Method of forming a transistor
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- SEMICON MFG INT (SHANGHAI) CORP
- Publication Date
- 2017-08-25
Smart Images

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Figure 3
Abstract
Description
technical field
[0001] The invention relates to the field of semiconductors, in particular to a method for forming a transistor. Background technique
[0002] In the high-K dielectric / metal gate engineering of transistors, after high-temperature annealing for ion activation, dummy gates such as polysilicon gates need to be removed, and then filled with metal gate electrodes to form a high-K dielectric / metal gate structure.
[0003] refer to figure 1 and figure 2 , shows a method for forming a transistor in the prior art. Such as figure 1 As shown, the shallow trench isolation region 08 is formed in the substrate 01, the dummy gate structure of the NMOS transistor is formed on the left side of the shallow trench isolation region 08, and the dummy gate structure of the PMOS transistor is formed on the right side, and each dummy gate structure Including a gate dielectric layer 03, a capping layer 06, and a dummy gate 02, the sidewall of the dummy gate structure is also pro...