4H-SiC metal-semiconductor field effect transistor with double-sunken buffer layer

A field-effect transistor and metal-semiconductor technology, which is applied in the field of 4H-SiC metal-semiconductor field-effect transistors, can solve the problems that the saturation leakage current has not been substantially improved, the drain current is reduced, and the saturation current is degraded, so as to avoid the breakdown voltage Effects of sharp drop, increase in saturation leakage current, and increase in drain current
CN104681618AActive Publication Date: 2015-06-03XIDIAN UNIV
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
XIDIAN UNIV
Publication Date
2015-06-03

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Abstract

The invention discloses a 4H-SiC metal-semiconductor field effect transistor with a double-sunken buffer layer. The 4H-SiC metal-semiconductor field effect transistor comprises a 4H-SiC semi-insulating substrate, a P type buffer layer and an N type channel layer from bottom to top, wherein a source electrode cap layer and a drain electrode cap layer are respectively arranged on two sides of the N type channel layer; a source electrode and a drain electrode are respectively arranged on the surfaces of the source electrode cap layer and the drain electrode cap layer; a gate electrode is formed on one side, close to the source electrode cap layer, above a channel; grooves are arranged on the upper end face of the P type buffer layer and under a gate source and a gate leakage. The 4H-SiC metal-semiconductor field effect transistor has the advantages that the output drain electrode current is obviously improved, and the breakdown voltage is stable.
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Description

technical field

[0001] The invention relates to the technical field of field effect transistors, in particular to a 4H-SiC metal semiconductor field effect transistor with double recessed buffer layers. Background technique

[0002] SiC materials have outstanding material and electrical properties such as wide band gap, high breakdown electric field, high saturation electron migration velocity, and high thermal conductivity, making them suitable for high-frequency and high-power device applications, especially high temperature, high voltage, aerospace, satellite, etc. It has great potential in high-frequency high-power device applications in harsh environments. In SiC allomorphs, the electron mobility of 4H-SiC with hexagonal close-packed wurtzite structure is nearly three times that of 6H-SiC, so 4H-SiC materials are used in high-frequency and high-power devices, especially in metal-semiconductor fields. Effect transistor (MESFET) occupies a major position in the applicati...

Claims

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