Positive electrode silver paste for back passivation silicon solar cell and preparation method thereof

A technology of silicon solar cells and positive electrodes, which is applied in the manufacture of cables/conductors, conductive materials dispersed in non-conductive inorganic materials, circuits, etc., can solve the problem of narrow low-temperature sintering window, reduced conversion efficiency, and affecting the etching effect of SiNx silver The quality of wire sintering and the formation of ohmic contacts can achieve the effects of ensuring etching ability, improving compactness, improving fluidity and wetting ability

Active Publication Date: 2017-09-22
GUANGDONG AIKO SOLAR ENERGY TECH CO LTD
View PDF3 Cites 31 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The low-temperature sintering window of the mainstream front-side silver paste in the existing market is narrow, and lowering the sintering temperature will affect the etching effect of the glass frit in the paste on SiNx, the sintering quality of the silver wire and the formation of ohmic contact, which will eventually reduce the conversion efficiency

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Positive electrode silver paste for back passivation silicon solar cell and preparation method thereof
  • Positive electrode silver paste for back passivation silicon solar cell and preparation method thereof
  • Positive electrode silver paste for back passivation silicon solar cell and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0045] In addition, the present invention also provides a preparation method of Pb-V-Te glass, comprising the following steps:

[0046] 1) According to the design ratio, PbO, V 2 o 5 , TeO 2 、 Bi 2 o 3 , B 2 o 3 、WO 3 and SiO 2 Mix the oxides evenly and put them in platinum crucibles;

[0047] 2) Put the platinum crucible with the above-mentioned oxide into a high-temperature sintering furnace, melt it at a temperature of 700°C-1000°C, and keep it warm for 0.5-2hrs to obtain a uniform molten glass;

[0048] 3) Quenching the molten glass by using a double-roller flaker to obtain glass shards with uniform thickness;

[0049] 4) Put the above-mentioned glass flakes into a planetary ball mill for ball milling to obtain Pb-V-Te glass powder with a particle size meeting the requirements. The median particle size D50 of the glass powder is distributed between 1 μm and 3 μm, and D100 is less than 10 μm.

[0050] In addition, the present invention also provides a preparation ...

Embodiment 1

[0064] Prepare glass powder, silver powder, and organic vehicle according to the proportions of the components in Table 1, and further mix them to obtain positive electrode silver paste, which is printed on the front surface of the Perc cell by screen printing, and after drying Dry sintering to obtain a positive electrode.

[0065] Table 1 embodiment one each component ratio

[0066]

Embodiment 2

[0068] Prepare glass powder, silver powder and organic vehicle according to the proportions of the components in Table 2, and further mix them to obtain positive electrode silver paste, which is printed on the front surface of the Perc cell by screen printing, and after drying Dry sintering to obtain a positive electrode.

[0069] Table 2 embodiment two each component ratio

[0070]

[0071]

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses positive electrode silver paste for a back passivation silicon solar cell and a preparation method thereof. The positive electrode silver paste comprises, in mass percent, 3%-15% of organic carriers, 80%-95% of silver powders and 1%-5% of inorganic glass materials. The inorganic glass materials are prepared by compounding Pb-V-Te glass and Bi-W-Si glass; and the silver powders are prepared by compounding first silver powders and second silver powders. Through introduction of nanometer silver powders, sintering activity of a silver powder system is improved, and compactness of silver grid lines under low-temperature sintering is improved; by adjusting softening temperature, viscosity and surface tension of the glass materials, liquidity and wetting ability of glass liquid are improved, etching capacity of the glass liquid to a front-surface antireflection layer is ensured and silver powder fusion and reprecipitation capability is improved; precipitation of silver nanometer colloid particles on the surface of a silicon wafer helps to promote the glass layer to form good ohmic contact with the silicon wafer, and thus conversion efficiency is improved; and through introduction of the second component glass powders, bonding strength between the glass layer and a silicon substrate is enhanced.

Description

technical field [0001] The invention relates to the field of electrode silver paste for silicon solar cells, in particular to a positive electrode silver paste for back passivated silicon solar cells (PERC) and a preparation method thereof. Background technique [0002] As a clean energy, solar energy plays an increasingly important role in the energy structure of human society. Compared with traditional fossil fuels, solar energy is inexhaustible and inexhaustible, and will not produce any environmental pollution during use. As a semiconductor device that uses solar energy to generate electricity, crystalline silicon solar cells are prepared by processes such as texturing, diffusion, etching, coating, printing electrodes, and sintering. Under the action, hole-electron pairs are formed, and under the influence of the built-in electric field, they flow to the p-region and n-region respectively, and a current is formed after the external load is connected. [0003] In recent...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01B1/16H01B1/22H01B13/00C03C12/00C03C8/24H01L31/0224
CPCC03C8/24C03C12/00H01B1/16H01B1/22H01B13/00H01L31/022425
Inventor 张楚鑫秦崇德方结彬何达能陈刚
Owner GUANGDONG AIKO SOLAR ENERGY TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products