7 results about "Germane" patented technology

This invention belongs to the field of germane preparation technology, and provides a method and system for continuous production of germane. The invention involves mixing an alkali metal hydroxide, germanium dioxide, sodium borohydride, and water to form an alkaline feed solution. This alkaline feed solution is then added to a sulfuric acid solution, and the reaction is carried out under a protective atmosphere to obtain germane. The addition rate of the alkaline feed solution is 0.8~3.5 kg / h. This invention precisely controls the feed rate of the alkaline feed solution at 0.8~3.5 kg / h, thereby accurately controlling the reaction process, effectively removing the heat of reaction, successfully suppressing the rapid increase in temperature and pressure within the reaction system, and significantly reducing the occurrence of competing side reactions such as sodium borohydride hydrolysis. This improves the yield of germane synthesis while ensuring a smooth, efficient, and stable production process. This invention is a continuous process; for example, one batch can be produced in 12 hours, and two batches in 16 hours, greatly improving the synthesis efficiency of germane and making it suitable for industrial continuous production.

The present application relates to the technical field of emulsification mixing of germane special gas, in particular to an emulsification mixing system and mixing process for germane mixed gas, which comprises raw material pretreatment, multi-stage emulsification mixing, supercritical homogenization, precision metering, inert gas protection, online monitoring and self-adaptive adjustment units; the raw material pretreatment unit comprises a 13X-APG composite molecular sieve dehydrator and a gradient adsorption filter assembly, and the dehydration precision is less than or equal to 0.05 ppm; the multi-stage emulsification mixing unit has a three-stage series-parallel structure, and the first stage is an ultrasonic-microwave-plasma collaborative emulsifier; the supercritical homogenization unit comprises a double-path nano-dispersed enhancer injection assembly, and a fluorocarbon surfactant and amino-functionalized graphene quantum dot composite system are injected into the unit. The system improves the mixing uniformity through multi-stage collaborative mixing and supercritical homogenization, and guarantees the purity through deep pretreatment; the stability is ensured through self-adaptive adjustment and multi-dimensional monitoring, the energy consumption is low, the operation is safe, and the system is suitable for the large-scale production requirements of the semiconductor industry.

A method of manufacturing a semiconductor memory device includes the following steps. A plurality of container-type capacitors are formed on the substrate. The sacrificial dielectric material is etched between the container-type capacitors to remove it, thereby forming a gap between the container-type capacitors and exposing an upper electrode of each container-type capacitor. And the upper electrode of each container type capacitor is subjected to diborane treatment in the gaps. And depositing a silicon seed layer on the surface of the upper electrode in the gap. A boron-doped polysilicon germanium layer is deposited on the silicon seed layer within the gap using silane, germane, and diborane. According to the manufacturing method, before boron-doped polycrystalline silicon germanium is deposited by using silane, germane and diborane traditionally, the steps of diborane treatment and silicon seed layer deposition are added, so that the situation that an unfilled gap is generated in a high-aspect-ratio gap between high-aspect-ratio container type capacitors is avoided.

The invention relates to the field of special gas preparation, and mainly relates to a preparation method of ethyl germane, which comprises the following steps: generating GeH3 free radicals from germane under the action of electric field ionization, and then generating Ge2H6 through coupling of the GeH3 free radicals. According to the method, germane is changed into GeH3 free radicals, an e-free radical and an H free radical through ionization, then the free radicals are coupled to enable 2GeH3 to generate Ge2H6, and meanwhile, 2H free radicals generate H2, so that ethyl germane is obtained. In the preparation method disclosed by the invention, the conversion rate of the ethyl germane is high and is obviously improved compared with the conversion rate of the ethyl germane in the prior art, and the ethyl germane is generated by utilizing germane, so that the problem that a large amount of germane is generated along with generation of the ethyl germane is solved.

The invention provides a trihydrogermane, a dihydrogermane, a monohydrogermane, and a method for preparing the trihydrogermane, the dihydrogermane and the monohydrogermane. Germanium dichloride is used as an initial raw material, and is subjected to an insertion reaction with a carbon halogen bond of halogenated hydrocarbon, and then reduction treatment is performed, so that the trihydro germane compound is efficiently constructed. Further, coupling of an olefin precursor and a germanium source is realized based on a metal-free condition or a zirconium-catalyzed olefin hydrogen germanization reaction, so that dihydrogermane and monohydrogen germane compounds are synthesized. The germane compound obtained by the invention can be separated and purified by conventional means such as extraction, column chromatography and the like, is stable to air and humidity, and shows a good industrial application prospect.

The utility model relates to the technical field of germane gas, and provides a germane gas collecting system which can reduce the loss of germane products and enable germane to be separated more thoroughly. The system comprises a crude product gas conveying pipeline, an inert gas conveying pipeline, a gas collecting tank, a condensing tank, a product gas cylinder and a vacuum pump, the crude product gas conveying pipeline and the inert gas conveying pipeline are respectively communicated with a gas inlet of the gas collecting tank; a gas volume flow meter is arranged on the crude product gas conveying pipeline; the gas collecting tank is provided with a first freezing device; the gas collecting tank is provided with a pressure gauge; a gas outlet of the gas collection tank is communicated with a gas inlet of the condensation tank, the condensation tank is filled with a metal filler, a gas outlet of the condensation tank is communicated with a gas inlet of the product gas cylinder, and the gas outlet of the condensation tank is further communicated with the vacuum pump; the condensation tank is provided with a second freezing device; and each pipeline is provided with a valve.

Embodiments of the present disclosure generally relate to the field of semiconductor manufacturing processes, more particularly, to precursor chemistries and methods of depositing silicon-containing films for forming semiconductor devices. In one or more embodiments, a method includes co-flowing a silicon-containing precursor with a dopant precursor into a processing chamber at a temperature of 600 °C or less to deposit an epitaxial layer over a substrate disposed within the processing chamber. The silicon-containing precursor is selected from a list consisting of silane (SiH4), disilane (Si2H6), trisilane(Si3H8), tetrasilane (Si4H10), monochlorotrisilane (Si3H7CI), diiodosilane (SiH2l2), and dibromosilane (SiH2Br2). The dopant precursor selected from a list consisting of phosphine (PH3), phosphorus trichloride (PCI3), phosphorus tribromide (PBr3), tert-butylphosphine (TBP), tri-tert-butylborane ((tBu)3B), tert-butylarsine (TBAs), arsenic trichloride (AsCI3), trisilylphosphine (TSP), triisopropylborane (iPr)3B, tert-butylsilane ((tBu)SiH3), isopropylsilane ((iPr)SiH3), tetrakis(tert-butyl)tin ((tBu)4Sn), tetrakis(isopropyl)tin ((iPr)4Sn), tetrakis(tert-butyl)germane ((tBu)4Ge), tetrakis(isopropyl)germane ((iPr)4Ge), germanium tetrachloride (GeCI4), carbon tetrachloride (CCI4), and hexachlorodisilane (Si2CI6).