High-selectivity etching solution for aluminum nitride and silicon

A high-selectivity, etchant technology, applied in the field of electronic chemicals, can solve the problems of low etching rate, residual substrate silicon, and long process time, and achieve the effect of improving the etching selectivity ratio, protecting the substrate silicon, and reducing the etching rate

Active Publication Date: 2022-04-19
湖北兴福电子材料股份有限公司
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Problems solved by technology

However, the following problems exist in the current etching of aluminum nitride: the use of acidic etching solution to etch aluminum nitride, the etching process temperature is high, the etching rate is low, and the process time is long; the above problems can be avoided by using alkaline etching solution, but each of the alkaline etching solution Anisotropic etching can cause silicon nitride etch crystal residue and damage to the

Method used

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  • High-selectivity etching solution for aluminum nitride and silicon
  • High-selectivity etching solution for aluminum nitride and silicon
  • High-selectivity etching solution for aluminum nitride and silicon

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Embodiment 1-15 and comparative example 1-3

[0024] The content of each component according to the conceived examples and comparative examples of the present invention is listed in Table 1, and the balance is water.

[0025] Table 1

[0026]

[0027]

[0028]

[0029] A highly selective etchant for aluminum nitride and silicon was prepared and used in the following manner:

[0030] 1. According to the type and quantity of raw materials in the above table, take raw materials for later use;

[0031] 2. Add water, fluoride, silicate and organochlorosilane in turn to the lye;

[0032] 3. Stir the above mixed solution evenly and ultrasonically disperse it to make a highly selective etching solution for aluminum nitride and silicon;

[0033] 4. Cut the AlN and Si wafers into small pieces of 1*1cm, wash them with water and dry them with nitrogen, and then use an ellipsometer to measure the initial thickness of the two wafers;

[0034] 5. Heat the highly selective etching solution prepared in step 3 to 45°C in a wate...

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Abstract

The invention discloses a high-selectivity etching solution for aluminum nitride and silicon. The etching solution comprises the following main components in percentage by mass: 5-40% of alkali, 0.2-0.5% of fluoride, 0.1-0.5% of organochlorosilane, 1-5% of silicate and the balance of water. The etching solution can be used for quickly cleaning the aluminum nitride layer, no crystal lattice remains, and the selection ratio of the etching solution to the Si substrate can reach more than 1000.

Description

technical field [0001] The invention belongs to the field of electronic chemicals. Background technique [0002] Due to the wide bandgap, strong polarization and 6.2eV forbidden band width of AlN, the aluminum nitride thin film materials prepared by it have many excellent physical and chemical properties, such as high breakdown field strength, high thermal conductivity, high resistivity, high Chemical and thermal stability and good optical and mechanical properties. High-quality AlN film also has the characteristics of extremely high ultrasonic transmission speed, small acoustic loss, considerable piezoelectric coupling constant, and similar thermal expansion coefficient to Si and GaAs. The unique properties make it widely used in machinery, microelectronics, Optical and electronic components, surface acoustic wave device manufacturing and high-frequency broadband communication have broad application prospects. [0003] Because aluminum nitride thin film materials have exc...

Claims

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Application Information

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IPC IPC(8): C09K13/08H01L21/306
CPCC09K13/08H01L21/30612
Inventor 冯凯贺兆波王书萍张庭徐子豪班昌胜冯帆
Owner 湖北兴福电子材料股份有限公司
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