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Process for the production of electronic parts

A method of supporting a semiconductor substrate according to the present invention can be applied to the step of processing the semiconductor substrate at a high temperature of 350° C. or higher, and there is provided a process for the production of electronic parts, comprising the steps of forming semiconductor circuits on one surface (surface A) of a semiconductor substrate (SEC) having a thickness of at least 0.2 mm, supporting the semiconductor substrate on a supporting substrate (BP) by bonding (AS) of said surface A to the supporting substrate (BP), grinding and polishing the exposed other surface (surface B) of the semiconductor substrate (SEC) by a physical method, a chemical method or a method of combination of these methods, to decrease the thickness of the semiconductor substrate (SEC) to less than 0.2 mm, forming semiconductor circuits in the polished surface, to obtain an electronic-circuits-possessing semiconductor substrate (PSE), and peeling (PS) the electronic-circuits-possessing semiconductor substrate (PSE) off from the supporting substrate (BP), wherein the step of grinding and polishing the surface B or the step of forming electronic parts in the surface B includes the step of processing the surface B at a high temperature of at least 350° C., and the bonding (AS) uses a heat-resistant thermoplastic (RF).
Owner:MITSUBISHI GAS CHEM CO INC
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