19 results about "Germane" patented technology

Described are storage and dispensing systems and related methods, for the storage and selective dispensing germane a reagent gas from a vessel in which the reagent gas is held in sorptive relationship to a solid adsorbent medium at an interior of a storage vessel and wherein the methods and dispensing systems provide dispensing of the reagent gas from the storage vessel with a reduced level of atmospheric impurities contained in the dispensed reagent gas.

The utility model relates to a system for treating tail gas produced during preparation of germane / silane in a liquid ammonia system. The system comprises an inert gas cylinder, an anti-suck-back tank and a tail gas absorption tank which are communicated through pipelines, a gas inlet of the tail gas absorption tank is communicated to a germane / silane tail gas outlet of a germane / silane synthesis device in the liquid ammonia system through an anti-suck-back tank; a top gas inlet of the anti-suck-back tank is connected to a germane / silane tail gas outlet of a germane / silane synthesis device in the liquid ammonia system, and a bottom gas outlet of the anti-suck-back tank is inserted into the bottom in the tail gas absorption tank from the top gas inlet of the tail gas absorption tank through a first pipeline; and the inert gas cylinder is connected to the gas inlet pipeline at the top of the suck-back prevention tank. The system is simple in structure, convenient to operate and high in germane / silane tail gas treatment efficiency, and can effectively prevent the suck-back of the absorption liquid and ensure that the germane / silane tail gas is discharged after reaching the standard after being treated.

The invention belongs to the technical field of organic electroluminescent materials, and provides an iridium-containing heterocyclic phosphorescent doping material and an organic electroluminescent device.The doping material has a compound general formula shown in the formula I. Quinoline and a naphthalene ring are connected through silane or germane, and a silicon or germanium six-membered heterocyclic structure is formed. And reacting with iridium metal and a diketone monomer to obtain the iridium metal heterocyclic phosphorescent organic light-emitting material. The heteroatom silicon or germanium in the material can adjust molecular orbital HOMO and LUMO energy levels, and the polarity effect of heteroatoms promotes electron migration, reduces interface potential barriers and electron injection barriers, reduces carrier injection loss and improves carrier mobility, so that driving voltage is reduced, and the external quantum efficiency of a device is improved. In addition, the silicon or germanium heterocyclic ring has better rigidity, so that the overall stability of the structure is enhanced, and the rigid structure can prolong the service life of the device.

The invention discloses an alkali washing tank and a process for producing high-purity germane by using the alkali washing tank, and relates to the technical field of alkali washing purification, the alkali washing tank comprises an alkali washing assembly, the alkali washing assembly comprises a tank body, a partition plate is fixed in the tank body, a one-way spray pipe is fixed on one side of the partition plate, a gas conveying sleeve is arranged in the tank body, and a gas conveying pipe and a gas collecting hood are embedded in the top of the tank body; the adjusting assembly is arranged at the top of the tank body and comprises a homogenizing part, the homogenizing part is located at the top of the tank body, and a conveying part is arranged on one side of the homogenizing part. The device has the beneficial effects that through the arrangement of the alkali washing assembly and the adjusting assembly, waste gas can flow into alkali liquor in a separated manner after an alkali washing reaction is carried out for a period of time; along with further alkali washing, alkali liquor is supplemented through the guide pipe, while the alkali liquor is supplemented, waste gas is still subjected to continuous purification reaction, the overall reaction rate is guaranteed, manual or electrical equipment intervention is not needed, and the actual use cost and the subsequent maintenance cost are effectively reduced.

The invention belongs to the technical field of organic synthesis, focuses on innovation of a preparation method of an organic germanium compound, and particularly provides a novel photochemical synthesis path of an alpha-germanium oxime compound. According to the method, germane hydride, olefin and tert-butyl nitrite are taken as starting raw materials, and under the condition that no photocatalyst is added, only an ultraviolet light source is utilized for irradiation, so that the germanium-based / oximido-based bifunctionalization reaction of olefin is successfully realized for the first time. The method has the advantages of environmental friendliness, mild conditions, simplicity and convenience in operation, high atom economy, wide substrate application range and the like. The method can be used for modifying the drug molecule derivative after germanium group / oximidation, opens up a way for constructing an organic germanium compound with potential biological activity and pharmacological action, and is expected to play an important role in the field of medicine research and development.

