Integrated polarization converter based on silicon-based L-shaped waveguide structure

A polarization converter and waveguide structure technology, applied in the field of integrated optics, can solve problems such as large manufacturing tolerances, and achieve the effects of compact structure, simple structure, and convenient manufacturing

Inactive Publication Date: 2014-02-05
SOUTHEAST UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] Technical problem: In order to overcome the shortcomings of existing polarization rotators, the present invention provides an integrated polarization converter based on a silicon-based L-shaped waveguide structure, which has the advantages of easy implementation, high conversion efficiency, compact structure, small loss, and large manufacturing tolerance. advantage

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  • Integrated polarization converter based on silicon-based L-shaped waveguide structure
  • Integrated polarization converter based on silicon-based L-shaped waveguide structure
  • Integrated polarization converter based on silicon-based L-shaped waveguide structure

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Embodiment Construction

[0024] The technical solution of the present invention will be specifically described below in conjunction with the accompanying drawings. The examples given are only for explaining the present invention, not for limiting the scope of the present invention.

[0025] Such as figure 1 , figure 2 and image 3 As shown, an integrated polarization converter based on a silicon-based L-shaped waveguide structure of the present invention includes an input waveguide 1 for inputting an optical signal, an output waveguide 2 for outputting an optical signal, and a silicon-based waveguide for polarization rotation The L-shaped waveguide 3, the input waveguide 1 and the output waveguide 2 are directly coupled with the silicon-based L-shaped waveguide 3 respectively, and a transverse slit 41 is provided on the longitudinal arm 31 of the silicon-based L-shaped waveguide 3, and the silicon-based L-shaped waveguide 3 The transverse arm 32 is provided with a longitudinal slit 42 .

[0026] ...

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Abstract

The invention discloses an integrated polarization converter based on a silicon-based L-shaped waveguide structure. The integrated polarization converter comprises an input waveguide used for inputting optical signals, an output waveguide used for outputting optical signals, a silicon-based L-shaped waveguide used for polarization rotation and a wrapping layer. The input waveguide and the output waveguide are respectively in direct end face coupling with the silicon-based L-shaped waveguide, a transverse slot is formed in a longitudinal arm of the silicon-based L-shaped waveguide, a longitudinal slot is formed in a transverse arm of the silicon-based L-shaped waveguide, and the wrapping layer wasps the outer side of the input waveguide, the outer side of the output waveguide and the outer side of the silicon-based L-shaped waveguide. The integrated polarization converter has the advantages of being easy to implement, high in converting efficiency, compact in structure, little in loss, large in fabrication tolerance and the like.

Description

technical field [0001] The invention belongs to the technical field of integrated optics, and in particular relates to an integrated polarization converter based on a silicon-based L-shaped waveguide structure. Background technique [0002] With the increasing demand for information exchange, optical communication systems require larger and larger transmission capacity and faster processing speed, and the requirements for the integration of circuits and optical circuits are also getting higher and higher. Therefore, large-scale photonic integrated circuits (PICs) are the direction of future development. Recently, PICs based on silicon-on-insulator (SOI) platforms have begun to gain widespread attention and applications. This is firstly due to the ultra-high refractive index difference between silicon dioxide and silicon, which can well confine the optical field in the core layer, thus enabling the realization of submicron-sized device cross-sections and small-radius wavegui...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02B6/126
Inventor 肖金标王嘉源
Owner SOUTHEAST UNIV
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