The application discloses a memory and a manufacturing method thereof. The method comprises the following steps: forming a bottom
electrode of a storage array region and a first top contact of a logic region on an upper surface of a bottom circuit layer at the same time; forming a patterned medium layer on an upper surface of a to-be-processed
storage cell layer of the storage array region and the logic region; simultaneously forming a
hard mask layer and a second top contact in a through hole of the patterned medium layer; the
hard mask layer corresponds to the bottom
electrode, and the second top contact is in contact connection with the first top contact;
etching the to-be-processed
storage cell layer to form a
storage cell layer, and obtaining the memory. The first top contact of the logic region is formed at the same time when the bottom
electrode of the storage array region is formed, and the second top contact of the logic region is formed at the same time when the
hard mask layer of the storage array region is formed, that is, the top contact of the logic region is manufactured twice, and each manufacturing is completed at the same time as the structure in the storage array region, so that the manufacturing process of the memory is simplified, the use of a
mask is reduced, and the cost is lowered.