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Low-voltage organic thin film transistor and fabrication method thereof

A technology of gate dielectric layer and organic thin film, applied in the field of OTFT, which can solve the problems of unfavorable metal peeling and lack of usability

Inactive Publication Date: 2007-08-15
梁在宇
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, this method lacks usability due to the fact that plating is a wet process, which can often lead to unfavorable metal stripping

Method used

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  • Low-voltage organic thin film transistor and fabrication method thereof
  • Low-voltage organic thin film transistor and fabrication method thereof
  • Low-voltage organic thin film transistor and fabrication method thereof

Examples

Experimental program
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Effect test

experiment example 1

[0034] Experimental Example 1: Electrical Characteristics of Aluminum Oxide

[0035] To determine the electrical properties of the alumina shown in Figure 5, I-V (current-voltage) and C-V (capacitance-voltage) measurements were performed using appropriate instruments, HP4155A and HP4280A, respectively. Figures 6 to 8 obtained from these experiments show the I-V characteristic curve, fault voltage curve, and capacitance curve of the aluminum oxide layer, respectively.

[0036] Figure 6 plots Al / Al 2 o 3 / Al structure and Al / Al 2 o 3 / I-V curves in the Au structure. The results in Figure 6 show different leakage current densities in the two structures. For example, the Al / Al 2 o 3 / Al structure exhibits a relatively high current density of 5.87×10 at 1V -7 A / cm 2 , otherwise the Al / Al 2 o 3 / Au structure has a relatively low current density of 2.4×10 at 1V -7 A / cm 2 . This may be due to the difference in work function between aluminum and gold.

[0037] As shown i...

experiment example 2

[0039] Experimental example 2: Electrical characteristics of pentacene OTFT

[0040] Figure 9A and Figure 9B show the I of the pentacene OTFT with aluminum oxide layer shown in Figure 5 DS -V GS , I DS -V DS characteristic curve. Its electrical characteristics are shown in Table 1 below.

[0041] Table I

[0042] mobility

(cm 2 / V·sec)

ON / OFF current rate

(I on / I off )

Threshold voltage (V)

subcritical slope

(V / dec)

power off state

Flow (pA / μm)

0.1

6.3×10 3

-1.13

0.206

0.25

[0043] As shown in Table 1, the OTFT has a 0.1cm 2 / V·sec Mobility, 6.3×10 3 The on / off current rate (I on / I off ), -1.13V critical voltage (V t ), a critical slope of 0.206V / dec, and an on-state current of 0.25pA / μm. Furthermore, at V GS =-2V, the drain / source soak voltage (V DS，sat ) was measured as -0.7V, and thus confirms the low voltage operation of the OTFT.

[0044] As fully discussed above, the inventive l...

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Abstract

The present invention provides a low-voltage organic thin film transistor having a gate dielectric layer of ultra-thin metal oxide self-grown on a metal gate electrode by O2 plasma process. The metal gate electrode is deposited on a plastic or glass substrate. By directly oxidizing the gate electrode by using O2 plasma process, the gate dielectric layer of metal oxide is formed with a thickness of several nanometers on the gate electrode. The organic semiconductor layer is deposited on the gate dielectric layer, and source / drain electrodes are formed on the organic semiconductor layer. Before the organic semiconductor layer is formed, an organic molecular monolayer may be formed on the gate dielectric layer by using molecular self-assembly technique. The gate dielectric layer may be formed at room temperature to about 100 DEG C.

Description

technical field [0001] The present invention relates to a kind of organic thin film transistor (OTFT) technology, relate in particular to a kind of low-voltage OTFT, is based on O 2 An OTFT in which an ultra-thin metal oxide gate dielectric layer is self-formed directly on the metal gate electrode by plasma process oxidation of the metal gate electrode. Background technique [0002] Recently, organic semiconductors such as "pentacene" have been extensively studied. Organic semiconductors are readily formed from various synthetic methods and in the form of fibers or films. Organic semiconductors have good elasticity, good electrical conductivity, and relatively low production costs. Due to these favorable conditions, organic semiconductors are being studied as new electronic materials in a wide range of fields, including electronic devices and optical devices. Compared with conventional silicon TFTs using amorphous silicon, this OTFT is an organic semiconductor used in the...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/05H01L51/40H10N10/856
CPCH01L51/0525H01L51/105H01L51/0094H10K85/40H10K10/472H10K10/84
Inventor 宋政根金强大柳基成许泳宪金光贤李明源
Owner 梁在宇
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