Field effect transistor with gamma gate and recessed buffer layer and its preparation method
A technology of field effect transistors and buffer layers, which is applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of no substantial improvement of saturation leakage current, decrease of effective carrier mobility, and reduction of drain current, etc., to achieve The effects of increased breakdown voltage, increased saturation leakage current, and reduced gate-to-drain capacitance
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0039] A field effect transistor with a Γ gate and a recessed buffer layer having a groove 11 with a height and a length of 0.05 μm and 0.35 μm was prepared. Follow the steps below:
[0040]Step 1) cleaning the 4H-SiC semi-insulating substrate 1 to remove dirt on the surface of the substrate;
[0041] a. Carefully clean the substrate two or three times with a cotton ball dipped in methanol to remove SiC particles of various sizes on the surface;
[0042] b. Place 4H-SiC semi-insulating substrate 1 in H 2 SO 4 :HNO 3 = Ultrasound for 5 minutes in 1:1;
[0043] c. Put the 4H-SiC semi-insulating substrate 1 in 1# cleaning solution (NaOH:H 2 o 2 :H 2 O=1:2:5) and boiled for 5 minutes, then rinsed with deionized water for 5 minutes and then put into 2# cleaning solution (HCl:H 2 o 2 :H 2 O=1:2:7) and boiled for 5 minutes, finally rinsed with deionized water and blow-dried with N2 for later use.
[0044] Step 2) epitaxially grow a 0.5 μm thick SiC layer on the 4H-SiC semi...
Embodiment 2
[0081] Field effect transistors with a Γ gate and a recessed buffer layer were fabricated with groove heights and lengths of 0.05 μm and 0.3 μm. The difference between this embodiment and Embodiment 1 lies in step 8)
[0082] a. Positive photoresist is used, the coating speed is 3000R / min, and the thickness of the glue is >2μm to ensure that it can play a good blocking role in the subsequent isolation injection;
[0083] b. After the gluing is completed, pre-bake in an oven at 90°C for 90 seconds, use a sunken buffer layer photolithography plate for about 35 seconds of ultraviolet exposure, and then develop in a special developer for 60 seconds. The formula of the special developer: tetramethylammonium hydroxide: Water = 1:3, then post-bake in an oven at 100°C for 3 minutes;
[0084] c. Carry out boron ion implantation, the implantation condition is 300keV / 2×10 12 cm -2 , the temperature is 400°C. After the injection is completed, use acetone and ultrasonic to remove the g...
Embodiment 3
[0087] A field effect transistor with a Γ gate and a recessed buffer layer with a groove height and length of 0.05 μm and 0.4 μm was prepared. The difference between this embodiment and Embodiment 1 lies in step 8).
[0088] a. Positive photoresist is used, the coating speed is 3000R / min, and the thickness of the glue is >2μm to ensure that it can play a good blocking role in the subsequent isolation injection;
[0089] b. After the gluing is completed, pre-bake in an oven at 90°C for 90 seconds, use a sunken buffer layer photolithography plate for about 35 seconds of ultraviolet exposure, and then develop in a special developer for 60 seconds. The formula of the special developer: tetramethylammonium hydroxide: Water = 1:3, then post-bake in an oven at 100°C for 3 minutes;
[0090] c. Carry out boron ion implantation, the implantation condition is 300keV / 2×10 12 cm -2 , the temperature is 400°C. After the injection is completed, use acetone and ultrasonic to remove the gl...
PUM
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com