformity, etc., but there is no report on the process of magnetron sputtering TiN film on the surface of magnesium alloy

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] Step A, pre-sputtering treatment

[0022] Grind the AZ91 magnesium alloy substrate of 25mm×25mm×3mm step by step with metallographic sandpaper to W04(04), then polish, after polishing, ultrasonically clean in absolute ethanol for 15min, dry in cold air, and set aside;

[0023] Step B. Install the substrate

[0024] Install the Ti target with a purity of 99.99%, a thickness of 3.8mm, and a diameter of Φ60 on the DC cathode target in the vacuum chamber of the magnetron sputtering equipment, and then install the magnesium alloy test piece on the sample table, and press it tightly to Anti-shedding;

[0025] Step C, sputtering film formation

[0026] (1) Place the metal Ti target on the DC cathode;

[0027] (2) Close the vacuum chamber, first use a mechanical pump to evacuate to 2Pa, and then use a molecular pump to evacuate to 3×10 -4 Pa;

[0028] (3) Reach 3×10 -4 After Pa vacuum degree, pass Ar gas and N 2 Gas mixture gas, where Ar gas partial pressure is 0.4Pa, N ...

Embodiment 2

[0034] Step A, pre-sputtering treatment

[0035] Described with embodiment 1.

[0036] Step B. Install the substrate

[0037] Described with embodiment 1.

[0038] Step C, sputtering film formation

[0039] (1) Place the metal Ti target on the DC cathode;

[0040] (2) Close the vacuum chamber, first use a mechanical pump to evacuate to 2Pa, and then use a molecular pump to evacuate to 4×10 -4 Pa;

[0041] (3) Reach 4×10 -4 After Pa vacuum degree, pass Ar gas and N 2 Gas mixture gas, where Ar gas partial pressure is 1.0Pa, N 2 The gas partial pressure is 0.08Pa;

[0042] (4) Rotate the sample stage so that the substrate corresponds to the Ti target;

[0043] (5) Perform reactive magnetron sputtering at 150°C, 90W power, 0.25KV voltage, and 0.36A current, and control the sputtering time to 2hr;

[0044] (6) A TiN film is obtained after sputtering, and the thickness of the film is about 3 μm.

[0045] The appearance of the obtained film is light yellow, and has good bo...

Embodiment 3

[0047] Step A, pre-sputtering treatment

[0048] Described with embodiment 1.

[0049] Step B. Install the substrate

[0050] Described with embodiment 1.

[0051] Step C, sputtering film formation

[0052] (1) Place the metal Ti target on the DC cathode;

[0053] (2) Close the vacuum chamber, first use a mechanical pump to evacuate to 2Pa, and then use a molecular pump to evacuate to 5×10 -4 Pa;

[0054] (3) Reach 5×10 -4 After Pa vacuum degree, pass Ar gas and N 2 gas mixture, where Ar gas partial pressure is 1.6Pa, N 2 The gas partial pressure is 0.8Pa;

[0055] (4) Rotate the sample stage so that the substrate corresponds to the Ti target;

[0056] (5) Perform reactive magnetron sputtering at 300°C, 150W power, 0.28KV voltage, and 0.54A current, and control the sputtering time to 4hr;

[0057] (6) A TiN film is obtained after sputtering, and the thickness of the film is about 6 μm.

[0058] The appearance of the obtained film is light yellow, and has good bondin...

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Abstract

The invention discloses a process for magnetron sputtering of a TiN thin-film on the surface of a magnesium alloy. The process comprises the steps of treating before sputtering, arranging a substrate and sputtering to form a film. Compared with the prior art, the process realizes the purpose of preparing the TiN thin-film on the surface of the magnesium alloy through magnetron sputtering process, and the TiN thin-film with the thickness between 0.2 and 6 mu m can be prepared under the groped processing condition, and the obtained thin-film is high in purity, good in compactness and good combining force with the substrate; the film thickness can be controlled and the thin-film with uniform thickness can be achieved in a large area of the substrate; and neutral salt spray corrosion to the treated magnesium alloy is not less than 24 hours, so that the wearing resistance is good.

Description

technical field [0001] The invention relates to a magnetron sputtering process, in particular to a process for magnetron sputtering a TiN thin film on the surface of a magnesium alloy, and belongs to the technical field of magnesium alloy surface treatment. Background technique [0002] Magnesium alloy is one of the lightest structural materials at present. It is called "the green engineering material of the 21st century". It has the characteristics of high specific strength, specific stiffness, good electrical conductivity, thermal conductivity, and electromagnetic shielding. The use of aerospace, automotive and 3C products is growing rapidly at a rate of more than 20% per year. However, the electrode potential of magnesium alloy is relatively negative, and it is a kind of metal that is easily corroded. In the solution, especially in the atmosphere or solution containing chloride, the magnesium alloy will be severely corroded, which cannot meet the needs of the use environ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/18C23C14/02C23C14/54
Inventor 刘继华钱士强林文松李曼萍
Owner SHANGHAI UNIV OF ENG SCI
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