Etching fluid composition and etching method

A technology of etching solution and composition, applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of increased cost, reduced output, complicated processes, etc., and achieve the effect of efficient etching

Active Publication Date: 2013-05-29
HAYASHI PURE CHEM IND LTD
View PDF13 Cites 15 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0013] However, the above-mentioned dry etching method requires a process of forming an etching mask, and a special technique is required in the forming process of the etching mask, so there is a problem that the process is complicated, the yield is reduced, and the cost is increased.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Etching fluid composition and etching method
  • Etching fluid composition and etching method
  • Etching fluid composition and etching method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0069] Hereinafter, the present invention will be described more specifically by way of examples, but the present invention is not limited by these examples.

[0070] [Preparation of etching solution composition (sample)]

[0071] Prepare hydrochloric acid, phosphoric acid, acetic acid, lactic acid, sulfuric acid, hydrogen peroxide (H 2 o 2 ), ferric chloride, ferric sulfate, ferric nitrate, perfluoroalkyl amine oxide (amphoteric surfactant), perfluoroalkyl sulfonic acid (anionic surfactant) and other raw materials.

[0072] These raw materials were weighed to have the compositions shown in Table 1 and dissolved in water to prepare samples (etching liquid compositions) of sample numbers 1 to 15 in Table 1.

[0073] It should be noted that the samples of sample numbers 1 to 10 are samples of examples having the requirements of the present invention, and the samples of sample numbers 11 to 15 are samples of comparative examples not having the requirements of the present invent...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

A composition is adopted that includes an inorganic acid and a metal compound. The composition further includes an organic acid, an organic acid salt, an inorganic acid salt, or a surfactant. The composition further includes hydrochloric acid, phosphoric acid, sulfuric acid, or nitric acid, as the inorganic acid. Furthermore, an iron-based compound is used as the metal compound. At least one acid selected from a group comprising monocarboxylic acid, polycarboxylic acid, oxycarboxylic acid, phosphonic acid, sulfonic acid and salts thereof is used as the organic acid and the organic acid salt. Using the etching fluid composition according to the present invention, a semiconductor film of AlGaInP film, AlGaAs film or GaAsP film is etched, and the surface is made rough.

Description

technical field [0001] The present invention relates to an etching composition and an etching method using the same. Specifically, it relates to an etching solution for etching a semiconductor film used for the light extraction surface of a light emitting diode (hereinafter referred to as "LED") and its use. Its etching method. Background technique [0002] LEDs generally require high luminous efficiency. Furthermore, the luminous efficiency of LED is determined by the product of internal quantum efficiency and light extraction efficiency. Therefore, in order to increase the luminous efficiency, it is necessary to increase this value. [0003] Among them, as a technique for improving light extraction efficiency, a method of forming unevenness (roughening treatment) on the surface of a semiconductor film serving as a light extraction surface to suppress reflection of light and improve it has been proposed. [0004] In addition, in recent years, AlGaInP films have been used...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/308H01L33/22
CPCH01L33/22H01L33/0062H01L33/0095H01L21/306
Inventor 勇谦司木村真弓田湖次广
Owner HAYASHI PURE CHEM IND LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap