Preparation method for stannous oxide thin film

A stannous oxide and thin film technology, applied in the field of preparation of stannous oxide thin films, can solve the problems of low melting point, slow sputtering rate, sputtering power and substrate temperature limitation, etc., and achieve high sputtering stability and sputtering rate. quick effect

Inactive Publication Date: 2016-12-07
TSINGHUA UNIV +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, due to the low melting point of tin, when using Sn targets to prepare SnO films, the sputtering power and substrate temperature will be limited. When sputtering under high power conditions, the Sn targets will partially melt and flow, while The sputtering rate is slow when sputtering under low power conditions; in addition, when using the Sn target to prepare SnO thin films, the sputtering conditions must be strictly controlled, otherwise SnO 2 thin film instead of SnO thin film
When adopting SnO target material to prepare SnO film, because SnO target material resistivity is bigger, can only adopt the...

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  • Preparation method for stannous oxide thin film
  • Preparation method for stannous oxide thin film
  • Preparation method for stannous oxide thin film

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preparation example Construction

[0024] The embodiment of the present invention further provides a method for preparing the tin oxide target, including:

[0025] S11, provide Sn powder and SnO 2 powder;

[0026] S12, the Sn powder and SnO 2 Mixing the powders to obtain a mixture, the atomic ratio of Sn atoms to O atoms in the mixture is 1:2

[0027] S13, performing press molding and sintering on the mixture to obtain the tin oxide target, and the sintering is performed in an inert atmosphere.

[0028] In step S11, the Sn powder and SnO 2 The purity of the powder is preferably 3N (99.9% by mass) to 5N (99.999% by mass). The Sn powder and SnO 2 The mass ratio of the powders is regulated according to the atomic ratio of Sn atoms to O atoms in the mixture. In one embodiment, the Sn powder and SnO 2 The mass ratio of the powder is 0.4~1.2. At this time, the atomic ratio of Sn atoms to O atoms in the tin oxide target is 1.5:2≦Sn:O≦2.5:2.

[0029] In step S12, the Sn powder and SnO 2 The metho...

Embodiment 1

[0050] Weigh 240g of Sn powder with a purity of 5N, SnO 2 Powder 250g, put into the ball mill jar and mix. The ball milling medium is selected as absolute ethanol, the ball milling speed is 200 rpm, and the ball milling time is 10 h. After ball milling, dry under the protection of Ar gas with a pressure of 1 atm and a purity of 5N for 1 h. After sintering, the powder was put into a hot-pressed sintering furnace, and sintered in a high-purity Ar gas atmosphere with a sintering pressure of 50 MPa, a sintering temperature of 300 °C, a heating rate of 15 °C / min, and a sintering time of 4 h. After the sintering is completed, the tin oxide target is obtained by cooling to room temperature with the furnace. The density ratio of the tin oxide target is greater than 85%. The tin oxide target is used for magnetron sputtering, which has easy arc starting and stable sputtering. image 3 Shown is the XRD spectrum of the obtained target sample.

Embodiment 2

[0052] Weigh 160g of Sn powder with a purity of 5N, SnO 2 Powder 160g, put into ball mill jar and mix. The ball milling medium is selected as absolute ethanol, the ball milling speed is 400rpm, and the ball milling time is 20h. After ball milling, the powder was dried under atmospheric pressure for 1 h. The tin oxide target was prepared by constant pressure sintering, and the powder was put into a common press with a pressure of 70MPa and a holding time of 30min. Put it into the sintering furnace after demoulding, in high-purity N 2 The sintering was carried out in an air atmosphere, the sintering temperature was 400°C, the heating rate was 10ºC / min, and the sintering time was 8h. After sintering, the furnace was cooled to room temperature for sampling. The target density rate is greater than 80%. The tin oxide target is used for medium-frequency AC magnetron sputtering, and the arc is easy to start and the sputtering is stable.

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Abstract

Disclosed is a preparation method for a stannous oxide thin film. The preparation method comprises the steps of providing a substrate and a tin oxide target, wherein the tin oxide target comprises elementary substances of Sn and SnO<2> which are uniformly mixed, and atomic ratio of Sn atoms to O atoms in the tin oxide target is greater than 1 to 2 and less than or equal to 2 to 1; enabling the substrate and the tin oxide target to be arranged oppositely at intervals; and depositing the stannous oxide thin film on the substrate by adopting a magnetron sputtering method.

Description

technical field [0001] The invention belongs to the technical field of semiconductor display, and in particular relates to a preparation method of a tin oxide thin film. Background technique [0002] At present, n-type oxide thin film transistor (Thin Film Transitor, TFT) has made important progress. However, from the perspective of application, n-type TFT is prone to threshold voltage fluctuations caused by OLED voltage changes due to the definition of gate and source. , affecting the brightness stability of the OLED. The use of p-channel TFTs can effectively avoid this problem. At the same time, the work function of p-type semiconductors is generally relatively large, and its hole injection efficiency is higher, which is also very important for improving the luminous efficiency of OLEDs. However, there are still few p-type oxide TFT materials with high mobility. [0003] SnO (or tin monoxide, chemical formula SnO) is an important p-type semiconductor, widely used in lith...

Claims

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Application Information

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IPC IPC(8): H01L21/02
CPCC23C14/0036C23C14/3414C04B35/457C04B35/6261C04B35/6455C04B2235/40C04B2235/604C04B2235/6562C04B2235/661C04B2235/77H01J37/3429C23C14/35C23C14/5806C23C14/086H01L29/7869H10K2102/102
Inventor 庄大明赵明郭力曹明杰欧阳良琦张冷
Owner TSINGHUA UNIV
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