Method for quickly and freely depositing or etching atomic layer and chamber structure

Abstract

The invention belongs to the technical field of atomic layers, and provides a method for quickly and freely depositing or etching an atomic layer and a chamber construction.The chamber structure comprises a disc chamber, a plurality of source reaction chambers which are annularly arranged at equal intervals are arranged in the disc chamber, and transmission chambers are arranged outside the source reaction chambers; at least one substrate transmission device rotating around the circle center of the disc cavity is arranged in the middle of the disc cavity; according to the invention, the deposition or etching reaction is carried out through the rotary reciprocating motion of the substrate carrying transmission device, the deposition or etching rate is improved while the deposition or etching effect is ensured, and the deposition or etching efficiency can be improved by setting different cavity numbers and operation programs according to the types of deposition or etching materials. And automatic and intelligent deposition or etching of various materials is realized.

Description

technical field [0001] The invention belongs to the technical field of atomic layers, and in particular relates to a method for depositing or etching atomic layers quickly and freely and a chamber structure. Background technique [0002] ALD (Atomic layer deposition) is a method in which gas-phase precursors are alternately passed into the reactor, chemically adsorbed on the deposition substrate and reacted to form a deposited film. A method of layer-by-layer plating on the surface of a substrate, ALD is a true nanotechnology that achieves nano-scale ultra-thin film deposition in a precisely controlled manner. Since ALD utilizes the characteristics of saturated chemical adsorption, it can ensure that large High conformal uniform deposition of area, porous, tubular, powder or other complex-shaped substrates Remove material. [0003] However, in the prior art, deposition or etching reactions are often carried out in one reaction chamber, and the same gas pipeline is also use...

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Problems solved by technology

[0003] However, in the prior art, the deposition or etching reaction is often carried out in one reaction chamber, and the gas pipeline also uses the same pipeline, which can easily lead to mutual contamination of different precursor sources, and the input, discharge, blowing of precursor sources Scanning is done in the same chamber, resulting in slow growth or etching material

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