The invention belongs to the field of organic synthesis, and relates to preparation of organic germanium compounds, in particular to a visible light induced germanium alkylation synthesis method. According to the method, germane hydride and a hypervalent iodine reagent are taken as starting raw materials, and under the catalytic action of a photocatalyst 9, 10-phenanthrenequinone, a series of alkynyl, alkenyl, nitrile and phenyl germanes are synthesized. The reaction has the advantages of environmental friendliness, mild conditions, simplicity and convenience in operation, high atom / step economy, wide substrate application range and the like. By applying the method, the germanium-based post-modification of the drug molecule derivative can be realized, and a convenient means is provided for constructing an organic germanium compound which is unique in structure and has potential biological activity and pharmacological action.

This invention belongs to the field of germane preparation technology, and provides a method and system for continuous production of germane. The invention involves mixing an alkali metal hydroxide, germanium dioxide, sodium borohydride, and water to form an alkaline feed solution. This alkaline feed solution is then added to a sulfuric acid solution, and the reaction is carried out under a protective atmosphere to obtain germane. The addition rate of the alkaline feed solution is 0.8~3.5 kg / h. This invention precisely controls the feed rate of the alkaline feed solution at 0.8~3.5 kg / h, thereby accurately controlling the reaction process, effectively removing the heat of reaction, successfully suppressing the rapid increase in temperature and pressure within the reaction system, and significantly reducing the occurrence of competing side reactions such as sodium borohydride hydrolysis. This improves the yield of germane synthesis while ensuring a smooth, efficient, and stable production process. This invention is a continuous process; for example, one batch can be produced in 12 hours, and two batches in 16 hours, greatly improving the synthesis efficiency of germane and making it suitable for industrial continuous production.

The present application relates to the technical field of emulsification mixing of germane special gas, in particular to an emulsification mixing system and mixing process for germane mixed gas, which comprises raw material pretreatment, multi-stage emulsification mixing, supercritical homogenization, precision metering, inert gas protection, online monitoring and self-adaptive adjustment units; the raw material pretreatment unit comprises a 13X-APG composite molecular sieve dehydrator and a gradient adsorption filter assembly, and the dehydration precision is less than or equal to 0.05 ppm; the multi-stage emulsification mixing unit has a three-stage series-parallel structure, and the first stage is an ultrasonic-microwave-plasma collaborative emulsifier; the supercritical homogenization unit comprises a double-path nano-dispersed enhancer injection assembly, and a fluorocarbon surfactant and amino-functionalized graphene quantum dot composite system are injected into the unit. The system improves the mixing uniformity through multi-stage collaborative mixing and supercritical homogenization, and guarantees the purity through deep pretreatment; the stability is ensured through self-adaptive adjustment and multi-dimensional monitoring, the energy consumption is low, the operation is safe, and the system is suitable for the large-scale production requirements of the semiconductor industry.

A method of manufacturing a semiconductor memory device includes the following steps. A plurality of container-type capacitors are formed on the substrate. The sacrificial dielectric material is etched between the container-type capacitors to remove it, thereby forming a gap between the container-type capacitors and exposing an upper electrode of each container-type capacitor. And the upper electrode of each container type capacitor is subjected to diborane treatment in the gaps. And depositing a silicon seed layer on the surface of the upper electrode in the gap. A boron-doped polysilicon germanium layer is deposited on the silicon seed layer within the gap using silane, germane, and diborane. According to the manufacturing method, before boron-doped polycrystalline silicon germanium is deposited by using silane, germane and diborane traditionally, the steps of diborane treatment and silicon seed layer deposition are added, so that the situation that an unfilled gap is generated in a high-aspect-ratio gap between high-aspect-ratio container type capacitors is avoided.

The invention relates to the field of special gas preparation, and mainly relates to a preparation method of ethyl germane, which comprises the following steps: generating GeH3 free radicals from germane under the action of electric field ionization, and then generating Ge2H6 through coupling of the GeH3 free radicals. According to the method, germane is changed into GeH3 free radicals, an e-free radical and an H free radical through ionization, then the free radicals are coupled to enable 2GeH3 to generate Ge2H6, and meanwhile, 2H free radicals generate H2, so that ethyl germane is obtained. In the preparation method disclosed by the invention, the conversion rate of the ethyl germane is high and is obviously improved compared with the conversion rate of the ethyl germane in the prior art, and the ethyl germane is generated by utilizing germane, so that the problem that a large amount of germane is generated along with generation of the ethyl germane is solved.

