4H-SiC metal semiconductor field effect transistor having double high gates
A field-effect transistor and metal-semiconductor technology, which is applied in the field of 4H-SiC metal-semiconductor field-effect transistors, can solve the problems that the saturation leakage current has not been substantially improved, the effective mobility of carriers has decreased, and the saturation current has degraded, etc. Maximum output power density, increase in breakdown voltage, and the effect of increasing breakdown voltage
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Example Embodiment
[0018] The present invention will be further described below in conjunction with embodiments and with reference to the drawings.
[0019] See figure 1 .
[0020] A 4H-SiC metal semiconductor field-effect transistor with double high gates, which includes 4H-SiC semi-insulating substrate 1, P-type buffer layer 2, N-type channel layer 3, and N-type channel layer 3 from bottom to top. On both sides are the source cap layer 4 and the drain cap layer 5, the surface of the source cap layer 4 and the drain cap layer 5 are the source electrode 6 and the drain electrode 7, respectively, above the N-type channel layer 3 and close to the source cap A gate electrode 10 is formed on one side of the layer. The gate electrode 10 forms a left channel recessed region 8, a right channel recessed region 9, and a middle channel recessed region 11 on the left, right, and middle of the N-type channel 3, respectively. A left high gate region 13 and a right high gate region 12 are formed between the chan...
PUM
Property | Measurement | Unit |
---|---|---|
Depth | aaaaa | aaaaa |
Depth | aaaaa | aaaaa |
Width | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap