Method for preparing TiN through utilizing physical vapor deposition (PVD)

A technology of titanium nitride and wafers, applied in the field of PVD preparation of TiN thin films

Inactive Publication Date: 2014-01-29
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, as the size of the device continues to shrink, the demand for improving the carrier mobility in the channel region is increasing, and the above-mentioned traditional TiNx thin film preparation method and process parameter selection are difficult to meet the needs of further improving the driving capability of the device.

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  • Method for preparing TiN through utilizing physical vapor deposition (PVD)
  • Method for preparing TiN through utilizing physical vapor deposition (PVD)
  • Method for preparing TiN through utilizing physical vapor deposition (PVD)

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Embodiment Construction

[0017] The features and technical effects of the technical solution of the present invention will be described in detail below with reference to the accompanying drawings and in combination with schematic embodiments, and a method for preparing TiNx by PVD is disclosed. It should be pointed out that similar reference numerals represent similar structures, and the terms "first", "second", "upper", "lower" and the like used in this application can be used to modify various device structures or manufacturing processes . These modifications do not imply spatial, sequential or hierarchical relationships of the modified device structures or fabrication processes unless specifically stated.

[0018] In the present invention, general-purpose (magnetron) sputtering equipment can be used to complete the preparation of TiNx. It is worth noting that in the following text of this application, for the sake of simplicity, sometimes the nitride of titanium (titanium nitride) is referred to s...

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Abstract

Disclosed is a method for preparing TiN through PVD,comprising: in a vacuum environment inflated with nitrogen and a noble gas, making the noble gas to have glow discharge to form noble gas ions; nitridizing a chip surface and a Ti target surface by using the nitrogen; the noble gas ions bombarding the Ti target surface under electric field acceleration for sputtering TiN and Ti ions; the TiN depositing, under the action of the electric field, on the chip surface to form a TiN layer, and the Ti ions being incident on the chip surface to make the TiN layer to have a stress. The method is characterized in that: kinetic energy when the Ti ions are incident on the chip surface is increased to improve a non-crystallization rate of the TiN layer, thereby increasing the stress of the TiN layer. The method for preparing TiN through PVD according to the present invention improves kinetic energy when the Ti ions are incident on the chip surface by controlling process parameters to improve the non-crystallization rate of the TiN, thereby increasing the stress of the TiN thin film.

Description

technical field [0001] The invention relates to a method for manufacturing a semiconductor device, in particular to a method for preparing a TiN thin film by PVD. Background technique [0002] With the continuous development of large-scale integrated circuit technology and the continuous improvement of circuit integration, the feature size of MOSFET devices has reached the technical node below 22nm. In fact, after entering the 90nm technology node, it has become more and more difficult to simply reduce the gate length to meet the requirements of Moore's Law. Because with the shortening of the gate length, the channel doping scattering, strong field effect and parasitic resistance introduced by the channel heavy doping used to suppress the short channel effect increase, resulting in a decrease in the channel carrier mobility, which affects the The improvement of the electrical performance of the device. In this context, strain engineering emerged as the times require, and i...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/06C23C14/34
CPCC23C14/0641C23C14/0036H01L21/28088H01L21/2855H01L29/7845
Inventor 付作振殷华湘闫江
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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