The invention provides a trihydrogermane, a dihydrogermane, a monohydrogermane, and a method for preparing the trihydrogermane, the dihydrogermane and the monohydrogermane. Germanium dichloride is used as an initial raw material, and is subjected to an insertion reaction with a carbon halogen bond of halogenated hydrocarbon, and then reduction treatment is performed, so that the trihydro germane compound is efficiently constructed. Further, coupling of an olefin precursor and a germanium source is realized based on a metal-free condition or a zirconium-catalyzed olefin hydrogen germanization reaction, so that dihydrogermane and monohydrogen germane compounds are synthesized. The germane compound obtained by the invention can be separated and purified by conventional means such as extraction, column chromatography and the like, is stable to air and humidity, and shows a good industrial application prospect.

The utility model relates to the technical field of germane gas, and provides a germane gas collecting system which can reduce the loss of germane products and enable germane to be separated more thoroughly. The system comprises a crude product gas conveying pipeline, an inert gas conveying pipeline, a gas collecting tank, a condensing tank, a product gas cylinder and a vacuum pump, the crude product gas conveying pipeline and the inert gas conveying pipeline are respectively communicated with a gas inlet of the gas collecting tank; a gas volume flow meter is arranged on the crude product gas conveying pipeline; the gas collecting tank is provided with a first freezing device; the gas collecting tank is provided with a pressure gauge; a gas outlet of the gas collection tank is communicated with a gas inlet of the condensation tank, the condensation tank is filled with a metal filler, a gas outlet of the condensation tank is communicated with a gas inlet of the product gas cylinder, and the gas outlet of the condensation tank is further communicated with the vacuum pump; the condensation tank is provided with a second freezing device; and each pipeline is provided with a valve.

The application belongs to the technical field of organic electroluminescent materials, and provides an iridium metal heterocyclic phosphorescent doped material and an organic electroluminescent device, wherein the doped material has a compound general formula with a structure shown in formula I, a quinoline and a naphthalene ring are connected through silane or germane to form a silicon or germanium six-membered heterocyclic structure, then reacted with an iridium metal and a diketone monomer to obtain an iridium metal heterocyclic phosphorescent organic luminescent material. The heteroatom silicon or germanium in the material can adjust the molecular orbital HOMO and LUMO energy levels, meanwhile, the polarity of the heteroatom promotes electron migration, reduces the interface potential barrier and the electron injection barrier, reduces the carrier injection loss, and improves the carrier mobility, thereby reducing the driving voltage and improving the external quantum efficiency of the device. In addition, the silicon or germanium heterocycle has good rigidity, so that the overall stability of the structure is enhanced, and the rigid structure can prolong the service life of the device.

The system for continuously preparing germane comprises a feeding unit, a reaction unit, a separation unit and a collection unit, the feeding unit is communicated with an inert gas cylinder and a vacuum pump; the feeding unit comprises an alkali liquor feeding kettle and an acid liquor feeding kettle and is used for feeding an alkali solution and an acid solution of germanium dioxide and sodium borohydride; the reaction unit comprises a reaction kettle which is respectively connected with the two feeding kettles and is used for sequentially feeding an acid solution and an alkali solution to react to prepare germane and outputting germane crude product gas; the separation unit comprises an impurity removal tank, a copious cooling tank, an adsorption tank and a rectifying tower, the impurity removal tank is used for removing water and carbon dioxide from the germane crude product gas, the obtained primary treatment gas is subjected to copious cooling liquefaction through the copious cooling tank, and germane crude product liquid and secondary treatment gas are output; rectifying the obtained germane crude product liquid through a rectifying tower to remove impurities, and outputting germane product liquid; adsorbing and intercepting germane in the secondary treatment gas through an adsorption tank; the collecting unit comprises a collecting tank which is connected to a product liquid outlet of the rectifying tower. The system can be used for continuously preparing germane.

Described herein are storage and dispensing systems and related methods for selectively dispensing germane (GeH4) as a reagent gas from a vessel in which the germane is held in an adsorbed relationship with a solid adsorbent medium comprising a zeolitic imidazolate framework.

