The invention belongs to the technical field of
semiconductor material preparation, and particularly relates to a preparation method of a
tin-doped
gallium oxide single crystal material. The method comprises a
sintering process, a charging process, a
crystal growth process and a cooling process, the problems of volatilization and wrapping of
tin oxide, agglomeration of
powder and the like are solved to the greatest extent through a segmented
sintering process and control of optimized
doping components, uniform
solid solution of
tin elements in
gallium oxide crystal lattices is ensured, the stability of the
doping process is ensured, and the
doping efficiency is improved. And the quality and performance of the sintered body are improved. On the basis, by regulating and controlling
process conditions of a heating stage and a
crystal growth stage, concentration fluctuation at an interface is further inhibited, and melt
convection homogenization is promoted, so that the
solid solubility and distribution consistency of the
tin element in beta-Ga2O3 crystal lattices are improved, and the overall performance of the beta-Ga2O3
single crystal material is further improved; a high-quality and repeatable material basis is provided for subsequent device preparation, and the urgent demand of a power device and a deep
ultraviolet photoelectric device on the high-performance beta-Ga2O3
single crystal substrate is effectively met.