Semiconductor structure, self-supporting gallium nitride layer and preparation method thereof

A gallium nitride layer and semiconductor technology, applied in semiconductor/solid-state device manufacturing, coating, final product manufacturing, etc., can solve problems such as affecting quality, dislocation inconsistency, and difficulty in meeting product performance requirements

Pending Publication Date: 2022-07-12
镓特半导体科技(上海)有限公司
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Problems solved by technology

[0004] However, this method tends to cause inconsistent dislocations above the opening and above the mask (such as the lateral closure) in the early stage of growth, which affects the improvement of quality, and the product performance is difficult to meet the requirements.

Method used

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  • Semiconductor structure, self-supporting gallium nitride layer and preparation method thereof
  • Semiconductor structure, self-supporting gallium nitride layer and preparation method thereof
  • Semiconductor structure, self-supporting gallium nitride layer and preparation method thereof

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Embodiment Construction

[0043] In order to facilitate understanding of the present application, the present application will be described more fully below with reference to the related drawings. Preferred embodiments of the present application are shown in the accompanying drawings. However, the application may be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.

[0044] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the technical field to which this application belongs. The terms used herein in the specification of the present application are for the purpose of describing specific embodiments only and are not intended to limit the present application.

[0045] It will be understood that when an element or layer is referred to as being on the surface of other element...

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Abstract

The invention relates to a semiconductor structure, a self-supporting gallium nitride layer and a preparation method of the self-supporting gallium nitride layer. Forming a patterned mask layer on the surface of the substrate; providing a hydride vapor phase epitaxy apparatus; placing the substrate on which the patterned mask layer is formed in a substrate region; providing a first reaction gas containing hydrogen chloride for the gallium boat region through a first gas supply pipeline, and providing a second reaction gas containing ammonia gas for the substrate region through a second gas supply pipeline to form a gallium nitride seed crystal layer; and stopping providing the first reaction gas to the gallium boat region, stopping providing the second reaction gas to the substrate region, and providing a third reaction gas containing hydrogen chloride to the substrate region through a third gas supply pipeline so as to completely remove the gallium nitride seed crystal layer in the crystal grain region, or the thickness of the gallium nitride seed layer in the grain area is smaller than that of the gallium nitride seed layer in the overgrowth area; and forming a thick-film gallium nitride layer. The method can save the raw material cost and improve the quality of the thick-film gallium nitride layer.

Description

technical field [0001] The present application relates to the field of semiconductor technology, and in particular, to a semiconductor structure, a self-supporting gallium nitride layer and a preparation method thereof. Background technique [0002] Compared with traditional substrate materials, gallium nitride has the advantages of large band gap, high breakdown voltage, high thermal conductivity, high electron saturation drift speed, strong radiation resistance and good chemical stability. The material system with the highest electro-optical and photoelectric conversion efficiency. [0003] Due to the difficulty in preparing gallium nitride single crystal substrates, gallium nitride single crystal substrates are generally prepared by the method of heteroepitaxial growth of gallium nitride materials on heterogeneous substrates such as sapphire, silicon carbide, silicon, and gallium arsenide. , and then peeled off from the foreign substrate by a peeling method to obtain a g...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02H01L21/683C23C16/01C23C16/04C23C16/30
CPCH01L21/0243H01L21/0254H01L21/02634H01L21/02664H01L21/6835C23C16/01C23C16/042C23C16/303H01L2221/68345H01L2221/68386Y02P70/50
Inventor 王颖慧罗晓菊葛文伟
Owner 镓特半导体科技(上海)有限公司
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