The invention relates to the technical field of organic synthesis, and discloses a chiral amide compound containing a silicon group or a germanium group and a synthesis method and application thereof.The chiral amide compound containing the silicon group or the germanium group is prepared by taking alpha, beta-unsaturated amide and silane or germane as raw materials, taking a complex formed by chiral amine oxide and metal salt as a Lewis acid catalyst and taking a quinone compound as a photocatalyst through a one-step reaction. The chiral amide compound containing the silicon group or the germanium group is obtained through a reaction in an organic solvent under the illumination condition, high-yield and high-enantioselectivity synthesis is achieved, and the effects of being simple, efficient, environmentally friendly and good in substrate universality are achieved. In addition, the chiral amide compound can also be used for further synthesizing various chiral drug intermediates such as chiral tropine acid, chiral 3-(dimethyl phenyl silyl)-2-phenyl-1-propanol, chiral 2-phenyl-1-propanol and the like, so that the chiral amide compound is wide in applicability.

A method for laterally etching an epitaxial layer, the method comprising: Forming (510) a plurality of fins (110, 115) on a substrate (160), each of the plurality of fins having a first width (125); Forming source / drain regions (120) on the plurality of fins, wherein the source / drain regions (120) are formed on two fins each, and wherein each source / drain region (120) has a second width (150) in a common direction with the first width and a height (155); selectively etching the source / drain regions (120) to reduce the second width of the source / drain regions (150); and Growing (530) an epitaxial depletion layer over the source / drain regions (120), wherein the selective etching comprises an in-situ etch with hydrochloric acid,HCl, germane,GeH4, and chlorine,Cl2, and wherein a flow rate for HCl is 40 to 1000 sccm, a flow rate for GeH4 is 0 to 1000 sccm, and a flow rate for Cl2 is 0 to 100 sccm.

Embodiments of the present disclosure generally relate to the field of semiconductor manufacturing processes, more particularly, to precursor chemistries and methods of depositing silicon-containing films for forming semiconductor devices. In one or more embodiments, a method includes co-flowing a silicon-containing precursor with a dopant precursor into a processing chamber at a temperature of 600 °C or less to deposit an epitaxial layer over a substrate disposed within the processing chamber. The silicon-containing precursor is selected from a list consisting of silane (SiH4), disilane (Si2H6), trisilane(Si3H8), tetrasilane (Si4H10), monochlorotrisilane (Si3H7CI), diiodosilane (SiH2l2), and dibromosilane (SiH2Br2). The dopant precursor selected from a list consisting of phosphine (PH3), phosphorus trichloride (PCI3), phosphorus tribromide (PBr3), tert-butylphosphine (TBP), tri-tert-butylborane ((tBu)3B), tert-butylarsine (TBAs), arsenic trichloride (AsCI3), trisilylphosphine (TSP), triisopropylborane (iPr)3B, tert-butylsilane ((tBu)SiH3), isopropylsilane ((iPr)SiH3), tetrakis(tert-butyl)tin ((tBu)4Sn), tetrakis(isopropyl)tin ((iPr)4Sn), tetrakis(tert-butyl)germane ((tBu)4Ge), tetrakis(isopropyl)germane ((iPr)4Ge), germanium tetrachloride (GeCI4), carbon tetrachloride (CCI4), and hexachlorodisilane (Si2CI6).

The invention belongs to the technical field of material preparation, and particularly relates to a preparation method and application of doped nano silicon. According to the method, argon is used for flushing and leak detection of a pyrolysis system, working gas is introduced into a plasma reactor to form stable high-temperature plasma, and cooling airflow is established; then silicon source gas and doping element gas (hydrogen phosphide, diborane, methylgermane and arsenic hydride) are mixed in proportion, and the mixture is injected into a plasma thermal field through a feeding probe to be decomposed; after the mixed gas is decomposed, the mixed gas respectively passes through a high-temperature cooling area and a low-temperature cooling area to generate doped nano silicon; the doped nano silicon enters the collecting chamber under the driving of the airflow and is adhered to the surface of the filter; and finally, the powder falls into a powder collecting tank through repeated back flushing of nitrogen, and doped nano silicon is obtained. Through an in-situ doping technology, atomic-scale uniform distribution of doping elements is realized. When being used as a lithium ion battery negative electrode material, the material has the characteristics of low expansion, high specific capacity, high coulombic efficiency and the like.